VN88AFD

2N6661 VISHAY | Alldatasheet

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Document Number: 70224 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 N-Channel 80-V and 90-V (D-S) MOSFETS /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 3.6 /C0087 /C0068Low Threshold: 1.6 V /C0068Low Input Capacitance: 35 pF /C0068Fast Switching Speed: 6 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068Easily Driven Without Buffer /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays 2 3 TO-205AD (TO-39) Top View DG S TO-220SD (Tab-Drain) Front View SGD D G S N-Channel MOSFET 2N6661 VN88AFD Device Marking Front View VN88AFD “S” xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Side View 2N6661 “S” fllxxyy “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol 2N6661 VN88AFD Unit Drain-Source Voltage VDS 90 80 Gate-Source Voltage VGS /C003420 /C003430 V /C0095 TC = 25/C0095C 0.9 1.29 Continuous Drain Current (TJ = 150/C0095C) TC = 100/C0095C ID 0.7 0.81 A Pulsed Drain Currenta IDM /C00343 /C00343 TC = 25/C0095C 6.25 15 Power Dissipation TC = 100/C0095C PD 2.5 6 W Thermal Resistance, Junction-to-Ambientb R thJA 170 /C0095 Thermal Resistance, Junction-to-Case R thJC 8.3 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC.

www.vishay.com 11-2 Document Number: 70224 S-04279— Rev. C, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits 2N6661 VN88AFD Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 125 90 80 VDS = VGS , ID = 1 mA 1.6 0.8 2 0.8 2.5 Gate-Threshold Voltage VGS(th) TJ = –55/C0095C 1.8 V TJ = 125/C0095C 1.3 VDS = 0 V, VGS = /C003415 V /C0034100 /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 /C0034500 nA VDS = 90 V, VGS = 0 V 10 VDS = 80 V, VGS = 0 V 10 /C0109Zero Gate Voltage Drain Current IDSS VDS = 0.8 x V(BR)DSS , VGS = 0 V 1 /C0109A TJ = 125/C0095C 500 500 VDS = 15 V, VGS = 10 V 1.8 1.5 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1.8 1.5 A VGS = 5 V, ID = 0.3 A 3.8 5.3 5.6 Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 1 A 3.6 4 4 /C0087 TJ = 125/C0095C d 6.7 9 8 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 350 170 170 mS Diode Forward Voltage VSD IS = 0.86 A, VGS = 0 V 0.9 V Dynamic Input Capacitance C iss 35 50 50 Output Capacitance C oss VDS = 24 V, VGS = 0 V 15 40 40 Reverse Transfer Capacitance C rss VDS = 24 V, VGS = 0 V f = 1 MHz 2 10 10 pF Drain-Source Capacitance C ds 30 40 Switchingc Turn-On Time tON VDD = 25 V, RL = 23 /C0087 /C0094 6 10 15 Turn-Off Time tOFF ID /C0094 1 A, VGEN = 10 V R G = 25 /C0087 8 10 15 ns Notes a. For DESIGN AID ONLY, not subject to production testing. VNDQ09 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC.

Document Number: 70224 S-04279— Rev. C, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 1.0 0.8 0.6 0.4 0.2 6 V 5 V 4 V 3 V 2 V VGS = 10 V 0.5 0.4 0.3 02 1 0 0.2 0.1 46 8 125/C0095C VDS = 15 V 0 0.5 2.5 1.0 1.5 2.0 VGS = 10 V 100 2.8 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V VGS = 3 V 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = 10 V 0 4 8 12 16 20 ID = 0.1 A 0.5 A 1.0 A 25/C0095C ID – Drain Current (A) ID – Drain Current (mA) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

www.vishay.com 11-4 Document Number: 70224 S-04279— Rev. C, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0.1 10 K 1.0 0.01 0.1 1.0 100 10 1 K Duty Cycle = 0.5 0.2 0.1 Single Pulse Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) 1. Duty Cycle, D = 2. Per Unit Base = RthJC = 20/C0095C/W 3. TJM – TC = PDM ZthJC(t) Notes: PDM 125 100 01 0 5 0 20 30 40 C oss C iss C rss VGS = 0 V f = 1 MHz 0.01 0.5 0.1 1.0 1.5 2.0 25/C0095C –55/C0095C 125/C0095C VGS = 5 V TJ = 150/C0095C 15.0 12.5 10.0 0 100 500 7.5 5.0 200 300 400 2.5 ID = 1.0 A VDS = 45 V 72 V 0.1 1 2 100 VDD = 25 V R L = 23 /C0087 VGS = 0 to 10 V ID = 1.0 A td(on) td(off) tr tf 0.05 0.02 0.01 ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)