VND600

VND600SP STMICROELECTRONICS | Alldatasheet

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Technical content

® VND600SP DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY ■ DC SHORT CIRCUIT CURRENT: 25 A ■ CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE AND OVERVOLTAGE /c110 SHUT-DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT DOWN ■ CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ PROTECTION AGAINST: /c110 LOSS OF GROUND AND LOSS OF V CC ■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VND600SP is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shut-down and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection. TYPE R DS(on) Ilim VCC VND600SP 30m Ω 25A 36 V PowerSO-10 ™ BLOCK DIAGRAM LOGIC UNDERVOLTAGE OVERVOLTAGE OVERTEMP. 1 OVERTEMP . 2 ILIM2 PwCLAMP 2 K IOUT2 ILIM1 PwCLAMP 1 K IOUT1 INPUT 1 INPUT 2 GND VCC OUTPUT 1 CURRENT SENSE 1 OUTPUT 2 CURRENT SENSE 2 DRIVER 2 DRIVER 1 VCC CLAMP Ot1 Ot2 Ot1 Ot2 Vdslim1 Vdslim2 (*) See application schematic at page 8 ORDER CODES PACKAGE TUBE T&R PowerSO-10 ™ VND600SP VND600SP13TR Rev. 2

CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C. PINS CURRENT AND VOLTAGE CONVENTIONS Symbol Parameter Value Unit VCC DC supply voltage 41 V -VCC Reverse supply voltage -0.3 V - IGND DC reverse ground pin current -200 mA IOUT Output current Internally limited A IR Reverse output current -21 A IIN Input current +/- 10 mA VCSENSE Current sense maximum voltage -3 +15 V V VESD Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - CURRENT SENSE - OUTPUT - V CC 4000 2000 5000 5000 V V V V E MAX Maximum Switching Energy (L=0.13mH; RL=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=40A) 145 mJ Ptot Power dissipation at Tc=25°C 96.1 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C IS IGND OUTPUT2 VCC IOUT2 VCC VSENSE2 CURRENT SENSE 1 ISENSE1 VOUT2 OUTPUT1 IOUT1 CURRENT SENSE 2 ISENSE2 VSENSE1 VOUT1 INPUT2 IIN2 INPUT1 IIN1 VIN2 VIN1

11 OUTPUT 2

N.C. OUTPUT 1 OUTPUT 1 GROUND INPUT 2 INPUT 1 C.SENSE1 C.SENSE2 VCC GROUND VF1 (*) (*) VFn = VCCn - VOUTn during reverse battery condition Connection / Pin Current Sense N.C. Output Input Floating X X X To Ground Through 1KΩ resistor X Through 10KΩ resistor

(1) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). (2) When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35µm thick). ELECTRICAL CHARACTERISTICS (8V<VCC <36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER () Per device. PROTECTIONS (see note 1) Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. VCC - OUTPUT DIODE Symbol Parameter Value Unit R thj-case Thermal resistance junction-case (MAX) 1.3 °C/W R thj-amb Thermal resistance junction-ambient (MAX) 51.3 (1) 37 (2) °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCC () Operating supply voltage 5.5 13 36 V VUSD () Undervoltage shutdown 3 4 5.5 V VOV () Overvoltage shutdown 36 V R ON On state resistance IOUT =5A; Tj=25°C IOUT =5A; Tj=150°C IOUT =3A; VCC =6V 100 m Ω m Ω m Ω Vclamp Clamp Voltage I CC =20mA (see note 1) 41 48 55 V IS (**) Supply current Off State; VCC =13V; VIN=VOUT =0V Off State; VCC =13V; VIN=VOUT =0V; Tj=25°C On state; VIN=5V; VCC =13V; IOUT =0A; R SENSE =3.9kΩ µA µA mA IL(off1) Off State Output Current VIN=V OUT =0V 0 50 µA IL(off2) Off State Output Current VIN=0V; VOUT =3.5V -75 0 µA IL(off3) Off State Output Current VIN=V OUT =0V; VCC =13V; Tj =125°C 5 µA IL(off4) Off State Output Current VIN=V OUT =0V; VCC =13V; Tj =25°C 3 µA Symbol Parameter Test Conditions Min Typ Max Unit Ilim DC short circuit currentVCC =13V 5.5V<VCC <36V 25 40 70 A A TTSD Thermal shut-down temperature 150 175 200 °C TR Thermal reset temperature 135 °C THYST Thermal hysteresis 7 15 °C Vdemag Turn-off output voltage clamp IOUT =2A; VIN=0V; L=6mH VCC -41 VCC -48 VCC -55 V VON Output voltage drop limitation IOUT =0.5A Tj= -40°C...+150°C 50 mV Symbol Parameter Test Conditions Min Typ Max Unit VF Forward on Voltage -I OUT =2.6A; Tj=150°C 0.6 V

