VN772

VN772K STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 21

Technical content

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS (*) Total resistance of one side in bridge configuration (**) Typical current limitation value ■ SUITED AS LOW VOLTAGE BRIDGE ■ LINEAR CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ SHORT CIRCUIT PROTECTED ■ DOUBLE STATUS FLAG DIAGNOSTIC (OPEN DRAIN) ■ INTEGRATED CLAMPING CIRCUITS ■ UNDERVOLTAGE PROTECTION ■ ESD PROTECTION

DESCRIPTION

The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. TYPE R DS(on) IOUT VCC VN772K 120 m Ω (*) 9A (**) 36V SO-28 PIN FUNCTION No NAME FUNCTION 1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch)

2 INPUT 3 Input of Switch 3 (low-side switch)

4, 11 N.C. Not Connected 5, 10, 19, 24 VCC Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage

6 GND Ground of Switches 1 and 2 (high-side switches)

7 INPUT 1 Input of Switch 1 (high-side switches)

8 DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)

9 INPUT 2 Input of Switch 2 (high-side switch)

12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)

13 INPUT 4 Input of Switch 4 (low-side switch)

16, 17 SOURCE 4 Source of Switch 4 (low-side switch) 20, 21 SOURCE 2 Source of Switch 2 (high-side switch) 22, 23 SOURCE 1 Source of Switch 1 (high-side switch) 26, 27 SOURCE 3 Source of Switch 3 (low-side switch)

OVERTEMP. 1 Vcc GND INPUT1 SOURCE1 OVERVOLTAGE LOGIC DRIVER 1 DIAG Vcc CLAMP UNDERVOLTAGE CLAMP 1 OPENLOAD ON 1 CURRENT LIMITER 1 OPENLOAD OFF 1 SOURCE2 DRIVER 2 CLAMP 2 OPENLOAD ON 2 OPENLOAD OFF 2 OVERTEMP. 2 INPUT2 CURRENT LIMITER 2 Overvoltage Gate Linear DRAIN3 SOURCE3 Clamp Current Limiter Control Over Temperature INPUT3 Overvoltage Gate Linear DRAIN4 SOURCE4 Clamp Current Limiter Control Over Temperature INPUT4

Symbol Parameter Value Unit R thj-case Thermal Resistance Junction-case (High-side switch) MAX 20 °C/W R thj-case Thermal Resistance Junction-case (Low-side switch) MAX 20 °C/W R thj-amb Thermal Resistance Junction-ambient MAX 60 °C/W ABSOLUTE MAXIMUM RATING DUAL HIGH SIDE SWITCH Symbol Parameter Value Unit VCC DC Supply Voltage 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA IOUT DC Output Current Internally Limited A - IOUT Reverse DC Output Current - 6 A IIN DC Input Current +/- 10 mA ISTAT DC Status Current +/- 10 mA VESD Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - STATUS - OUTPUT - V CC 4000 4000 5000 5000 V V V V P tot Power Dissipation Tc=25°C 6 W Tj Junction Operating Temperature Internally Limited °C Tc Case Operating Temperature - 40 to 150 °C Tstg Storage Temperature - 55 to 150 °C

ABSOLUTE MAXIMUM RATING (continued) LOW SIDE SWITCHES ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V<VCC <36V; -40°C< Tj <150°C, unless otherwise specified) POWER OUTPUTS (Per each channel) SWITCHING (Per each channel) (VCC =13V) () Per device Symbol Parameter Value Unit VDS Drain-source Voltage (VIN=0V) Internally Clamped V VIN Input Voltage Internally Clamped V IIN Input Current +/-20 mA R IN MIN Minimum Input Series Impedance 150 Ω ID Drain Current Internally Limited A IR Reverse DC Output Current -10.5 A VESD1 Electrostatic Discharge (R=1.5KΩ , C=100pF) 4000 V VESD2 Electrostatic Discharge on output pin only (R=330Ω , C=150pF) 16500 V Ptot Power Dissipation (TC =25°C) 6 W Tj Operating Junction Temperature Internally limited °C Symbol Parameter Test Conditions Min Typ Max Unit VCC () Operating Supply Voltage 5.5 13 36 V VUSD () Undervoltage Shut-down 3 4 5.5 V VOV () Overvoltage Shut-down 36 V R DS(on) On State Resistance IOUT =2A; Tj=25°C IOUT =2A; VCC >8V 120 m Ω m Ω IS (**) Supply Current Off State; VCC =13V; VIN=VOUT =0V Off State; VCC =13V; Tj =25°C; VIN=VOUT =0V On State; VCC =13V µA µA mA IL(off1) Off State Output Current VIN=V OUT =0V; VCC =36V; Tj=125°C 0 50 µA IL(off2) Off State Output Current VIN=0V; VOUT =3.5V -75 0 µA IL(off3) Off State Output Current VIN=V OUT =0V; VCC =13V; Tj =125°C 5 µA IL(off4) Off State Output Current VIN=V OUT =0V; VCC =13V; Tj =25°C 3 µA Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time R L=6.5Ω from VIN rising edge to VOUT =1.3V 30 µs td(off) Turn-off Delay Time R L=6.5Ω from VIN falling edge to VOUT =11.7V 30 µs dVOUT / dt(on) Turn-on Voltage Slope R L=6.5Ω from VOUT =1.3V to VOUT =10.4V See relative diagram V/µs dVOUT / dt(off) Turn-off Voltage SlopeR L=6.5Ω from VOUT =11.7V to VOUT =1.3V See relative diagram V/µs

