OMNIFET II fully autoprotected Power MOSFET
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 24
Technical content
Datasheet sections
- 1 Block diagram and pin connection
- 2 Electrical specification
- 2.1 Absolute maximum ratings
- 2.2 Thermal data
- 2.3 Electrical characteristics
- 2.4 Protection features
- 2.5 Electrical characteristics curves
- 3 Package informantion
- 3.1 ECOPACK ®
- 3.2 PowerSO-10 mechanical data
- 3.3 D2PAK mechanical data
- 3.4 PowerSO-10 packing information
- 4 Revision history
Features
■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET
Description
The VNB35NV04 and VNV35NV04 are monolithic devices designed in STMicroelectronics VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Type R DS(on) Ilim Vclamp VNB35NV04 VNV35NV04 10 mΩ(1) 1. For PowerSO-10 only
30 A 40 V
Table 1. Device summary
1 Block diagram and pin connection
Figure 1. Block diagram Figure 2. Pin connection
- For the pins configuration related to D 2PAK, see Figure 1.
2 Electrical specification
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
conditions above those indicated in the operating sections of this specification is not implied. Table 2. Absolute maximum ratings
2.2 Thermal data
2.3 Electrical characteristics
-40°C < Tj < 150°C, unless otherwise specified. Table 3. Thermal data
- When mounted on a standard single-sided FR4 board with 50mm 2 of Cu (at least 35 mm thick) connected
Table 4. Off Table 5. Dynamic
- Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
Doc ID 023692 Rev. 2 9/24
2.4 Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 25 KHz. The only difference from the user’s standpoint is that a small DC current I ISS (typ. 100 µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates:
- Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- Linear current limiter circuit: limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh.
- Overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a typical value being 170°C. The device is automatically restarted when the chip temperature falls of about 15°C below shutdown temperature.
- Status feedback: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf, the INPUT pin falls to 0 V. This does not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I ISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. Obsolete Product(s) - Obsolete Product(s)
Figure 8. Input charge test circuit
2.5 Electrical characteristics curves
Figure 9. Source-drain diode forward Figure 10. Static drain source on Figure 11. PowerSO-10 static drain- Figure 12. D Figure 13. PowerSO-10 static drain- Figure 14. D 2PAK static drain-source on
3 Package informantion
3.1 ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
3.2 PowerSO-10 mechanical data
Table 9. PowerSO-10 mechanical data
- Resin protrusion not included (max value: 0.20 mm per side)
Figure 30. PowerSO-10 package dimensions
3.3 D 2PAK mechanical data
Table 10. D 2PAK mechanical data
Figure 31. D 2PAK package dimensions
3.4 PowerSO-10 packing information
Figure 34. Tape and reel shipment (suffix “13TR”) Figure 32. PowerSO-10 Figure 33. Tube shipment (no suffix)
3.5 D 2PAK packing information
Figure 37. Tape and reel shipment (suffix “13TR”) Figure 35. D 2PAK footprint Figure 36. Tube shipment (no suffix)
9.75 All dimensions
4 Revision history
Table 11. Document revision history 17-Sep-2013 2 Updated disclaimer.