ELECTRICAL CHARACTERISTICS (continued) CURRENT SENSE (9V ≤VCC ≤16V) (See figure 1) LOGIC INPUT (Channels 1,2) SWITCHING (V CC =13V) Note 1: Vclamp and VOV are correlated. Typical difference is 5V. Note 2: current sense signal delay after positive input slope. Symbol Parameter Test Conditions Min Typ Max Unit K1 IOUT /ISENSE IOUT1 or IOUT2 =0.5A; VSENSE =0.5V; other channels open; Tj= -40°C...150°C 3300 4400 6000 dK1/K1 Current Sense Ratio DriftIOUT1 or IOUT2 =0.5A; VSENSE =0.5V; other channels open; Tj= -40°C...150°C -10 +10 % K2 IOUT /ISENSE IOUT1 or IOUT2 =5A; VSENSE =4V; other channels open; Tj=-40°C Tj=25°C...150°C 4200 4400 4900 4900 6000 5750 dK2/K2 Current Sense Ratio DriftIOUT1 or IOUT2 =5A; VSENSE =4V; other channels open; Tj=-40°C...150°C -6 +6 % K3 IOUT /ISENSE IOUT1 or IOUT2 =15A; VSENSE =4V; other channels open; Tj=-40°C Tj=25°C...150°C 4200 4400 4900 4900 5500 5250 dK3/K3 Current Sense Ratio DriftIOUT1 or IOUT2 =15A; VSENSE =4V; other channels open; Tj=-40°C...150°C -6 +6 % VSENSE1,2 Max analog sense output voltage VCC =5.5V; IOUT1,2 =2.5A; RSENSE =10kΩ VCC >8V, IOUT1,2 =5A; RSENSE =10kΩ V V VSENSEH Analog sense output voltage in overtemperature condition V CC =13V; RSENSE =3.9kΩ 5.5 V R VSENSEH Analog Sense Output Impedance in Overtemperature Condition V CC =13V; Tj>TTSD ; All channels open 400 Ω tDSENSE Current sense delay response to 90% ISENSE (see note 2) 500 µs Symbol Parameter Test Conditions Min Typ Max Unit VIL Input low level voltage 1.25 V IIL Low level input current VIN=1.25V 1 µA VIH Input high level voltage 3.25 V IIH High level input current VIN=3.25V 10 µA VI(hyst) Input hysteresis voltage 0.5 V VICL Input clamp voltage IIN=1mA IIN=-1mA 6 6.8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on delay time R L=2.6Ω (see figure 1) 30 µs td(off) Turn-on delay time R L=2.6Ω (see figure 1) 30 µs (dVOUT /dt)on Turn-on voltage slope R L=2.6Ω (see figure 1) See relative diagram V/µs (dVOUT /dt)off Turn-off voltage slope RL=2.6Ω (see figure 1) See relative diagram V/µs

TRUTH TABLE (per channel) CONDITIONS INPUT OUTPUT SENSE Normal operation L H L H Nominal Overtemperature L H L L VSENSEH Undervoltage L H L L Overvoltage L H L L Short circuit to GND L H H L L L (Tj<TTSD ) 0 (Tj>TTSD ) VSENSEH Short circuit to VCC L H H H < Nominal Negative output voltage clamp LL 0

ELECTRICAL TRANSIENT REQUIREMENTS Figure 1: Switching Characteristics (Resistive load RL=2.6Ω ) ISO T/R 7637/1 Test Pulse TEST LEVELS I II III IV Delays and Impedance 1 -25 V -50 V -75 V -100 V 2 ms 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω ISO T/R 7637/1 Test Pulse TEST LEVELS RESULTS I II III IV

1 CCCC

2 CCCC

4 CCCC

5 CEEE

C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. VOUT dVOUT /dt(on) tr 80% 10% tf dVOUT /dt(off) ISENSE t t 90% td(off) INPUT t 90% td(on) tDSENSE

Figure 2: Waveforms LOAD CURRENT n LOAD CURRENT n LOAD CURRENT n OVERTEMPERATURE INPUT n SENSE n TTSD TR Tj LOAD CURRENT n VOV VCC > VOVVCC < VOV SHORT TO GROUND INPUT n LOAD CURRENT n SENSE n LOAD VOLTAGE n INPUT n LOAD VOLTAGE n SENSE n LOAD CURRENT n <Nominal <Nominal SHORT TO V CC ISENSE = RSENSE VSENSEH

GND PROTECTION NETWORK AGAINST REVERSE BATTERY Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the R GND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC ) / (-IGND ) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC <0: during reverse battery situations) is: PD = (-VCC )2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND ) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND . If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND ) in the ground line. A resistor (RGND =1kΩ) should be inserted in parallel to D GND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (/c106 600mV) in the input thresholds and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected. LOAD DUMP PROTECTION D ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. VCC GND OUTPUT2 CURRENT SENSE1 Dld +5V Rprot RSENSE2 OUTPUT1 RSENSE1 INPUT1 DGND RGNDVGND CURRENT SENSE2 INPUT2 µC Rprot Rprot Rprot APPLICATION SCHEMATIC

