VN66AFD

TN0601L VISHAY | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 4

Technical content

TN0601L, VN0606L, VN66AFD Vishay Siliconix Document Number: 70201 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 N-Channel 60-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47 VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33 VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 1.2 /C0087 /C0068Low Threshold: <1.6 V /C0068Low Input Capacitance: 35 pF /C0068Fast Switching Speed: 9 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068Easily Driven Without Buffer /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays Top View TO-226AA (TO-92) S D G TO-220SD (Tab Drain) Top View TN0601L VN0606L VN66AFD D G 2 “S” TN 0601L xxyy Device Marking Front View “S” VN 0606L xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Front View VN66AFD “S” xxyy “S” = Siliconix Logo xxyy = Date Code VN0606L TN0601L VN66AFD /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol TN0601L VN0606L VN66AFD b Unit Drain-Source Voltage VDS 60 60 60 Gate-Source Voltage VGS /C003420 /C003430 /C003430 V Continuous Drain Current TA= 25/C0095C 0.47 0.33 1.46Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.29 0.21 0.92 A Pulsed Drain Currenta IDM 1.5 1.6 3 TA= 25/C0095C 0.8 0.8 15 Power Dissipation TA= 100/C0095C PD 0.32 0.32 6 W Thermal Resistance, Junction-to-Ambient R thJA 156 156 /C0095 Thermal Resistance, Junction-to-Case R thJC 8.3 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing.

TN0601L, VN0606L, VN66AFD Vishay Siliconix www.vishay.com 11-2 Document Number: 70201 S-04279— Rev. E, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits TN0601L VN0606L VN66AFD Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 70 60 60 60 VDS = VGS , ID = 0.25 mA 1.6 0.5 2 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA 1.7 0.8 2 0.8 2.5 VDS = 0 V, VGS = /C003430 V /C0034100 /C0034100 Gate-Body Leakage IGSS TC = 125/C0095C /C0034500 nAGSS VDS = 0 V, VGS = /C003420 V /C003410 VDS = 60 V, VGS = 0 V 10 TJ = 125/C0095C 500 Zero Gate VoltageDrain Current IDSS VDS = 48 V, VGS = 0 V 1 1 /C0109ADSS TJ = 125/C0095C 100 /C0109 TC = 125/C0095C 10 VDS = 10 V, VGS = 4.5 V 0.5 0.25 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 2.4 1 1.5 1.5 A VGS = 3.5 V, ID = 0.04 A 4 5 VGS = 4.5 V, ID = 0.25 A 2 3 TJ = 125/C0095C 3.8 6 VGS = 5 V, ID = 0.3 A 2.3 5 /C0087Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A 1.2 3 /C0087 TJ = 125/C0095C 2.3 6 VGS = 10 V, ID = 1 A 1.3 1.8 3 TC = 125/C0095C 2.5 6 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 350 200 170 170 Common Source Output Conductanceb gos VDS = 10 V, ID = 0.1 A 0.3 mS Dynamic Input Capacitance C iss 35 60 50 50 Output Capacitance C oss VDS = 25 V, VGS = 0 V, f = 1 MHz 25 50 40 40 pF Reverse Transfer Capacitance C rss f = 1 MHz 6 10 10 10 Switchingc Turn-On Time tON VDD = 25 V, RL = 23 /C0087 /C0094 8 15 10 15 Turn-Off Time tOFF ID /C0094 1 A, VGEN = 10 V R G = 25 /C0087 9 15 10 15 ns Notes a. For DESIGN AID ONLY, not subject to production testing.. VNDQ06 b. Pulse test: PW /C0118 300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

TN0601L, VN0606L, VN66AFD Vishay Siliconix Document Number: 70201 S-04279— Rev. E, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 2.0 V 100 2.8 V 2.6 V 2.4 V 2.2 V 1.8 V VGS = 10 V 2.0 0123 4 5 1.6 1.2 0.8 0.4 VGS = 10 V 8 V 7 V 6 V 5 V 4 V 3 V 1.0 0.8 0.6 02 1 0 0.4 0.2 46 8 125/C0095C VDS = 15 V TJ = –55/C0095C 2.8 0 4 8 12 16 20 2.4 2.0 1.6 1.2 0.8 0.4 1.0 A ID = 0.1 A 2.5 2.0 1.5 0 0.4 2.0 1.0 0.5 0.8 1.2 1.6 VGS = 10 V 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = 10 V ID = 1.0 A 0.2 A 0.5 A 25/C0095C ID – Drain Current (A) ID – Drain Current (mA) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

TN0601L, VN0606L, VN66AFD Vishay Siliconix www.vishay.com 11-4 Document Number: 70201 S-04279— Rev. E, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) 0.01 0.5 0.1 1.0 1.5 2.0 VDS = 5 V –55/C0095C125/C0095C TJ = 150/C0095C C oss 120 100 01 0 5 0 20 30 40 C rss VGS = 0 V f = 1 MHz 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.1 5 K1 100 500 100.5 5 50 1 K 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM 15.0 12.5 10.0 0 100 600 7.5 5.0 200 300 400 2.5 500 ID = 1.0 A VDS = 30 V 0.1 1 10 100 VDD = 25 V R G = 25 /C0087 VGS = 0 to 10 V td(off) tr td(on) tf 25/C0095C C iss Single Pulse 0.01 ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)VDS = 48 V