VN610

VN610SP STMICROELECTRONICS | Alldatasheet

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Technical content

 VN610SP SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY n OUTPUT CURRENT: 45 A n CMOS COMPATIBLE INPUT n PROPORTIONAL LOAD CURRENT SENSE n UNDERVOLTAGE AND OVERVOLTAGE n SHUT-DOWN n OVERVOLTAGE CLAMP n THERMAL SHUT DOWN n CURRENT LIMITATION n VERY LOW STAND-BY POWER DISSIPATION n PROTECTION AGAINST: n LOSS OF GROUND AND LOSS OF V CC n REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN610SP is a monolithic device made using STMicroelectronics VIPower technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio). Active current limitation combined with thermal shut-down and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. TYPE R DS(on) IOUT VCC VN610SP 10m Ω 45A 36 V TARGET SPECIFICATION PowerSO-10  BLOCK DIAGRAM LOGIC UNDERVOLTAGE OVERVOLTAGE OVERTEMP. ILIM PwCLAMP K IOUT GND INPUT VCC OUTPUT CURRENT SENSE DRIVER VCC CLAMP VDSLIM (*) See application schematic at page 8

CONNECTION DIAGRAM (TOP VIEW) CURRENT AND VOLTAGE CONVENTIONS Symbol Parameter Value Unit VCC DC supply voltage 41 V -VCC Reverse DC supply voltage -0.3 V -IGND DC reverse ground pin current -200 mA IOUT DC output current Internally limited A -IOUT Reverse DC output current -50 A IIN DC input current +/- 10 mA VCSENSE Current sense maximum voltage -3 +15 V V VESD Electrostatic discharge (R=1.5kΩ ; C=100pF) 2000 V PTOT Power dissipation at TC <25°C 125 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C ICC IGND VCC VCC VSENSE OUTPUT IOUT CURRENT SENSE ISENSE INPUT IIN VIN VOUT GND OUTPUT OUTPUT OUTPUT OUTPUT OUTPUT GROUND INPUT C.SENSE N.C. N.C. VCC

ELECTRICAL CHARACTERISTICS (8V<VCC <36V; -40°C <Tj<150°C ; unless otherwise specified) POWER Note 1: Vclamp and VOV are correlated. Typical difference is 5V. SWITCHING (V CC =13V) PROTECTIONS Symbol Parameter Value Unit R thj-case Thermal resistance junction-case (MAX) 1 °C/W Rthj-amb Thermal resistance junction-ambient (MAX) 50 °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCC Operating supply voltage 5.5 13 36 V VUSD Undervoltage shutdown 3 4 5.5 V VOV Overvoltage shutdown (See Note 1) 36 42 48 V R ON On state resistance IOUT =15A; Tj=25oC IOUT =15A; Tj=150oC IOUT =9A; VCC =6V m Ω m Ω m Ω Vclamp Clamp Voltage ICC =20 mA (see note 1) 41 48 55 V IS Supply current Off state; INPUT= n.c.; VCC =13V On state; VIN=5V; VCC =13V; IOUT =0A; R SENSE =3.9K µA mA IL(off) Off state output current VIN=V OUT =0V 0 50 µA Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on delay time R1=0.87 Ω 50 µs td(off) Turn-on delay time R1=0.87 Ω 50 µs (dVOUT /dt)on Turn-on voltage slope R1=0.87Ω 0.3 V /µs (dVOUT /dt)off Turn-off voltage slope R1=0.87Ω 0.3 V /µs W ON Switching losses energy at turn-on R1=2.6Ω 1.0 mJ W OFF Switching losses energy at turn-off R1=2.6Ω 0.5 mJ Symbol Parameter Test Conditions Min Typ Max Unit Ilim DC Short circuit currentVCC =13V 5.5V<VCC <36V 45 75 120 120 A A TTSD Thermal shutdown temperature 150 175 200 °C TR Thermal reset temperature 135 °C THYST Thermal hysteresis 7 15 °C VDEMAG Turn-off output voltage clamp IOUT =2A; VIN=0; L=6mH Vcc-41 Vcc-48 Vcc-55 V VON Output voltage drop limitation IOUT =1.5A