µC I/Os PROTECTION: If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak /Ilatchup ≤ Rprot ≤ (VOH µC -VIH-VGND ) / IIHmax Calculation example: For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOH µC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ . Recommended R prot value is 10kΩ. 02468 1 0 1 2 1 4 1 6 3000 3500 4000 4500 5000 5500 6000 6500 min.Tj=-40°C max.Tj=-40°C min.Tj=25...150°C max.Tj=25...150°C typical value Figure 3: IOUT /ISENSE versus IOUT IOUT /ISENSE IOUT (A)

-50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Iih (uA) Vin=3.25V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vicl (V) Iin=1mA Input High Level -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 2.2 2.4 2.6 2.8 3.2 3.4 3.6 Vih (V) Input Hysteresis VoltageInput Low Level -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Vil (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 Vhyst (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 IL(off1) (uA) Off state Vcc=36V Vin=Vout=0V

Turn-on Voltage Slope Turn-off Voltage Slope ILIM Vs Tcase -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Vov (V) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 250 300 350 400 450 500 550 600 650 700 750 dVout/dt(on) (V/ms) Vcc=13V Rl=2.6Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 150 200 250 300 350 400 450 500 dVout/dt(off) (V/ms) Vcc=13V Rl=2.6Ohm On State Resistance Vs Tcase On State Resistance Vs VCC -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Ilim (A) Vcc=13V -75 -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 100 Ron (mOhm) Iout=5A Vcc=8V & 36V 5 1 01 52 02 53 03 54 0 Vcc (V) Ron (mOhm) Iout=5A Tc= 150°C Tc= 25°C Tc= - 40°C

Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 100 0.01 0.1 1 10 100 L(mH) ILMAX (A) A B C

PowerSO-10 ™ PC Board R thj-amb Vs PCB copper area in open box free air condition PowerSO-10 ™ THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2). 02468 1 0 PCB Cu heatsink area (cm^2) RTHj_amb (°C/W) Tj-Tamb=50°C

Thermal fitting model of a double channel HSD in PowerSO-10 Pulse calculation formula Thermal Parameter Area/island (cm2) Footprint 6 R1 (°C/W) 0.05 R2 (°C/W) 0.3 R3( °C/W) 0.3 R4 (°C/W) 0.8 R5 (°C/W) 12 R6 (°C/W) 37 22 C1 (W.s/°C) 0.001 C2 (W.s/°C) 5.00E-03 C3 (W.s/°C) 0.02 C4 (W.s/°C) 0.3 C5 (W.s/°C) 0.75 C6 (W.s/°C) 3 5 ZTH δ R TH δ ZTHtp 1 δ–()+⋅= where δ tp T⁄= PowerSO-10 Thermal Impedance Junction Ambient Single Pulse 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) ZTH (°C/W) Footprint 6 cm2 T_amb Pd1 C3 C4 R3R1 R6R5R2 C5 C6C2 Pd2 C1 C2 Tj_1 Tj_2

DIM. mm. inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 C 0.35 0.55 0.013 0.022 C (*) 0.23 0.32 0.009 0.0126 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E2 7.20 7.60 0.283 300 E2 (*) 7.30 7.50 0.287 0.295 E4 5.90 6.10 0.232 0.240 E4 (*) 5.90 6.30 0.232 0.248 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 H (*) 13.85 14.35 0.545 0.565 h 0.50 0.002 L 1.20 1.80 0.047 0.070 α 0º 8º 0º 8º α (*) 2º 8º 2º 8º PowerSO-10 ™ MECHANICAL DATA (*) Muar only POA P013P DETAIL "A" PLANE SEATING α L F h A D D1= = = = 0.10 A C A B B DETAIL "A" SEATING PLANE eB HE 0.25 P095A

PowerSO-10 ™ SUGGESTED PAD LAYOUT TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS All dimensions are in mm. Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 All dimensions are in mm. Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 24 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed 6.30 10.8 - 11 14.6 - 14.9 9.5 1.27 0.67 - 0.73 0.54 - 0.610 B A C All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) Casablanca 50 1000 532 10.4 16.4 0.8 Muar 50 1000 532 4.9 17.2 0.8 TUBE SHIPMENT (no suffix) CA B MUARCASABLANCA

REVISION HISTORY

Date Revision Description of Changes Jul. 2004 1 - Current and voltage convention update (page 2). - “Configuration diagram (top view) & suggested connections for unused and n.c. pins” insertion (page 2). - 6 cm2 Cu condition insertion in Thermal Data table (page 3). - VCC - OUTPUT DIODE section update (page 3). - Revision History table insertion (page 17). - Disclaimers update (page 18). July 2004 2 - Suggested connections for unused and n.c.pins” correction (page 2).

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