Datasheet - VN7000AY - High-side driver with MultiSense analog feedback for automotive applications
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 48
Technical content
Datasheet sections
- 1 Block diagram and pin description
- 2 Electrical specification
- 2.1 Absolute maximum ratings
- 2.2 Thermal data
- 2.3 Main electrical characteristics
- 2.4 Waveforms
- 2.5 Electrical characteristics curves
- 3 Protections
- 3.1 Power limitation
- 3.2 Thermal shutdown
- 3.3 Current limitation
- 3.4 Negative voltage clamp
- 4 Application information
- 4.1 GND protection network against reverse battery
- 4.2 Immunity against transient electrical disturbances
- 4.3 MCU I/Os protection
- 4.4 Multisense - analog current sense
- 4.4.1 Principle of MultiSense signal generation
- 4.4.2 TCASE and VCC monitor
- 4.4.3 Short to VCC and OFF-state open-load detection
- 5 Maximum demagnetization energy (VCC = 16 V)
- 6 Package and PCB thermal data
- 6.1 PowerSSO-36 thermal data
- 7 Package information
- 7.1 PowerSSO-36 package information
- 7.2 PowerSSO-36 packing information
- 7.3 PowerSSO-36 marking information
Features
Max transient supply voltage VCC 40 V Operating voltage range VCC 4 to 28 V Minimum cranking supply voltage (VCC decreasing) VUSD_Cranking 3 V Typ. on-state resistance RON 1.3 mΩ Current limitation (typ) ILIMH 200 A Standby current (max) ISTBY 20 µA
- AEC-Q100 qualified
- Extreme low voltage operation for deep cold cranking applications (compliant with LV124, revision 2013)
- General – Single channel smart high-side driver – Very low standby current – Compatible with 3 V and 5 V CMOS outputs
- MultiSense diagnostic functions – Multiplexed analog feedback of: load current, V CC supply voltage and TCHIP device temperature – Overload and short to ground indication – Thermal shutdown indication – OFF-state open-load detection – Output short to V CC detection – Sense enable/disable
- Protections – Undervoltage shutdown – Overvoltage clamp – Load current limitation – Latch-off on over-temperature (ΔT J_SD or TSD) – Loss of ground and loss of V CC – Reverse battery with self switch of the PowerMOS – Electrostatic discharge protection
Applications
- All types of Automotive resistive, inductive and capacitive loads
- Especially intended for Automotive power distribution applications Product status VN7000AY Product summary Order code VN7000AYTR Package PowerSSO-36 Packing Tape and reel High-side driver with MultiSense analog feedback for automotive applications VN7000AY Datasheet DS11412 - Rev 7 - January 2020 For further information contact your local STMicroelectronics sales office.
Description
The device is a single channel high-side driver manufactured using ST proprietary VIPower® M0-7 technology and housed in PowerSSO-36 package. The device is designed to drive 12 V automotive grounded loads through a 3 V and 5 V CMOS- compatible interface, providing protection and diagnostics. The device integrates advanced protective functions such as load current limitation and overload management by ΔTJ and over-temperature shut-down with latch-off. A toggling on the INPUT pin unlatches the output in case of fault. A dedicated multifunction multiplexed analog output pin delivers sophisticated diagnostic functions including high precision proportional load current sense, supply voltage feedback and chip temperature sense, in addition to the detection of overload and short circuit to ground, short to VCC and OFF-state open-load. A sense enable pin allows OFF-state diagnosis to be disabled during the module low- power mode as well as external sense resistor sharing among similar devices. A R_mode pin allows to switch low respectively high RDSon operating mode, so to adapt current sense precision and current limitation accordingly to the selected load. VN7000AY DS11412 - Rev 7 page 2/48
1 Block diagram and pin description
Figure 1. Block diagram Table 1. Pin functions state. It unlatches the output in case of fault. supply voltage or chip temperature. SEn Active high compatible with 3 V and 5 V CMOS outputs pin; it enables the MultiSense diagnostic pin. SEL0,1 Active high compatible with 3 V and 5 V CMOS outputs pin; they address the MultiSense multiplexer.
