VN30N STMICROELECTRONICS | Alldatasheet

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HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA n OUTPUT CURRENT (CONTINUOUS): 45A @ Tc=25oC n 5V LOGIC LEVEL COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE SHUT-DOWN n OPEN DRAIN DIAGNOSTIC OUTPUT n VERY LOW STAND-BY POWER DISSIPATION

DESCRIPTION

The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. September 1994 BLOCK DIAGRAM TYPE V DSS R DS(on) IOUT VCC VN30N 60 V 0.03 Ω 45 A 26 V PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN30N PENTAWATT horizontal VN30N (011Y) PENTAWATT in-line VN30N (012Y)

Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage 60 V IOUT Output Current (cont.) 45 A IR Reverse Output Current -45 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA VESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC1 0 8 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS VN30N

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.15 oC/W oC/W ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40≤ Tj≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 7 26 V R on On State Resistance I OUT =1 8A IOUT =1 8A T j=2 5 oC 0.06 0.03 Ω Ω IS Supply Current Off State T j ≥ 25 oC On State µA mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 18 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 30 µs tr Rise Time Of Output Current IOUT = 18 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 100 µs td(off) Turn-off Delay Time Of Output Current IOUT = 18 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 80 µs tf Fall Time Of Output Current IOUT = 18 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 40 µs (di/dt)on Turn-on Current Slope IOUT =1 8A IOUT =I OV 0.5 A/µs A/µs (di/dt)off Turn-off Current Slope IOUT =1 8A IOUT =I OV A/µs A/µs LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V V IH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN = 5 V 250 500 µA V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A -0.7 V V PROTECTIONS AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT (•) Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V V USD Under Voltage Shut Down 6.5 7 V VN30N

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit V SC L (•) Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A -0.7 V V tSC Switch-off Time in Short Circuit Condition at Start-Up R LOAD <1 0m Ω Tc =2 5 oC1 m s IOV Over Current R LOAD <1 0m Ω -40 ≤ Tc ≤ 125 oC 140 A IAV Average Current in Short Circuit R LOAD <1 0m Ω Tc =8 5 oC2 . 5 A IOL Open Load Current Level 5 1250 mA TTSD Thermal Shut-down Temperature 140 oC TR Reset Temperature 125 oC (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100µ s after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVER- SE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,V IH thresholds and VSTAT are increased by VF with respect to power GND). – The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board. In this way no shift of V IH,V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN30N

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 L3L5 Dia. A C D E F G L MM 1 P010E Pentawatt (vertical) MECHANICAL DATA VN30N

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F Pentawatt (horizontal) MECHANICAL DATA VN30N

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010D Pentawatt (In- Line) MECHANICAL DATA VN30N

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A VN30N