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) INPUT PINS (Per each channel) LOGIC INPUT (Per each channel) STATUS PIN (Per each channel) PROTECTIONS (Per each channel) Symbol Parameter Test Conditions Min Typ Max Unit VIL Input Low Level 1.25 V IIL Low Level Input Current VIN=1.25V 1 µA VIH Input High Level 3.25 V IIH High Level Input Current VIN=3.25V 10 µA VI(hyst) Input Hysteresis Voltage 0.5 V VICL Input Clamp Voltage IIN=1mA IIN= -1mA 6.5 7.4 -0.7 8.5 V V Symbol Parameter Test Conditions Min Typ Max Unit VIL Input Low Level 1.25 V IIL Low Level Input Current VIN = 1.25V 1 µA VIH Input High Level 3.25 V IIH High Level Input Current VIN = 3.25V 10 µA VI(hyst) Input Hysteresis Voltage 0.5 V VICL Input Clamp Voltage IIN = 1mA IIN = -1mA 66 . 8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit VSTAT Status Low Output Voltage ISTAT = 1.6 mA 0.5 V ILSTAT Status Leakage Current Normal Operation; VSTAT = 5V 10 µA C STAT Status Pin Input Capacitance Normal Operation; VSTAT = 5V 100 pF VSCL Status Clamp Voltage ISTAT = 1mA ISTAT = - 1mA 66 . 8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit TTSD Shut-down Temperature 150 175 200 °C TR Reset Temperature 135 °C Thyst Thermal Hysteresis 7 15 °C tSDL Status Delay in Overload Conditions Tj>TTSD 20 µs Ilim Current limitation Tj=125°C 5.5V<VCC <36V 8.5 91 5 A A A V demag Turn-off Output Clamp Voltage IOUT =2A; L= 6mH V CC -41 VCC -48 VCC -55 V

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) OPENLOAD DETECTION (Per each channel) Symbol Parameter Test Conditions Min Typ Max Unit IOL Openload ON State Detection Threshold VIN=5V 50 100 200 mA tDOL(on) Openload ON State Detection Delay IOUT =0A 200 µs VOL Openload OFF State Voltage Detection Threshold V IN=0V 1.5 2.5 3.5 V TDOL(off) Openload Detection Delay at Turn Off 1000 µs

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40°C < Tj < 150°C, unless otherwise specified) OFF ON (Tj=25°C, unless otherwise specified) DYNAMIC SWITCHING SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ Max Unit VCLAMP Drain-source Clamp Voltage VIN=0V; ID =3.5A 40 45 55 V VCLTH Drain-source Clamp Threshold Voltage VIN=0V; ID =2mA 36 V VINTH Input Threshold Voltage VDS =V IN; ID =1mA 0.5 2.5 V IISS Supply Current from Input Pin VDS =0V; VIN=5V 100 150 µA VINCL Input-Source Clamp Voltage IIN=1mA IIN=-1mA -1.0 6.8 8 -0.3 V IDSS Zero Input Voltage Drain Current (VIN=0V) VDS =13V; VIN=0V; Tj=25°C VDS =25V; VIN=0V 75 µA Symbol Parameter Test Conditions Min Typ Max Unit R DS(on) Static Drain-source On Resistance VIN=5V; ID =3.5A; Tj=25°C VIN=5V; ID =3.5A 120 m Ω Symbol Parameter Test Conditions Min Typ Max Unit gfs (*) Forward Transconductance VDD =13V; ID =3.5A 9 S C OSS Output Capacitance V DS =13V; f=1MHz; VIN=0V 220 pF Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time VDD =15V; ID =3.5A Vgen=5V; Rgen=R IN MIN=150Ω 100 300 ns tr Rise Time 470 1500 ns td(off) Turn-off Delay Time 500 1500 ns tf Fall Time 350 1000 ns td(on) Turn-on Delay Time VDD =15V; ID =3.5A Vgen=5V; Rgen=2.2KΩ 0.75 2.3 µs tr Rise Time 4.6 14.0 µs td(off) Turn-off Delay Time 5.4 16.0 µs tf Fall Time 3.6 11.0 µs (dI/dt)on Turn-on Current Slope VDD =15V; ID =3.5A Vgen=5V; Rgen=R IN MIN=150Ω 6.5 A/ µs Q i Total Input Charge VDD =12V; ID =3.5A; VIN=5V Igen=2.13mA 18 nC Symbol Parameter Test Conditions Min Typ Max Unit VSD (*) Forward On Voltage I SD =3.5A; VIN=0V 0.8 V trr Reverse Recovery Time ISD =3.5A; dI/dt=20A/µs VDD =30V; L=200µH 220 ns Q rr Reverse Recovery Charge 0.28 µC IRRM Reverse Recovery Current 2.5 A