Figure 2. Configuration diagram (top view) Note: The pins from 1 to 6, from 13 to 18, from 19 to 24 and from 31 to 36 have to be soldered together on the PCB. Table 2. Suggested connections for unused and not connected pins
2 Electrical specification
Figure 3. Current and voltage conventions Note: V F = VOUT - VCC when VOUT > VCC and INPUT = LOW.
2.1 Absolute maximum ratings
below for extended periods may affect device reliability. Table 3. Absolute maximum ratings
2.2 Thermal data
Table 4. Thermal data
- Device mounted on four-layer 2s2p PCB
- Device mounted on two-layer 2s0p PCB with 2 cm² heatsink copper trace
2.3 Main electrical characteristics
7 V < VCC < 28 V; - 40 °C < Tj < 150 °C, unless otherwise specified. All typical values refer to VCC = 13 V; Tj = 25 °C, unless otherwise specified. Table 5. Electrical characteristics during cranking
- Parameter guaranteed by design and characterization; not subject to production test.
Table 6. Power section
- Parameter guaranteed only at V CC = 4 V and Tj = 25 °C
- PowerMOS leakage included.
- Parameter specified by design; not subjected to production test.
Table 7. Switching (R_mode = Low)
- See Figure 8. Switching time and Pulse skew.
- Parameter guaranteed by design and characterization; not subjected to production test.
Table 8. Switching (R_mode = High)
- See Figure 8. Switching time and Pulse skew.
- Parameter guaranteed by design and characterization; not subjected to production test.
Table 9. Logic inputs
7 V < VCC < 28 V; -40°C < Tj < 150°C
Table 10. Protections
7 V < VCC < 18 V; -40°C < Tj < 150°C
4 V < VCC < 18 V; VIN = 5 V;
904 V < VCC < 18 V; VIN = 5 V;
- Parameter guaranteed by design and characterization; not subjected to production test.
Table 11. MultiSense
Symbol Parameter Test conditions Min. Typ. Max. Unit K4 IOUT/ISENSE IOUT = 45 A; VSENSE = 4 V; VSEn = 5 V; R_mode = Low -15% 25000 15% dK4/K4 (1) (2) Current sense ratio drift IOUT = 45 A; VSENSE = 4 V; VSEn = 5 V; R_mode = Low -6 6 % ISENSE0 MultiSense leakage current MultiSense disabled: VSEn = 0 V 0 0.5 µA MultiSense disabled: VSEn = 0 V -1 V < VSENSE < 5 V(1) -0.5 0.5 MultiSense enabled: VSEn = 5 V; diagnostic selected; VIN = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT = 0 A MultiSense enabled: VSEn = 5 V; diagnostic selected: VIN = 0 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 0 A 0 2 VOUT_MSD (1) Output Voltage for MultiSense shutdown VSEn = 5 V; RSENSE = 2.7 kΩ; VIN = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT = 30 A 5 V VSENSE_SAT Multisense saturation voltage VCC = 7 V; RSENSE = 10 kΩ; VSEn = 5 V; VIN0 = 5 V; VSEL = 0 V; VSEL1 = 0 V; IOUT = 30 A; Tj = -40°C; R_mode=0V 4.75 V ISENSE_SAT (1) CS saturation current VCC = 7 V; VSENSE = 4 V; VIN0 = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; Tj = 150°C; R_mode=0V 4 mA IOUT_SAT (1) Output saturation current VCC = 7 V; VSENSE = 4 V; VIN = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; Tj = 150°C; R_mode=0V 110 A OFF-state diagnostic VOL OFF-state open-load voltage detection threshold VSEn = 5 V; VIN = 0 V; VSEL0 = 0 V; VSEL1 = 0 V 2 3 4 V IL(off2) (3) OFF-state output sink current VIN = 0 V; VOUT = VOL; Tj = -40°C to 125°C -100 -15 µA tDSTKON OFF-state diagnostic delay time from falling edge of INPUT (see Figure 11. TDSTKON ) VSEn = 5 V; VIN = 5 V to 0 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT = 0 A; VOUT = 4 V 100 350 750 µs tD_OL_V Settling time for valid OFF- state open load diagnostic indication from rising