VND3NV04 | DigiCamel IC Datasheet

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VNN3NV04 STMICROELECTRONICS | Alldatasheet

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/ VND3NV04 / VND3NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET /c110 LINEAR CURRENT LIMITATION /c110 THERMAL SHUT DOWN /c110 SHORT CIRCUIT PROTECTION /c110 INTEGRATED CLAMP /c110 LOW CURRENT DRAWN FROM INPUT PIN /c110 DIAGNOSTIC FEEDBACK THROUGH INPUT PIN /c110 ESD PROTECTION /c110 DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) /c110 COMPATIBLE WITH STANDARD POWER MOSFET

DESCRIPTION

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. TYPE R DS(on) Ilim Vclamp VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 120 mΩ 3.5 A 40 V SOT-223 SO-8 TO251 (IPAK) 3 3 TO252 (DPAK) ORDER CODES: SOT-223 VNN3NV04 SO-8 VNS3NV04 TO-252 (DPAK) VND3NV04 TO-251 (IPAK) VND3NV04-1 BLOCK DIAGRAM Overvoltage Gate Linear DRAIN SOURCE Clamp Current Limiter Control Over T emperature INPUT FC01000

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ABSOLUTE MAXIMUM RATING CONNECTION DIAGRAM (TOP VIEW) Symbol Parameter Value UnitSOT-223 SO-8 DPAK/IPAK VDS Drain-source Voltage (VIN=0V) Internally Clamped V VIN Input Voltage Internally Clamped V IIN Input Current +/-20 mA R IN MIN Minimum Input Series Impedance 220 Ω ID Drain Current Internally Limited A IR Reverse DC Output Current -5.5 A VESD1 Electrostatic Discharge (R=1.5KΩ , C=100pF) 4000 V VESD2 Electrostatic Discharge on output pin only (R=330Ω , C=150pF) 16500 V Ptot Total Dissipation at Tc=25°C 7 8.3 35 W Tj Operating Junction Temperature Internally limited °C Tc Case Operating Temperature Internally limited °C Tstg Storage Temperature -55 to 150 °C DRAIN INPUT SOURCE ID IIN VIN VDS R IN CURRENT AND VOLTAGE CONVENTIONS (*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1. DRAIN DRAIN DRAIN DRAIN INPUT SOURCE SOURCE SOURCE 4 5

