VN88AF ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor VN88AF
- FEATURES
- WithTO-220 packaging
- Lowswitching loss
- Ultralow gate charge
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- Switching applications
- AC-DCconverters
- LEDlighting
- Uninterruptiblepower supply
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 80 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 1.29 0.81 A IDM DrainCurrent-SinglePulsed 3 A PD TotalDissipation 15 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.59 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor VN88AF ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 80 V VGS(th) GateThresholdVoltage VDS=±30V;ID=1mA 0.8 2.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1A 4 Ω IGSS Gate-SourceLeakageCurrent VGS= ±15V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=80V;VGS=0V;Tj=25℃ VDS=64V;VGS=0V;Tj=125℃ 500 μA VSDF Diodeforwardvoltage ISD=0.86A,VGS =0V 0.9 V