edge of SEn VIN = 0 V; VSEL0 = 0 V; VSEL1 = 0 V; VOUT = 4 V; VSEn = 0 V to 5 V 60 µs tD_VOL OFF-state diagnostic delay time from rising edge of VOUT VSEn = 5 V; VIN = 0 V; VSEL0 = 0 V; VSEL1 = 0 V; VOUT = 0 V to 4 V 5 30 µs Chip temperature analog feedback VSENSE_TC MultiSense output voltage proportional to chip temperature VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN = 0 V; RSENSE = 1 kΩ; Tj = -40°C 2.325 2.41 2.495 V VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN = 0 V; RSENSE = 1 kΩ; Tj = 25°C 1.985 2.07 2.155 V VN7000AY Main electrical characteristics DS11412 - Rev 7 page 11/48
Symbol Parameter Test conditions Min. Typ. Max. Unit VSENSE_TC MultiSense output voltage proportional to chip temperature VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN = 0 V; RSENSE = 1 kΩ; Tj = 125°C 1.435 1.52 1.605 V dVSENSE_TC/dT(1) Temperature coefficient Tj = -40°C to 150°C -5.5 mV/ K Transfer function VSENSE_TC (T) = VSENSE_TC (T0) + dVSENSE_TC / dT * (T - T0) VCC supply voltage analog feedback VSENSE_VCC MultiSense output voltage proportional to VCC supply voltage VCC = 13 V; VSEn = 5 V; VSEL0 = 5 V; VSEL1 = 5 V; VIN = 0 V; RSENSE = 1 kΩ 1.55 1.62 1.69 V Transfer function (4) VSENSE_VCC = VCC / 8 Fault diagnostic feedback (see Table 12. Truth table) VSENSEH MultiSense output voltage in fault condition VCC = 13 V; RSENSE = 1 kΩ; VIN = 0 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT = 0 A; VOUT = 4 V 5 6.6 V ISENSEH MultiSense output current in fault condition VCC = 13 V; VSENSE = 5 V 7 20 30 mA MultiSense timings (current sense mode - see Figure 9. MultiSense timings (current sense mode)) (5) tDSENSE1H Current sense settling time from rising edge of SEn VIN = 5 V; VSEn = 0 V to 5 V; RSENSE = 1 kΩ; RL = 0.43 Ω 60 µs tDSENSE1L Current sense disable delay time from falling edge of SEn VIN = 5 V; VSEn = 5 V to 0 V; RSENSE = 1 kΩ; RL = 0.43 Ω 5 20 µs tDSENSE2H Current sense settling time from rising edge of INPUT VIN = 0 V to 5 V; VSEn = 5 V; RSENSE = 1 kΩ; RL = 0.43 Ω 470 720 µs ΔtDSENSE2H Current sense settling time from rising edge of IOUT (dynamic response to a step change of IOUT) VIN = 5 V; VSEn = 5 V; RSENSE = 1 kΩ; ISENSE = 90 % of ISENSEMAX; RL = 0.43 Ω 300 µs tDSENSE2L Current sense turn-off delay time from falling edge of INPUT VIN = 5 V to 0 V; VSEn = 5 V; RSENSE = 1 kΩ; RL = 0.43 Ω 210 330 µs MultiSense timings (chip temperature sense mode - see Figure 10. Multisense timings (chip temperature and VCC sense mode)) (5) tDSENSE3H VSENSE_TC settling time from rising edge of SEn VSEn = 0 V to 5 V; VSEL0 = 0 V; VSEL1 = 5 V; RSENSE = 1 kΩ 60 µs tDSENSE3L VSENSE_TC disable delay time from falling edge of SEn VSEn = 5 V to 0 V; VSEL0 = 0 V; VSEL1 = 5 V; RSENSE = 1 kΩ 20 µs MultiSense timings (VCC voltage sense mode - see Figure 10. Multisense timings (chip temperature and VCC sense mode)) (5) tDSENSE4H VSENSE_VCC settling time from rising edge of SEn VSEn = 0 V to 5 V; VSEL0 = 5 V; VSEL1 = 5 V; RSENSE = 1 kΩ 60 µs tDSENSE4L VSENSE_VCC disable delay time from falling edge of SEn VSEn = 5 V to 0 V; VSEL0 = 5 V; VSEL1 = 5 V; RSENSE = 1 kΩ 20 µs MultiSense timings (Multiplexer transition times)(5) tD_CStoTC MultiSense transition delay from current sense to TC sense VIN = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V to 5 V; IOUT = 30 A; RSENSE = 1 kΩ 60 µs VN7000AY Main electrical characteristics DS11412 - Rev 7 page 12/48
- Parameter guaranteed by design and characterization; not subjected to production test.