ELECTRICAL CHARACTERISTICS (continued) CURRENT SENSE (9V ≤VCC ≤16V) (See Fig.1) LOGIC INPUT TRUTH TABLE Symbol Parameter Test Conditions Min Typ Max Unit K1 IOUT /ISENSE IOUT =1.5A; VSENSE =0.5V; Tj=- 4 0°C...150°C 3300 4400 6000 K2 IOUT /ISENSE IOUT =15A; VSENSE =4V; Tj=-40°C Tj=25°C...150°C 4200 4400 4900 4900 6000 5750 K3 IOUT /ISENSE IOUT =45A; VSENSE =4V; Tj=-40°C Tj=25°C...150°C 4200 4400 4900 4900 5500 5250 VSENSE Max analog sense output voltage VCC =5V; IOUT =7.5A; RSENSE =10KΩ VCC >8V; IOUT =15A; RSENSE =10KΩ V V VSENSEH Analog sense output voltage in overtemperature condition V CC =13V; RSENSE =3.9KΩ 5.5 V Symbol Parameter Test Conditions Min Typ Max Unit VIL Input low level voltage 1.25 V IIL Low level input current VIN=1.25V 1 µA VIH Input high level voltage 3.25 V IIH High level input current VIN=3.25V 10 µA VI(hyst) Input hysteresis voltage 0.5 V VICL Input clamp voltage IIN=1mA IIN=-1mA 6.5 7.4 -0.7 8.5 V V CONDITIONS INPUT OUTPUT SENSE Normal operation L H L H Nominal Overtemperature L H L L VSENSEH Undervoltage L H L L Overvoltage L H L L Short circuit to GND L H L L Short circuit to VCC L H H H < Nominal Negative output voltage clamp LL 0

ELECTRICAL TRANSIENT REQUIREMENTS SWITCHING CHARACTERISTICS ISO T/R 7637/1 Test Pulse TEST LEVELS I II III IV Delays and Impedance 1 -25 V -50 V -75 V -100 V 2 ms 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs5 0Ω 3b +25 V +50 V +75 V +100 V 0.1 µs5 0Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω ISO T/R 7637/1 Test Pulse TEST LEVELS RESULTS I II III IV

1 CCCC

2 CCCC

4 CCCC

C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. VOUT dVOUT /dt(on) tr 70% 10% tf dVOUT /dt(off) td(off)td(on) INPUT t t 90%

Fig 1:IOUT /ISENSE versus IOUT IOUT /ISENSE IOUT (A) 0 5 10 15 20 25 30 35 40 45 50 3000 3500 4000 4500 5000 5500 6000 6500 min.Tj=-40°C max.Tj=-40°C min.Tj=25...150°C max.Tj=25...150°C typical value

Figure1: Waveforms LOAD CURRENT LOAD CURRENT LOAD CURRENT OVERTEMPERATURE INPUT SENSE TTSD TR Tj LOAD CURRENT VOV VOVhystV CC >V USD SHORT TO GROUND INPUT LOAD CURRENT SENSE LOAD VOLTAGE INPUT LOAD VOLTAGE SENSE LOAD CURRENT <Nominal <Nominal SHORT TO V CC ISENSE = R SENSE V SENSEH

GND PROTECTION NETWORK AGAINST REVERSE BATTERY Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the R GND resistor. 1) RGND ≤ 600mV / (IS(on)max). 2) RGND ≥ (−VCC ) / (-IGND ) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in R GND (when VCC <0: during reverse battery situations) is: PD = (-VCC )2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where I S(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max *R GND ) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same R GND . If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (D GND ) in the ground line. A resistor (RGND =1kΩ) should be inserted in parallel to D GND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION D ldis necessary (Transil or MOV) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent theµC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current ofµC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit ofµC I/Os. -VCCpeak /Ilatchup≤ R prot≤ (VOH µC -VIH-VGND )/ IIHmax Calculation example: For VCCpeak = - 100V and Ilatchup≥ 20mA; VOH µC ≥ 4.5V 5kΩ ≤ Rprot≤ 10kΩ . Recommended R protvalue is 65kΩ. APPLICATION SCHEMATIC 1 1 VCC GND OUTPUT D GND R GND D ld µC +5V Rprot VGND INPUT +5V CURRENT SENSE R SENSE R prot

DIM. mm. inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h 0.50 0.002 Q 1.70 0.067 α 0º 8º DETAIL”A” PLANE SEATING α L F h A D D1== 0.10 A E1E3 C Q A B B DETAIL”A” SEATING PLANE 610 eB HE M0.25 PowerSO-10  MECHANICAL DATA

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