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% Symbol Parameter Test Conditions Min Typ Max Unit Ilim Drain Current Limit VIN=5V; VDS =13V VIN=5V; VDS =13V; Tj=125°C 6.5 91 2 A A tdlim Step Response Current Limit VIN=5V; VDS =13V 4.0 µs Tjsh Overtemperature Shutdown 150 175 °C Tjrs Overtemperature Reset 135 °C Igf Fault Sink Current V IN= 5V; VDS =13V; Tj=Tjsh 15 mA Eas Single Pulse Avalanche Energy starting Tj=25°C; VDD =24V VIN=5V; Rgen=R IN MIN=150Ω; L=24mH 200 mJ

tDOL(off) OPEN LOAD STATUS TIMING (with external pull-up) VINn VSTAT n OVER TEMP STATUS TIMING tSDLtSDL IOUT < IOLVOUT > VOL tDOL(on) Tj > TTSD TRUTH TABLE CONDITIONS INPUT OUTPUT STATUS Normal Operation L H L H H H Current Limitation L H H L X X H j < TTSD ) H (Tj > TTSD ) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > VOL L H H H L H Output Current < IOL L H L H H L SWITCHING TIME WAVEFORMS t t VOUTn VINn 80% 10% dVOUT /dt(on) td(off) 90% dVOUT /dt(off) td(on)

TYPICAL APPLICATION DIAGRAM

OPEN LOAD without external pull-up STATUS n INPUT n NORMAL OPERATION UNDERVOLTAGE VCC VUSD VUSDhyst INPUT n OVERVOLTAGE VCC STATUS n INPUT n STATUS n STATUS n INPUT n STATUS n INPUT n OPEN LOAD with external pull-up undefined OVERTEMPERATURE INPUT n STATUS n TTSD TR Figure1: Waveforms Tj OUTPUT VOLTAGE n VCC <V OV OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT CURRENT n VOUT >V OL VOL VCC >V OV

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH High Level Input Current Input Clamp Voltage Status Leakage Current Off State Output Current Status Clamp VoltageStatus Low Output Voltage -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.25 0.5 0.75 1.25 1.5 1.75 2.25 2.5 IL(off1) (uA) Off state Vcc=36V Vin=Vout=0V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Iih (uA) Vin=3.25V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vicl (V) Iin=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.01 0.02 0.03 0.04 0.05 Ilstat (uA) Vstat=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vstat (V) Istat=1.6mA -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vscl (V) Istat=1mA

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Input Hysteresis VoltageInput Low Level On State Resistance Vs Tcase On State Resistance Vs VCC Input High LevelOpenload On State Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 100 120 140 160 Ron (mOhm) Iout=2A Vcc=8V; 13V & 36V 5 1 01 52 02 53 03 54 0 Vcc (V) 100 110 120 Ron (mOhm) Iout=5A Tc= - 40°C Tc=25°C Tc=150°C -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 110 120 130 140 150 Iol (mA) Vcc=13V Vin=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 2.2 2.4 2.6 2.8 3.2 3.4 3.6 Vih (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Vil (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 Vhyst (V)

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Overvoltage Shutdown Turn-on Voltage Slope Turn-off Voltage Slope ILIM Vs Tcase Openload Off State Voltage Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Vov (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Vol (V) Vin=0V -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 200 300 400 500 600 700 800 dVout/dt(on) (V/ms) Vcc=13V Rl=6.5Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 200 250 300 350 400 450 500 550 600 dVout/dt(off) (V/ms) Vcc=13V Rl=6.5Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Ilim (A) Vcc=13V