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 THERMAL DATA (*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins. ON Symbol Parameter Value UnitSOT-223 SO-8 DPAK IPAK R thj-case Thermal Resistance Junction-case}}} MAX 18 3.5 3.5 °C/W R thj-lead Thermal Resistance Junction-lead MAX 15 °C/W R thj-amb Thermal Resistance Junction-ambient MAX 70(*) 65(*) 54(*) 100 °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCLAMP Drain-source Clamp Voltage VIN=0V; ID =1.5A 40 45 55 V VCLTH Drain-source Clamp Threshold Voltage VIN=0V; ID =2mA 36 V VINTH Input Threshold Voltage VDS =V IN; ID =1mA 0.5 2.5 V IISS Supply Current from Input Pin VDS =0V; VIN=5V 100 150 µA VINCL Input-Source Clamp Voltage IIN=1mA IIN=-1mA -1.0 6.8 8 -0.3 V IDSS Zero Input Voltage Drain Current (VIN=0V) VDS =13V; VIN=0V; Tj=25°C VDS =25V; VIN=0V 75 µA Symbol Parameter Test Conditions Min Typ Max Unit R DS(on) Static Drain-source On Resistance VIN=5V; ID =1.5A; Tj=25°C VIN=5V; ID =1.5A 120 240 m Ω ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC SWITCHING SOURCE DRAIN DIODE PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% Symbol Parameter Test Conditions Min Typ Max Unit gfs (*) Forward Transconductance VDD =13V; ID =1.5A 5.0 S C OSS Output Capacitance V DS =13V; f=1MHz; VIN=0V 150 pF Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time VDD =15V; ID =1.5A Vgen=5V; Rgen=R IN MIN=220Ω (see figure 1) 90 300 ns tr Rise Time 250 750 ns td(off) Turn-off Delay Time 450 1350 ns tf Fall Time 250 750 ns td(on) Turn-on Delay Time VDD =15V; ID =1.5A Vgen=5V; Rgen=2.2 KΩ (see figure 1) 0.45 1.35 µs tr Rise Time 2.5 7.5 µs td(off) Turn-off Delay Time 3.3 10.0 µs tf Fall Time 2.0 6.0 µs (dI/dt)on Turn-on Current Slope VDD =15V; ID =1.5A Vgen=5V; Rgen=R IN MIN=220Ω 4.7 A/ µs Q i Total Input Charge VDD =12V; ID =1.5A; VIN=5V Igen=2.13mA (see figure 5) 8.5 nC Symbol Parameter Test Conditions Min Typ Max Unit VSD (*) Forward On Voltage I SD =1.5A; VIN=0V 0.8 V trr Reverse Recovery Time I SD =1.5A; dI/dt=12A/µs VDD =30V; L=200µH (see test circuit, figure 2) 107 ns Q rr Reverse Recovery Charge 37 µC IRRM Reverse Recovery Current 0.7 A Symbol Parameter Test Conditions Min Typ Max Unit Ilim Drain Current Limit V IN=5V; VDS =13V 3.5 5 7 A tdlim Step Response Current Limit VIN=5V; VDS =13V 10 µs Tjsh Overtemperature Shutdown 150 175 200 °C Tjrs Overtemperature Reset 135 °C Igf Fault Sink Current V IN=5V; VDS =13V; Tj=Tjsh 10 15 20 mA Eas Single Pulse Avalanche Energy starting Tj=25°C; VDD =24V VIN=5V Rgen=R IN MIN=220Ω; L=24mH (see figures 3 & 4) 100 mJ

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current I ISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current I D to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition j > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I ISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Fig.2: Test Circuit for Diode Recovery Times L=100uH A B 8.5 Ω VDDR gen FAST DIODEOMNIFET A D I S 220Ω B OMNIFET D S I Vgen Fig.1: Switching Time Test Circuit for Resistive Load R gen Vgen VD t ID 90% 10% t Vgen td(on) td(off) tftr

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Thermal Impedance for DPAK/IPAK Thermal Impedance for SOT-223

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 GEN ND8003 VIN Fig. 3: Unclamped Inductive Load Test Circuits Fig. 5: Input Charge Test Circuit Fig. 4: Unclamped Inductive Waveforms R GEN PW VIN

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Source-Drain Diode Forward Characteristics Derating Curve Static Drain Source On Resistance Static Drain-Source On resistance Vs. Input Voltage TransconductanceStatic Drain-Source On resistance Vs. Input Voltage Id (A) Gfs (S) Vds=13V Tj=25ºC Tj=150ºC Tj=-40ºC 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) 100 125 150 175 200 225 250 275 300 Rds(on) (mohms) Id=3.5A Id=1A Id=3.5A Id=1A Id=3.5A Id=1A Tj=25ºC Tj=150ºC Tj=-40ºC 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) 100 125 150 175 200 225 250 Rds(on) (mohms) Id=1.5A Tj=150ºC Tj=-40ºC Tj=25ºC 0123456789 1 0 1 1 1 2 Id (A) 600 650 700 750 800 850 900 950 1000 1050 1100 Vsd (mV) Vin=0V Id(A) 100 200 300 400 500 600 700 800 900 1000 Rds(on) (mohms) Tj=25ºC Tj=150ºC Tj=-40ºC Vin=2.5V

