VN50300L

VN50300L VISHAY | Alldatasheet

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Document Number: 70216 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-1 N-Channel 500-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) VN50300L 300 @ VGS = 10 V 1 to 4.5 0.033 VN50300T 500 300 @ VGS = 10 V 1 to 4.5 0.022 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Moderate On-Resistance: 240 /C0087 /C0068Secondary Breakdown Free: 520 V /C0068Low Power/Voltage Driven /C0068Low Input and Output Leakage /C0068Excellent Thermal Stability /C0068Low Offset Voltage /C0068Full-Voltage Operation /C0068Easily Driven Without Buffer /C0068Low Error Voltage /C0068No High-Temperature “Run-Away” /C0068High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors,etc. /C0068Telephone Mute Switches, Ringer Circuits /C0068Power Supply, Converters /C0068Motor Control VN50300TTop View TO-226AA (TO-92) S D G G TO-236 (SOT-23) S D Top View VN50300L Device Marking Front View “S” VN5 0300L xxyy “S” = Siliconix Logo xxyy = Date Code V1 = Part Number Code for VN50300T w = Week Code ll = Lot Traceability Device Marking Top View V1wll /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol VN50300L VN50300T Unit Drain-Source Voltage VDS 500 500 Gate-Source Voltage VGS /C003430 /C003430 V /C0095 TA= 25/C0095C 0.033 0.022 Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.021 0.013 A Pulsed Drain Currenta IDM 0.013 0.08 TA= 25/C0095C 0.8 0.35 Power Dissipation TA= 100/C0095C PD 0.32 0.14 W Thermal Resistance, Junction-to-Ambient R thJA 156 350 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

www.vishay.com 11-2 Document Number: 70216 S-04279— Rev. D, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits Parameter Symbol Test Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 500 520 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 10 /C0109A 1 3.5 4.5 V VDS = 0 V, VGS = /C003420 V /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 nA VDS = 250 V, VGS = 0 V 0.05 /C0109Zero Gate Voltage Drain Current IDSS TJ = 125/C0095C 5 /C0109A On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 15 30 mA VGS = 10 V, ID = 10 mA 250 300 Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 5 mA 240 /C0087 TJ = 125/C0095C 450 700 Forward Transconductanceb gfs 5 14 Common Source Output Conductanceb gos VDS = 15 V, ID = 10 mA 0.005 mS Dynamic Input Capacitance C iss 5 20 Output Capacitance C oss VDS = 25 V, VGS = 0 V f = 1 MHz 1.7 10 pF Reverse Transfer Capacitance C rss f = 1 MHz 0.5 5 Switchingc td(on) 4.5 8 Turn-On Time tr VDD = 25 V, RL = 2.5 k/C0087 /C0094 7 12 td(off) ID /C0094 10 mA, VGEN = 10 V R G = 25 /C0087 8 20 ns Turn-Off Time tf 60 90 Notes a. For DESIGN AID ONLY, not subject to production testing. VNDO50 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

Document Number: 70216 S-04279— Rev. D, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 0123 4 5 VGS = 10 V 6 V 5 V 4.5 V 4 V 3.5 V VGS = 7 V 4 V 3.5 V 4.5 V 23 7 45 6 125/C0095C 25/C0095C VDS = 15 V TJ = –55/C0095C 325 300 275 200 05 2 5 250 225 10 15 20 VGS = 10 V 700 0 4 8 12 16 20 600 500 400 300 200 100 ID = 2 mA 10 mA 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = 10 V ID = 10 mA 5 mA 5 V ID – Drain Current (mA) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

www.vishay.com 11-4 Document Number: 70216 S-04279— Rev. D, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 1 10 100 100 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) td(on) td(off) tr tf 0.01 01 7 2 345 6 –55/C0095C VDS = 5 V 0.1 TJ = 150/C0095C 01 0 5 0 20 30 40 C iss C rss VGS = 0 V f = 1 MHz 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.1 1 100 10 1 K 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM 0 25 200 50 100 150 VDS = 250 V 400 V VDD = 25 V R G = 25 /C0087 VGS = 0 to 10 V 25/C0095C 125/C0095C C oss Single Pulse 0.01 ID = 10 mA ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)