- All values refer to V CC = 13 V; Tj = 25°C, unless otherwise specified.
- Parameter granted at -40 °C < T j < 125 °C
- V CC sensing and TC sensing are referred to GND potential.
- Transition delay are measured up to +/- 10% of final conditions.
Figure 4. IOUT/ISENSE vs. IOUT - High RDSON mode
Figure 11. TDSTKON Table 12. Truth table
- Refer to Table 13. MultiSense multiplexer addressing
Table 13. MultiSense multiplexer addressing
2.4 Waveforms
Figure 12. Latch functionality - behavior in hard short circuit condition (TAMB << TTSD) Figure 13. Latch functionality - behavior in hard short circuit condition
2.5 Electrical characteristics curves
Figure 14. OFF-state output current Figure 15. Standby current Figure 16. IGND(ON) vs. Iout Figure 17. Logic input high level voltage Figure 18. Logic input low level voltage Figure 19. High level logic input current
3 Protections
3.1 Power limitation
The basic working principle of this protection consists of an indirect measurement of the junction temperature swing ΔTj through the direct measurement of the spatial temperature gradient on the device surface in order to automatically shut off the output MOSFET as soon as ΔTj exceeds the safety level of ΔTj_SD. The protection prevents fast thermal transient effects and, consequently, reduces thermo-mechanical fatigue.
3.2 Thermal shutdown
In case the junction temperature of the device exceeds the maximum allowed threshold (typically 175°C), it automatically switches off and the diagnostic indication is triggered.
3.3 Current limitation
The device is equipped with an output current limiter in order to protect the silicon as well as the other components of the system (e.g. bonding wires, wiring harness, connectors, loads, etc.) from excessive current flow. Consequently, in case of short circuit, overload or during load power-up, the output current is clamped to a safety level, ILIMH, by operating the output power MOSFET in the active region.
3.4 Negative voltage clamp
In case the device drives inductive load, the output voltage reaches negative value during turn off. A negative voltage clamp structure limits the maximum negative voltage to a certain value, VDEMAG, allowing the inductor energy to be dissipated without damaging the device. VN7000AY Protections DS11412 - Rev 7 page 24/48
4 Application information
Figure 34. Application diagram
4.1 GND protection network against reverse battery
Figure 35. Simplified internal structure condition. The protection is provided by internal structures.
Application information
DS11412 - Rev 7 page 25/48
same low ohmic path as in regular operating conditions, no additional power dissipation has to be considered.
4.2 Immunity against transient electrical disturbances
into the VCC pin, is tested in accordance with ISO7637-2:2011 (E) and ISO 16750-2:2010. conduction along supply line. through VCC and GND terminals. does not perform as designed during the test but returns automatically to normal operation after the test”. Table 14. ISO 7637-2 - electrical transient conduction along supply line
- U S is the peak amplitude as defined for each test pulse in ISO 7637-2:2011(E), chapter 5.6.
- With 40 V external suppressor referred to ground (-40°C < T j < 150 °C).
4.3 MCU I/Os protection
latching-up and to protect the HSD inputs. required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
4.4 MultiSense - analog current sense
- Current monitor: current mirror of channel output current
- V CC monitor: voltage propotional to VCC
- T CASE: voltage propotional to chip temperature Those signals are routed through an analog multiplexer which is configured and controlled by means of SELx and SEn pins, according to the address map in MultiSense multiplexer addressing Table.
