VN2410LS

TN2410L VISHAY | Alldatasheet

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TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix Document Number: 70204 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 N-Channel 240-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18 VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18 VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 3.5 /C0087 /C0068Secondary Breakdown Free: 260 V /C0068Low Power/Voltage Driven /C0068Low Input and Output Leakage /C0068Excellent Thermal Stability /C0068Low Offset Voltage /C0068Full-Voltage Operation /C0068Easily Driven Without Buffer /C0068Low Error Voltage /C0068No High-Temperature “Run-Away” /C0068High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. /C0068Telephone Mute Switches, Ringer Circuits /C0068Power Supply, Converters /C0068Motor Control TO-220AB (Tab Drain) Top View G S D 2 TO-226AA (TO-92) Top View S D G TO-92S (Copper Lead Frame) Top View S D G TN2410L VN2406L VN2410L VN2406D VN2410LS TN2410L “S” TN 2410L xxyy VN2406L “S” VN 2406L xxyy VN2410L “S” VN 2410L xxyy ’Device Marking Front View “S” = Siliconix Logo xxyy = Date Code VN2406D “S” xxyy VN2406D “S” = Siliconix Logo xxyy = Date Code ’Device Marking Front View ’Device Marking Front View “S” = Siliconix Logo xxyy = Date Code “S” VN 2410LS xxyy VN2410LS /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol TN2410L VN2406D b VN2406L VN2410L VN2410LS Unit Drain-Source Voltage VDS 240 240 240 240 240 Gate-Source Voltage VGS /C003420 /C003420 /C003420 /C003420 /C003420 V Pulsed Drain Currenta IDM 1 3 1.7 1.7 2 TA= 25/C0095C 0.8 20 0.8 0.8 0.9 Power Dissipation TA= 100/C0095C PD 0.32 8 0.32 0.32 0.4 W Thermal Resistance, Junction-to-Ambient R thJA 156 6.25c 156 156 139 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix www.vishay.com 11-2 Document Number: 70204 S-04279— Rev. F, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits TN2410L VN2406D/L VN2410L/LS Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 /C0109A 260 240 240 240 V VDS = 0 V, VGS = /C003415 V /C0034100 /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 /C0034500 nA VDS = 0 V, VGS = /C003420 V /C003410 VDS = 192 V, VGS = 0 V 0.01 1 TJ = 125/C0095C 1 100 /C0109Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V 10 10 /C0109A TJ = 125/C0095C 500 500 VDS = 10 V, VGS = 4.5 V 0.8 0.25 On-State Drain Currentb ID(on) VDS = 15 V, VGS = 10 V 1.5 1 1 A VGS = 2.5 V, ID = 0.1 A 7.5 10 10 VGS = 3.5 V, ID = 0.05 A 4.5 15 VGS = 4.5 V, ID = 0.2 A 4 10 /C0087Drain-Source On-Resistanceb rDS(on) TJ = 125/C0095C 7.5 20 /C0087 VGS = 10 V, ID = 0.5 A 3.5 6 10 TJ = 125/C0095C 6.5 14.8 24.7 VDS = 10 V, ID = 0.2 A 500 100 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 530 300 300 mS Input Capacitance C iss 115 135 135 135 Output Capacitance C oss VDS = 25 V, VGS = 0 V f = 1 MHz 30 50 50 50 pF Reverse Transfer Capacitance C rss f = 1 MHz 5 20 20 20 Switchingc tON 5 35 Turn-On Time td(on) 3 8 8 tr VDD = 60 V, RL = 150 /C0087 /C0094 2 8 8 tOFF ID /C0094 0.4 A, VGEN = 10 V R G = 25 /C0087 26 60 ns Turn-Off Time td(off) 20 23 23 tf 6 34 34 Notes a. For DESIGN AID ONLY, not subject to production testing. VNDB24 b. Pulse test: PW /C0118300 /C0109s duty cycle /C0118 2%. c. Switching time is essentially independent of operating temperature.

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix Document Number: 70204 S-04279— Rev. F, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) 1.0 0123 4 5 0.8 0.6 0.4 0.2 VGS = 10 V 4.0 V 3.5 V 3.0 V 2.5 V 2.0 V 200 160 120 VGS = 3 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 0.5 0.4 0.3 01 5 0.2 0.1 23 4 125/C0095C 25/C0095CTJ = –55/C0095C 0 0.1 0.6 0.2 0.3 0.4 0.5 0 4 8 12 16 20 ID = 0.1 A 0.5 A 1.0 A 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 0.1 A VGS = 10 V ID = 0.5 A VGS = 10 V VDS = 15 V ID – Drain Current (A) ID – Drain Current (mA) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix www.vishay.com 11-4 Document Number: 70204 S-04279— Rev. F, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Threshold Region Capacitance VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) 0.01 0.3 0.1 0.7 1.1 1.5 25/C0095C –55/C0095C TJ = 150/C0095C 400 300 01 0 5 0 200 100 20 30 40 VGS = 0 V f = 1 MHz VDS = 5 V C iss C oss C rss 100 1 100 21 0 52 0 5 0 VDD = 60 V R L = 150 /C0087 ID = 0.4 A 0.01 0.1 1 100 VDS = 60 V R G = 25 /C0087 Gate Charge Load Condition Effects on Switching ID – Drain Current (A)Q g – Total Gate Charge (pC) td(off) td(on) tr tf Drive Resistance Effects on Switching Source-Drain Diode Forward Voltage td(off) td(on) tr tf 15.0 12.5 10.0 0 400 2000 7.5 5.0 800 1200 1600 2.5 192 V 0 0.5 2.5 0.1 0.01 1.0 1.5 2.0 TJ = 25/C0095C TJ = 150/C0095C VSD – Source-Drain Voltage (V)R G – Gate Resistance (/C0087) ID = 0.5 A VDS = 120 V ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns) t – Switching Time (ns) IS – Source Current (A)

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix Document Number: 70204 S-04279— Rev. F, 16-Jul-01 www.vishay.com 11-5 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM