VN820_04 STMICROELECTRONICS | Alldatasheet
Document overview
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Technical content
/ VN820SP / VN820-B5 / VN820PT HIGH SIDE DRIVER ■ CMOS COMPATIBLE INPUT ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ REVERSE BATTERY PROTECTION (*)
DESCRIPTION
The VN820, VN820SP, VN820-B5, VN820SO, VN820PT are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. The device detects open load condition both is on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. TYPE R DS(on) IOUT VCC VN820 VN820SP VN820-B5 VN820SO VN820PT 40 mΩ 9 A 36 V BLOCK DIAGRAM UNDERVOLTAGE OVERTEMPERATURE VCC GND INPUT OUTPUT OVERVOLTAGE CURRENT LIMITER LOGIC DRIVER Power CLAMP STATUS VCC CLAMP ON STATE OPENLOAD OFF STATE OPENLOAD AND OUTPUT SHORTED TO V CC DETECTION DETECTION DETECTION DETECTION DETECTION (*) See application schematic at page 9 PENTAWATT P2PAK PowerSO-10 ™ SO-16L PPAK ORDER CODES PACKAGE TUBE T&R PENTAWATT VN820 - PowerSO-10™ VN820SP VN820SP13TR P2PAK VN820-B5 VN820-B513TR SO-16L VN820SO VN820SO13TR PPAK VN820PT VN820PT13TR Rev. 1
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT ABSOLUTE MAXIMUM RATING CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C. PINS CURRENT AND VOLTAGE CONVENTIONS Symbol Parameter Value UnitPowerSO-10 ™ PENTAWATT P 2PAK SO-16L PPAK VCC DC Supply Voltage 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA IOUT DC Output Current Internally Limited A - IOUT Reverse DC Output Current - 9 A IIN DC Input Current +/- 10 mA ISTAT DC Status Current +/- 10 mA VESD Electrostatic Discharge (Human Body Model: R=1.5KΩ ; C=100pF) - INPUT - STATUS - OUTPUT - V CC 4000 4000 5000 5000 V V V V E MAX Maximum Switching Energy (L=4mH; RL=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=13A) 481 481 mJ EMAX Maximum Switching Energy (L=3.7mH; R L=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=13A) 438 mJ EMAX Maximum Switching Energy (L=4.48mH; R L=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=13A) 526 mJ Tj Junction Operating Temperature Internally Limited °C Tc Case Operating Temperature - 40 to 150 °C Tstg Storage Temperature - 55 to 150 °C PPAK / P2PAK / PENTAWATT OUTPUT OUTPUT N.C. OUTPUT OUTPUT GROUND INPUT STATUS N.C. N.C. VCC PowerSO-10 ™ VCC OUTPUT OUTPUT OUTPUT OUTPUT VCC OUTPUT OUTPUT VCC N.C. N.C. STATUS INPUT VCC GND N.C. 8 9 SO-16L Connection / Pin Status N.C. Output Input Floating X X X X To Ground X Through 10K Ω resistor INPUT IS IIN VIN VCCSTATUS ISTAT VSTAT GND VCC IOUT VOUTIGND OUTPUT VF
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT THERMAL DATA (1) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). (2) When mounted on FR4 printed circuit board with 0.5cm2 of Cu (at least 35µ thick) connected to all VCC pins. (3) When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick). (4) When mounted on FR4 printed circuit board with 6cm2 of Cu (at least 35µ thick) connected to all VCC pins. ELECTRICAL CHARACTERISTICS (8V<VCC <36V; -40°C<Tj<150°C unless otherwise specified) POWER SWITCHING (V CC =13V) Symbol Parameter Value UnitPowerSO-10 PENTAWATT P 2PAK SO-16L PPAK R thj-case Thermal Resistance Junction-case Max 1.9 1.9 1.9 - 1.9 °C/W R thj-lead Thermal Resistance Junction-lead Max - - - 15 - °C/W R thj-amb Thermal Resistance Junction-ambient Max 51.9 (1) 61.9 (1) 51.9 (1) 65 (2) 76.9 (1) °C/W R thj-amb Thermal Resistance Junction-ambient Max 37 (3) -3 7 (3) 48 (4) 45 (3) °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCC Operating Supply Voltage 5.5 13 36 V VUSD Undervoltage Shut-down 3 4 5.5 V VUSDhyst Undervoltage Shut-down hysteresis 0.5 V VOV Overvoltage Shut-down 36 V R ON On State Resistance IOUT =3A; Tj=25°C; VCC >8V IOUT =3A; VCC >8V m Ω m Ω IS Supply Current Off State; VCC =13V; VIN=VOUT =0V Off State; VCC =13V; VIN=VOUT =0V; Tj=25°C On State; VCC =13V; VIN=5V; IOUT =0A 3.5 µA µA mA IL(off1) Off State Output Current VIN=V OUT =0V 0 50 µA IL(off2) Off State Output Current VIN=0V; VOUT =3.5V -75 0 µA IL(off3) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj =125°C 5 µA IL(off4) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj =25°C 3 µA Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time R L=4.3Ω from VIN rising edge to VOUT =1.3V 30 µs td(off) Turn-off Delay Time R L=4.3Ω from VIN falling edge to VOUT =11.7V 30 µs dVOUT /dt(on) Turn-on Voltage Slope R L=4.3Ω from VOUT =1.3 to VOUT =10.4V See relative diagram V/µs dVOUT /dt(off)Turn-off Voltage Slope R L=4.3Ω from VOUT =11.7 to VOUT =1.3V See relative diagram V/µs
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT ELECTRICAL CHARACTERISTICS (continued) INPUT PIN VCC - OUTPUT DIODE STATUS PIN PROTECTIONS (see note 1) Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles OPENLOAD DETECTION Symbol Parameter Test Conditions Min Typ Max Unit VIL Input Low Level 1.25 V IIL Low Level Input Current VIN=1.25V 1 µA VIH Input High Level 3.25 V IIH High Level Input Current VIN=3.25V 10 µA VI(hyst) Input Hysteresis Voltage 0.5 V VICL Input Clamp Voltage IIN=1mA IIN=-1mA 6 6.8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit VF Forward on Voltage -I OUT =2A; Tj=150°C 0.6 V Symbol Parameter Test Conditions Min Typ Max Unit VSTAT Status Low Output Voltage ISTAT =1.6mA 0.5 V ILSTAT Status Leakage Current Normal Operation VSTAT =5V 10 µA C STAT Status Pin Input Capacitance Normal Operation VSTAT =5V 100 pF VSCL Status Clamp Voltage ISTAT =1mA ISTAT =-1mA 66 . 8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit TTSD Shut-down Temperature 150 175 200 °C TR Reset Temperature 135 °C Thyst Thermal Hysteresis 7 15 °C tSDL Status delay in overload condition Tj>TTSD 20 µs Ilim Current limitation 5.5V<VCC <36V 91 3 2 0 A A Vdemag Turn-off Output Clamp Voltage IOUT =3A; VIN=0V; L=6mH V CC -41 VCC -48 V CC -55 V Symbol Parameter Test Conditions Min Typ Max Unit IOL Openload ON State Detection Threshold VIN=5V 70 150 300 mA tDOL(on) Openload ON State Detection Delay IOUT =0A 200 µs VOL Openload OFF State Voltage Detection Threshold V IN=0V 1.5 2.5 3.5 V tDOL(off) Openload Detection Delay at Turn Off 1000 µs
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT OPEN LOAD STATUS TIMING (with external pull-up) SWITCHING TIME WAVEFORMS TRUTH TABLE OVERTEMP STATUS TIMING CONDITIONS INPUT OUTPUT STATUS Normal Operation L H L H H H Current Limitation L H H L X X H (Tj < TTSD ) H (Tj > TTSD ) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > VOL L H H H L H Output Current < IOL L H L H H L t t VOUT VIN 80% 10% dVOUT /dt(on) td(off) 90% dVOUT /dt(off) td(on) VIN VSTAT tDOL(off) IOUT < IOLVOUT > VOL tDOL(on) Tj > TTSD VIN VSTAT tSDL tSDL
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT OPEN LOAD DETECTION IN OFF STATE Off state open load detection requires an external pull-up resistor (RPU ) connected between OUTPUT pin and a positive supply voltage (VPU ) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid V OUT to be higher than VOlmin; this results in the following condition VOUT =(VPU /(RL+R PU ))RL<VOlmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax ; this results in the following condition RPU <(VPU– VOLmax )/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin , VOLmax and IL(off2) are available in the Electrical Characteristics section. VOL V batt. V PU R PU R L R DRIVER LOGIC INPUT STATUS VCC OUT GROUND IL(off2) Open Load detection in off state