Figure 36. MultiSense and diagnostic – block diagram
4.4.1 Principle of MultiSense signal generation
Figure 37. MultiSense block diagram
- Current mirror proportional to the load current in normal operation, delivering current proportional to the load according to a known ratio named K
- Diagnostics flag in fault conditions delivering fixed voltage V SENSEH The current delivered by the current sense circuit, ISENSE, can be easily converted to a voltage VSENSE by using an external sense resistor, RSENSE, allowing continuous load monitoring and abnormal condition detection. Normal operation (channel ON, no fault, SEn active) While device is operating in normal conditions (no fault intervention), VSENSE calculation can be done using simple equations Current provided by MultiSense output: ISENSE = IOUT/K Voltage on RSENSE: VSENSE = RSENSE · ISENSE = RSENSE · IOUT/K Where:
- V SENSE is the voltage measurable on RSENSE resistor
- I SENSE is the current provided from MultiSense pin in current output mode
- I OUT is the current flowing through output VN7000AY MultiSense - analog current sense DS11412 - Rev 7 page 28/48
- K factor represents the ratio between PowerMOS cells and SenseMOS cells; its spread includes geometric factor spread, current sense amplifier offset and process parameters spread of overall circuitry specifying the ratio between IOUT and ISENSE. Failure flag indication In case of power limitation/overtemperature, the fault is indicated by the MultiSense pin which is switched to a “current limited” voltage source, VSENSEH. In any case, the current sourced by the MultiSense in this condition is limited to ISENSEH.
Figure 38. Analog HSD – open-load detection in off-state
Figure 39. Open-load / short to VCC condition Table 15. MultiSense pin levels in off-state
4.4.2 TCASE and VCC monitor
device GND and the microcontroller input GND reference. Figure 1 shows the link between VMEASURED and the real VSENSE signal.
Figure 40. GND voltage shift Battery monitoring channel provides VSENSE = VCC / 8. where dVSENSE_TC / dT ~ typically -5.5 mV/K (for temperature range (-40 °C to 150 °C)).
4.4.3 Short to VCC and OFF-state open-load detection
current consumption to increase in normal conditions, i.e. when load is connected.
5 Maximum demagnetization energy (VCC = 16 V)
Figure 41. Maximum turn off current versus inductance
6 Package and PCB thermal data
6.1 PowerSSO-36 thermal data
Figure 42. PowerSSO-36 PC board
Table 16. PCB properties Figure 43. Rthj-amb vs PCB copper area in open box free air conditions
Table 17. Thermal parameters
7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
7.1 PowerSSO-36 package information
Figure 46. PowerSSO-36 package outline
Package information
DS11412 - Rev 7 page 37/48
Table 18. PowerSSO-36 mechanical data
7.2 PowerSSO-36 packing information
Figure 47. PowerSSO-36 reel 13" Table 19. Reel dimensions
- All dimensions are in mm.
Figure 48. PowerSSO-36 carrier tape Table 20. PowerSSO-36 carrier tape dimensions
- All dimensions are in mm.
Figure 49. PowerSSO-36 schematic drawing of leader and trailer tape
7.3 PowerSSO-36 marking information
Figure 50. PowerSSO-36 marking information prior to any decision to use these engineering samples to run a qualification activity. Commercial Samples: fully qualified parts from ST standard production with no usage restrictions.
Revision history
Table 21. Document revision history 22-Feb-2016 1 Initial release.