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Static Drain-Source On Resistance Vs. Id Turn On Current Slope Transfer Characteristics Turn On Current Slope Input Voltage Vs. Input Charge Turn off drain source voltage slope 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 0.5 1.5 2.5 3.5 4.5 di/dt(A/us) Vin=5V Vdd=15V Id=1.5A 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 0.25 0.5 0.75 1.25 1.5 1.75 di/dt(A/usec) Vin=3.5V Vdd=15V Id=1.5A 0123456789 1 0 1 1 Qg (nC) Vin (V) Vds=1V Id=1.5A 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 100 125 150 175 200 225 250 275 300 dv/dt(V/usec) Vin=5V Vdd=15V Id=1.5A Vin (V) 0.5 1.5 2.5 3.5 4.5 5.5 Idon (A) Vds=13.5V Tj=150ºC Tj=25ºC Tj=-40ºC 00 . 511 . 522 . 533 . 54 Id (A) 100 125 150 175 200 225 250 Rds(on) (mohms) Tj=25ºC Tj=150ºC Tj= - 40ºC Vin=5V

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Turn Off Drain-Source Voltage Slope Switching Time Resistive Load Output Characteristics Capacitance Variations Switching Time Resistive Load Normalized On Resistance Vs. Temperature 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 100 125 150 175 200 225 250 275 300 dv/dt(V/usec) Vin=3.5V Vdd=15V Id=1.5A 0 5 10 15 20 25 30 35 Vds(V) 100 150 200 250 300 350 C(pF) f=1MHz Vin=0V 0123456789 1 0 Vds (V) 0.5 1.5 2.5 3.5 4.5 Id (A) Vin=4V Vin=5V Vin=3V 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 0.5 1.5 2.5 3.5 t(usec) Vdd=15V Id=1.5A Vin=5V td(off) tr td(on) tf Vin(V) 100 200 300 400 500 600 700 800 900 t(nsec) Vdd=15V Id=1.5A Rg=220ohm tf tr td(off) td(on) -50 -25 0 25 50 75 100 125 150 175 Tc )ºC) 0.5 1.5 2.5 3.5 Rds(on) (mOhm) Vin=5V Id=1.5A

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Normalized Input Threshold Voltage Vs. Temperature Step Response Current Limit Normalized Current Limit Vs. Junction Temperature Vdd(V) 7.5 8.5 9.5 10.5 11.5 12.5 Tdlim(usec) Vin=5V Rg=220ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Vinth (V) Vds=Vin Id=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Ilim (A) Vin=5V Vds=13V

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DIM. mm. inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 TO-251 (IPAK) MECHANICAL DATA A C H D LL2 1 3 = = B E G = = = =

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DIM. mm. MIN. TYP MAX. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 B 0.64 0.90 B2 5.20 5.40 C 0.45 0.60 C2 0.48 0.60 D 6.00 6.20 D1 5.1 E 6.40 6.60 E1 4.7 e2 . 2 8 G 4.40 4.60 H 9.35 10.10 L2 0.8 L4 0.60 1.00 R0 . 2 V2 0° 8° Package Weight Gr. 0.29 TO-252 (DPAK) MECHANICAL DATA P032P

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DIM. mm. inch A 1.8 0.071 e2 . 3 0 . 0 9 e1 4.6 0.181 V1 0 ( m a x ) A1 0.02 0.1 0.0008 0.004 SOT-223 MECHANICAL DATA 0046067

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DIM. mm. inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 F 8 (max.) SO-8 MECHANICAL DATA

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 All dimensions are in mm. Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SO-8 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 100 Bulk Q.ty 2000 Tube length (± 0.5) 532 A 3.2 B 6 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS C B A

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix) A C B All dimensions are in mm. Base Q.ty 75 Bulk Q.ty 3000 Tube length (± 0.5) 532 A 6 B 21.3 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed 6.7 3.01.8 1.6 2. 3 2. 3 6. 7

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 IPAK TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 75 Bulk Q.ty 3000 Tube length (± 0.5) 532 A 6 B 21.3 C (± 0.1) 0.6 A C B

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

Product Information

VND3NV04 specifications and overview.

Summary

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET Feb-2003

Description

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Source title VND3NV04 Datasheet(PDF) - STMicroelectronics

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