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT ISO T/R 7637/1 Test Pulse TEST LEVELS I II III IV Delays and Impedance 1 -25 V -50 V -75 V -100 V 2 ms 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω ISO T/R 7637/1 Test Pulse TEST LEVELS RESULTS I II III IV 1C C C C 2C C C C 3 a CCCC 3 b CCCC 4C C C C 5C E E E ELECTRICAL TRANSIENT REQUIREMENTS ON V CC PIN CLASS CONTENTS C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT OPEN LOAD without external pull-up STATUS INPUT NORMAL OPERATION UNDERVOLTAGE VCC VUSD VUSDhyst INPUT OVERVOLTAGE VCC VCC >VOV STATUS INPUT STATUS STATUS INPUT STATUS INPUT OPEN LOAD with external pull-up undefined Figure 1: Waveforms LOAD VOLTAGE VCC <V OV LOAD VOLTAGE LOAD VOLTAGE LOAD VOLTAGE LOAD VOLTAGE OVERTEMPERATURE INPUT STATUS TTSD TR Tj LOAD CURRENT VOUT >VOL VOL
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT GND PROTECTION NETWORK AGAINST REVERSE BATTERY Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the R GND resistor. 1) RGND ≤ 600mV / (IS(on)max). 2) RGND ≥ (−VCC ) / (-IGND ) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC <0: during reverse battery situations) is: PD = (-VCC )2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND ) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND . If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND ) in the ground line. A resistor (RGND =1kΩ) should be inserted in parallel to D GND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (/c106 600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected. LOAD DUMP PROTECTION D ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak /Ilatchup ≤ Rprot ≤ (VOH µC -VIH-VGND ) / IIHmax Calculation example: For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOH µC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ . Recommended R prot value is 10kΩ. APPLICATION SCHEMATIC VCC GND OUTPUT DGND RGND Dld µC +5V Rprot VGND STATUS INPUT +5V Rprot
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT High Level Input Current Input Clamp Voltage Off State Output Current -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Iih (uA) Vin=3.25V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vicl (V) Iin=1mA Input High Level -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 2.2 2.4 2.6 2.8 3.2 3.4 3.6 Vih (V) Input Hysteresis VoltageInput Low Level -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Vil (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 Vhyst (V) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.5 1.5 2.5 3.5 4.5 IL(off1) (µA) Off state Vcc=36V Vin=Vout=0V
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Overvoltage Shutdown Turn-on Voltage Slope Turn-off Voltage Slope ILIM Vs Tcase -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Vov (V) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 200 300 400 500 600 700 800 900 1000 dVout/dt(on) (V/ms) Vcc=13V Rl=4.3Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 200 300 400 500 600 700 800 900 1000 dVout/dt(off) (V/ms) Vcc=13V Rl=4.3Ohm On State Resistance Vs Tcase On State Resistance Vs VCC -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 2.5 7.5 12.5 17.5 22.5 Ilim (A) Vcc=13V -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 Ron (mOhm) Iout=3A Vcc=8V; 13V; 36V 5 1 01 52 02 53 03 54 0 Vcc (V) 100 Ron (mOhm) Tc= - 40ºC Tc= 25ºC Tc= 150ºC
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Status Leakage Current Status Low Output Voltage Status Clamp Voltage -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.01 0.02 0.03 0.04 0.05 Ilstat (uA) Vstat=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vstat (V) Istat=1.6mA Open Load Off State Voltage Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Vol (V) Vin=0V Open Load On State Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 110 120 130 140 150 160 170 180 190 200 Iol (mA) Vcc=13V Vin=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vscl (V) Istat=1mA
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PowerSO-10, P2PAK, PENTAWATT Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 100 0.1 1 10 100 L(mH) ILMAX (A) A B C
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PPAK Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 100 0.1 1 10 100 L(mH) ILMAX (A) A B C
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT SO-16L Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 100 0.1 1 10 100 L(mH) ILMAX (A) A B C
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT SO-16L PC Board R thj-amb Vs PCB copper area in open box free air condition SO-16L THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.5cm2, 6cm2). 01234567 PCB Cu heatsink area (cm^2) RTH j-amb (°C/W)
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT P2PAK PC Board R thj-amb Vs PCB copper area in open box free air condition P2PAK THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.97cm2, 8cm2). 02468 1 0 PCB Cu heatsink area (cm^2) RTHj_amb (°C/W) Tj-Tamb=50°C
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PPAK PC Board R thj-amb Vs PCB copper area in open box free air condition PPAK THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.44cm2, 8cm2). 02468 1 0 PCB Cu heatsink area (cm^2) RTHj_amb (ºC/W)
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PowerSO-10 ™ PC Board R thj-amb Vs PCB copper area in open box free air condition PowerSO-10 ™ THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2). 02468 1 0 PCB Cu heatsink area (cm^2) RTHj_amb (°C/W) Tj-Tamb=50°C
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Thermal fitting model of a single channel HSD in PowerSO-10 Pulse calculation formula Thermal Parameter Area/island (cm2) 0.5 6 R1 (°C/W) 0.04 R2 (°C/W) 0.25 R3( °C/W) 0.25 R4 (°C/W) 0.8 R5 (°C/W) 12 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 7.00E-03 C3 (W.s/°C) 0.015 C4 (W.s/°C) 0.3 C5 (W.s/°C) 0.75 C6 (W.s/°C) 3 5 Z TH δ R TH δ Z THtp 1 δ–()+⋅= where δ tp T⁄= PowerSO-10 Thermal Impedance Junction Ambient Single Pulse 0.01 0.1 100 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) ZTH (°C/W) 0.5 cm2 6 cm2 T_amb R1 R2 Pd Tj
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Thermal fitting model of a single channel HSD in P2PAK Pulse calculation formula Thermal Parameter Area/island (cm2) 0.97 6 R1 (°C/W) 0.04 R2 (°C/W) 0.25 R3( °C/W) 0.3 R4 (°C/W) 4 R5 (°C/W) 9 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 0.007 C3 (W.s/°C) 0.015 C4 (W.s/°C) 0.4 C5 (W.s/°C) 2 C6 (W.s/°C) 3 5 Z TH δ R TH δ Z THtp 1 δ–()+⋅= where δ tp T⁄= P2PAK Thermal Impedance Junction Ambient Single Pulse T_amb R1 R2 Pd Tj 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Tim e (s) ZTH (°C/W) 0.97 cm2 6 cm2
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Thermal fitting model of a single channel HSD in PPAK Pulse calculation formula Thermal Parameter Area/island (cm2) 0.44 6 R1 (°C/W) 0.04 R2 (°C/W) 0.25 R3( °C/W) 0.3 R4 (°C/W) 2 R5 (°C/W) 15 R6 (°C/W) 61 24 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 0.007 C3 (W.s/°C) 0.02 C4 (W.s/°C) 0.3 C5 (W.s/°C) 0.45 C6 (W.s/°C) 0.8 5 Z TH δ R TH δ Z THtp 1 δ–()+⋅= where δ tp T⁄= PPAK Thermal Impedance Junction Ambient Single Pulse T_amb R1 R2 Pd Tj 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Tim e (s) ZT H (°C/W) 0.44 cm2 6 cm2
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Thermal fitting model of a single channel HSD in SO-16L Pulse calculation formula Thermal Parameter Area/island (cm2) 0.5 6 R1 (°C/W) 0.04 R2 (°C/W) 0.25 R3( °C/W) 2.2 R4 (°C/W) 12 R5 (°C/W) 15 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 7.00E-03 C3 (W.s/°C) 1.50E-02 C4 (W.s/°C) 0.14 C5 (W.s/°C) 1 C6 (W.s/°C) 3 5 Z TH δ R TH δ Z THtp 1 δ–()+⋅= where δ tp T⁄= SO-16L Thermal Impedance Junction Ambient Single Pulse T_amb R1 R2 Pd Tj 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) ZTH (°C/W) 0.5 cm2 6 cm2
