VN10LM ETC | Alldatasheet
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Technical content
TOPAZ SEMICONDUCTOR OSE D i §oas22eb ooo1L100 4 I a T-29-25 —_ TOPAZ ViN4OLM, SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE
ORDERING INFORMATION
Ml High Gate Oxide Breakdown, +40V min. MM High-Speed Pulse Amplifiers
1 Low Output and Transfer Capacitances 1 Logic Buffers
Mi Extended Safe Operating Area Line Drivers IH Solid-State Relays
1 Motor Controls
™ Power Supplies ABSOLUTE MAXIMUM RATINGS (T, = +25°C unless otherwise noted) Ta=#25°C To = +25°C i , Continuous Drain Current 29 44. mWrC T= 25°C To = 25°C : 4m VN10LM 9A Aaa Operating Junction SCHEMATIC DIAGRAM/PACKAGE PACKAGE DIMENSIONS 10-237 10-237 (See Package 7) Drain k Gate +} i Tab Source So D 3444 0-086
TOPAZ SEMICONDUCTOR OSE D fa0as22b OOo1101 & | TORAZ VN4GLM, VN2222LM SEMICONDUCTOR mo : er . ELECTRICAL CHARACTERISTICS (1, = +25°C unless otherwise noted) . ‘CHARACTERISTIC [__vwioum | vn2zza.m | UNIT TEST CONDITIONS [+| _ewmcrenene eat elisa rerun, ONT | TeroNemone BVoss Drain-Source Vv Ib=100uA, Ves = 0 Breakdown Voltage | 2| | Vosw Gate-Source oa | 19 | 265 [oe | 19/25 [Vv | to=1.0mA, Vos= Vos Ices Gate-Body +1.0)+100 £1.0|/+100) Vas = £30V, Vos = 0 Leakage Current Oe ee Leakage Current Vos = 0 a 5 | loo ON Drain Current [+9] 2| A | Vos = 10V, Vos = 10V (Note 1) 7 Vostew Drain-Source 15 v Vos = 5V, lo = 0.2A, ON Voltage (Note 1) Ls | [[as[es | [15 [375] Vos= 10, 1o=0.5A (Note 4) Drain-Source 3.0 75 Vas = 10V, In=0.5A (Note 1) Tosion ON Resistance On Common-Source Vos = 10V, Ip = 0.5A Forward Transcond. f=1KHz_ (Note 1) Ces, Common-Source Input Capacitance as Common-Source 1.3 Vos = 15V, Vos = 0 Reverse Transfer f=1MHz Capacitance oss | Common-Source Output Capacitance [16] [tan _Turn-On Time [seo f tse a | nee | Voo = 18V, Voon = 10V tor __Turn-Off Time [ [eo] | [60] 10 | Ro = 250, Ru = 250 Note 1: Pulse Test 80y Sec, 1% Duty Cycle . eee 3-145