- changed "Shutdown current" parameter name to "Current limitation" and value to 190 A
- changed V USD_Cranking value
- removed feature "Automotive qualified"
- changed I STBY Max. value to 20 µA Section "Description"
- updated text Table 1: "Pin functions"
- updated FaultRST pin description Table 3: "Absolute maximum ratings"
- updated V CC, VCCPK and ISENSE Table 4: "Thermal data"
- R thj-board parameter changed to Rthj-case Table 5: "Electrical characteristics during cranking"
- updated V USD_Cranking and VUSD Max. values
- updated R ON_L, RON_H and TTSD Test conditions
- updated V clamp Table 6: "Power section"
- changed I STBY Max. value to 20 µA
- changed I L(off) Max. value to 20 µA Table 7: "Switching"
- added junction temperature to delay time and voltage slope Parameter descriptions
- updated T SKEW values Table 9: "Protections"
- Changed I SD parameter to ILIMH
- added parameters I LIML and ΔTJ_SD
- updated V SENSE_SAT, ISENSE_SAT and IOUT_SAT junction temperature test conditions
- updated MultiSense timings (Multiplexer transition times) I OUT test conditions Reworked Table 11: "Truth table" Table 12: "MultiSense multiplexer addressing"
- added footnote to OFF-state diag. column heading Reworked Section 3: "Protections" Section 4.4.2: "TCASE and VCC monitor"
- updated V SENSE equation in VCC monitor section 12-Jan-2017 3 Added "Automotive qualified" cover page feature
- updated pins 26 to 30
- removed R ON_REV_H
- changed R ON_REV_L symbol to RON_REV and updated parameter description
- added I S(ON) test conditon: VR_mode = 0 V
- added I GND(ON) test conditon: VR_mode = 0 V VN7000AY DS11412 - Rev 7 page 42/48
- Updated title (was “Switching”)
- updated I LIMH Min., Typ. and Max. values
- updated I LIML Typ. values
- updated ΔT J_SD and tLATCH_RST test conditions
- updated V SENSE_SAT test conditions 28-Mar-2018 4
- Inserted max value "12" for R ON_H parameter
- Inserted max value "3" for R ON_L parameter
- updated Typ. values
- updated Typ. values
- updated Min. Typ. and Max. values
- Updated I SENSE with VSENSE. 28-Jan-2019 5 Updated features in cover page. Updated:
- Figure 3. Current and voltage conventions
- Table 3. Absolute maximum ratings
- Table 6. Power section
- Table 7. Switching (R_mode = Low)
- Table 8. Switching (R_mode = High)
- Table 9. Logic inputs
- Table 10. Protections
- Table 11. MultiSense Minor text changes. 01-Aug-2019 6 Updated features and description in cover page. Updated:
- Figure 1. Block diagram
- Figure 2. Configuration diagram (top view)
- Figure 3. Current and voltage conventions
- Figure 10. Multisense timings (chip temperature and VCC sense mode)
- Figure 34. Application diagram
- Figure 35. Simplified internal structure
- Figure 36. MultiSense and diagnostic – block diagram
- Figure 38. Analog HSD – open-load detection in off-state
- Figure 40. GND voltage shift
- Table 1. Pin functions
- Table 2. Suggested connections for unused and not connected pins
- Table 3. Absolute maximum ratings
- Table 6. Power section
- Table 7. Switching (R_mode = Low)
- Table 9. Logic inputs VN7000AY DS11412 - Rev 7 page 43/48
01-Aug-2019 6 (continued)
- Table 10. Protections
- Table 11. MultiSense
- Table 12. Truth table
- Table 13. MultiSense multiplexer addressing
- Section 6.1 PowerSSO-36 thermal data Minor text changes. 14-Jan-2020 7 Updated features in cover page. Updated:
- Table 2. Suggested connections for unused and not connected pins
- Table 3. Absolute maximum ratings
- Table 4. Thermal data
- Table 6. Power section
- Table 7. Switching (R_mode = Low)
- Table 14. ISO 7637-2 - electrical transient conduction along supply line
- Table 11. MultiSense
- Section 6.1 PowerSSO-36 thermal data Added:
- Figure 4. IOUT/ISENSE vs. IOUT - High RDSON mode
- Figure 5. Current sense precision vs. IOUT - High RDSON mode
- Figure 6. IOUT/ISENSE vs. IOUT - Low RDSON mode
- Figure 7. Current sense precision vs. IOUT - Low RDSON mode
- Section 2.4 Waveforms
- Section 2.5 Electrical characteristics curves
- Section 5 Maximum demagnetization energy (VCC = 16 V) Minor text changes. VN7000AY DS11412 - Rev 7 page 44/48