VND10BSP

VND10BSP STMICROELECTRONICS | Alldatasheet

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ISO HIGH SIDE SMART POWER SOLID STATE RELAY March 1998 BLOCK DIAGRAM TYPE V DSS R DS(on )I OUT V CC VND10BSP 40 V 0.1 Ω 3.4 A 26 V ■ OUTPUT CURRENT (CONTINUOUS): 14A @ Tc = 85oC PER CHANNEL ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDER VOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION

DESCRIPTION

The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to V CC . PowerSO-10

Symbol Parameter Value Unit V (BR)DSS Drain-Source Breakdown Voltage 40 V IOUT Output Current (cont.) at Tc = 85 oC1 4 A IOUT (RMS) RMS Output Current at Tc = 85 oC and f > 1Hz 14 A IR Reverse Output Current at Tc = 85 oC- 1 4 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA V ESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc = 25 oC 75 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VND10BSP

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient ($) Max 1.65 oC/W oC/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 6 13 26 V In(*) Nominal Current T c = 85 oC VDS(on) ≤ 0.5 VCC = 13 V 3.4 5.2 A R on On State Resistance I OUT = In VCC = 13 V Tj = 25 oC 0.065 0.1 Ω IS Supply Current Off State T j = 25 oC VCC = 13 V 35 100 µ A V DS(MAX) Maximum Voltage Drop I OUT = 7.5 A Tj = 85 oC VCC = 13 V 1.2 2 V R i Output to GND internal Impedance Tj = 25 oC 5 10 20 K Ω SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on)(^) Turn-on Delay Time Of Output Current R out = 2.7 Ω 5 35 200 µ s tr(^) Rise Time Of Output Current R out = 2.7 Ω 28 110 360 µ s td(off)(^) Turn-off Delay Time Of Output Current R out = 2.7 Ω 10 140 500 µ s tf(^) Fall Time Of Output Current R out = 2.7 Ω 28 75 360 µ s (di/dt)on Turn-on Current Slope R out = 2.7 Ω 0.003 0.1 A/ µ s (di/dt)off Turn-off Current Slope Rout = 2.7 Ω 0.005 0.1 A/ µ s LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 1.5 V VIH Input High Level Voltage 3.5 ( •)V V I(hyst.) Input Hysteresis Voltage 0.2 0.9 1.5 V IIN Input Current V IN = 5 V Tj = 25 oC 30 100 µ A V ICL Input Clamp Voltage I IN = 10 mA IIN = -10 mA -0.7 V VND10BSP

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT Status Voltage Output Low ISTAT = 1.6 mA 0.4 V V USD Under Voltage Shut Down 3.5 4.5 6 V V SCL Status Clamp Voltage I STAT = 10 mA ISTAT = -10 mA -0.7 V TTSD Thermal Shut-down Temperature 140 160 180 oC TSD(hyst.) Thermal Shut-down Hysteresis 50 oC TR Reset Temperature 125 oC V OL Open Voltage Level Off-State (note 2) 2.5 4 5 V IOL Open Load Current Level On-State 0.6 0.9 1.4 A tpovl Status Delay (note 3) 5 10 µ s tpol Status Delay (note 3) 50 500 2500 µ s (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) NOTE = (^) See switching time waveform NOTE = (•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. NOTE = note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V NOTE = note 2: IOL(off) = (VCC -VOL )/ROL note 3:tpovl tpol: ISO definition. Note 2 Relevant Figure Note 3 Relevant Figure VND10BSP

The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to VCC . From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (V demag ) of -18V. This function allows to greatly reduces the power dissipation according to the formula: P dem = 0.5 • Lload •(Ιload)2 • [(VCC +Vdemag )/Vdemag ]

• f where f = switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC , Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with V CC not exceeding 16V, it will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -V f is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of V ih, Vil and V stat. This solution allows the use of a standard diode. Switching Time Waveforms VND10BSP

INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC Normal Operation L H L H L H H L L H L H L H H L H H H H Under-voltage X X L L H Thermal Shutdown Channel 1 HXLX L Channel 2 XHXL L Open Load Channel 1 H L X L H L X L L L() Channel 2 X L H L X L H L L L() Output Shorted to VCC Channel 1 H L X L H H X L L L Channel 2 X L H L X L H H L L (**) with additional external resistor. Figure 1: Waveforms VND10BSP

DIM. mm inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e1 . 2 7 0 . 0 5 0 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h0 . 5 0 0 . 0 0 2 L 1.20 1.80 0.047 0.071 q1 . 7 0 0 . 0 6 7 α 0 o 8o DETAIL "A" PLANE SEATING α L F h A D D1= = = = = = 0.10 A E1E3 C Q A = = B B DETAIL "A" SEATING PLANE = = = = 610 e B HE M0.25 = = = = 0068039-C Power SO-10 MECHANICAL DATA VND10BSP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microe lectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelec tronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . VND10BSP