Id(A) 500 550 600 650 700 750 800 850 900 950 1000 Vsd (mV) Vin=0V 0 0.25 0.5 0.75 1 1.25 Id(A) 100 150 200 250 300 350 400 450 500 Rds(on) (mOhm) Tj=25ºC Tj=150ºC Tj= - 40ºC Vin=2.5V 33 . 544 . 555 . 566 . 5 7 Vin(V) 100 110 120 Rds(on) (mOhm) Id=3.5A Tj=150ºC Tj= - 40ºC Tj=25ºC 012345678 Id(A) Gfs (S) Vds=13V Tj=25ºC Tj=150ºC Tj=-40ºC 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) 100 120 140 Rds(on) (mOhm) Id=6A Id=1A Id=6A Id=1A Id=6A Id=1A Tj=25ºC Tj=150ºC Tj=-40ºC Static Drain-Source On resistance Vs. Input Voltage Static Drain-Source On resistance Vs. Input Voltage Derating Curve Source-Drain Diode Forward Characteristics Static Drain Source On Resistance ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH ES

Input Voltage Vs. Input Charge Vin(V) Idon(A) Vds=13.5V Tj=150ºC Tj=25ºC Tj=-40ºC 100 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) 0.25 0.5 0.75 1.25 1.5 1.75 2.25 di/dt(A/us) Vin=3.5V Vdd=15V Id=3.5A Id(A) 100 120 140 Rds(on) (mOhm) Tj=25ºC Tj=150ºC Tj=-40ºC Vin=5V Vin=3.5V Vin=5V Vin=5V Vin=3.5V Vin=3.5V 0 5 10 15 20 25 Qg(nC) Vin(V) Vds=12V Id=3.5A 100 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) 100 150 200 250 300 dv/dt(V/us) Vin=5V Vdd=15V Id=3.5A Turn off drain source voltage slope 100 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) di/dt(A/us) Vin=5V Vdd=15V Id=3.5A Static Drain-Source On Resistance Vs. Id Transfer Characteristics Turn On Current Slope Turn On Current Slope ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH ES (continued)

100 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) 100 150 200 250 300 dv/dt(v/us) Vin=3.5V Vdd=15V Id=3.5A 0 5 10 15 20 25 30 35 Vds(V) 100 200 300 400 500 600 C(pF) f=1MHz Vin=0V 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 0.5 1.5 2.5 3.5 4.5 5.5 t(us) td(on) tf td(off) trVdd=15V Id=3.5A Vin=5V Vin(V) 200 400 600 800 1000 1200 1400 1600 t(ns) tf tr td(on) td(off) Vdd=15V Id=3.5A Rg=150ohm 01 234 5678 9 1 0 1 1 1 2 1 3 VDS(V) ID(A) Vin=2.5V Vin=4V Vin=4.5V Vin=3V Vin=2V Vin=5V -50 -25 0 25 50 75 100 125 150 175 T(ºC) 0.5 0.75 1.25 1.5 1.75 2.25 Rds(on) Vin=5V Id=3.5A Turn Off Drain-Source Voltage Slope Capacitance Variations Switching Time Resistive Load Switching Time Resistive Load Output Characteristics Normalized On Resistance Vs. Temperature ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH ES (continued)

Normalized Input Threshold Voltage Vs. Temperature Step Response Current Limit Current Limit Vs. Junction Temperature -50 -25 0 25 50 75 100 125 150 175 T(ºC) 0.7 0.75 0.8 0.85 0.9 0.95 1.05 1.1 1.15 Vin(th) Vds=Vin Id=1mA 5 1 01 52 02 53 03 5 Vdd(V) 3.5 4.5 5.5 6.5 Tdlim(us) Vin=5V Rg=150ohm -50 -25 0 25 50 75 100 125 150 175 Tj (ºC) Ilim (A) Vds=13V Vin=5V ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH ES (continued)

DIM. mm. inch A 2.65 0.104 a1 0.10 0.30 0.004 0.012 b 0.35 0.49 0.013 0.019 b1 0.23 0.32 0.009 0.012 C 0.50 0.020 c1 45 (typ.) D 17.7 18.1 0.697 0.713 E 10.00 10.65 0.393 0.419 e 1.27 0.050 e3 16.51 0.650 F 7.40 7.60 0.291 0.299 L 0.40 1.27 0.016 0.050 S8 ( m a x . ) SO-28 MECHANICAL DATA

SO-28 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 28 Bulk Q.ty 700 Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed A C B REEL DIMENSIONS

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com