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT 111 DIM. mm. inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 C 0.35 0.55 0.013 0.022 C (*) 0.23 0.32 0.009 0.0126 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E2 7.20 7.60 0.283 300 E2 (*) 7.30 7.50 0.287 0.295 E4 5.90 6.10 0.232 0.240 E4 (*) 5.90 6.30 0.232 0.248 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 H (*) 13.85 14.35 0.545 0.565 h 0.50 0.002 L 1.20 1.80 0.047 0.070 α 0º 8º 0º 8º α (*) 2º 8º 2º 8º PowerSO-10 ™ MECHANICAL DATA (*) Muar only POA P013P DETAIL "A" PLANE SEATING α L F h A D D1= = = = 0.10 A E C A B B DETAIL "A" SEATING PLANE eB HE 0.25 P095A
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT DIM. mm. inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 PENTAWATT (VERTICAL) MECHANICAL DATA
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT DIM. mm. MIN. TYP MAX. A 4.30 4.80 A1 2.40 2.80 A2 0.03 0.23 b 0.80 1.05 c 0.45 0.60 c2 1.17 1.37 D 8.95 9.35 D2 8.00 E 10.00 10.40 E1 8.50 e 3.20 3.60 e1 6.60 7.00 L 13.70 14.50 L2 1.25 1.40 L3 0.90 1.70 L5 1.55 2.40 R 0.40 V2 0º 8º Package Weight 1.40 Gr (typ) P010R P2PAK MECHANICAL DATA
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT DIM. mm. inch A 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.012 C 0.5 0.020 c1 45° (typ.) D 10.1 10.5 0.397 0.413 E 10.0 10.65 0.393 0.419 e 1.27 0.050 e3 8.89 0.350 F 7.4 7.6 0.291 0.300 L 0.5 1.27 0.020 0.050 M 0.75 0.029 S 8° (max.) SO-16L MECHANICAL DATA
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT DIM. MIN. TYP MAX. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 B 0.40 0.60 B2 5.20 5.40 C 0.45 0.60 C2 0.48 0.60 D1 5.1 D 6.00 6.20 E 6.40 6.60 E1 4.7 e 1.27 G 4.90 5.25 G1 2.38 2.70 H 9.35 10.10 L2 0.8 1.00 L4 0.60 1.00 R 0.2 V2 0º 8º Package Weight Gr. 0.3 PPAK MECHANICAL DATA P032T1
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PowerSO-10 ™ SUGGESTED PAD LAYOUT TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS All dimensions are in mm. Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 24 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed 6.30 10.8 - 11 14.6 - 14.9 9.5 1.27 0.67 - 0.73 0.54 - 0.610 B A C All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) Casablanca 50 1000 532 10.4 16.4 0.8 Muar 50 1000 532 4.9 17.2 0.8 TUBE SHIPMENT (no suffix) CA B MUARCASABLANCA
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PENTAWATT TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532 A 18 B 33.1 C (± 0.1) 1C B A
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT P2PAK TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532 A 18 B 33.1 C (± 0.1) 1 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 16 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS C B A
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT SO-16L TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed A C B REEL DIMENSIONS
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT PPAK TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 75 Bulk Q.ty 3000 Tube length (± 0.5) 532 A 6 B 21.3 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS A C B
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT
REVISION HISTORY
Date Revision Description of Changes Jul 2004 1 - Minor changes - Current and voltage convention update (page 2). - “Configuration diagram (top view) & suggested connections for unused and n.c. pins” insertion (page 2). - 6 cm 2 Cu condition insertion in Thermal Data table (page 3). - VCC - OUTPUT DIODE section update (page 4). - PROTECTIONS note insertion (page 3) - Revision History table insertion (page 34). - Disclaimers update (page 35).
VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners 2004 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com