VN20AN

VN20AN STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

HIGH SIDE SMART POWER SOLID STATE RELAY n OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25oC n LOGIC LEVEL 5V COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE PROTECTION n OPEN DRAIN DIAGNOSTIC OUTPUT n FAST DEMAGNETIZATION OF INDUCTIVE LOAD

DESCRIPTION

The VN20AN is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The diagnostic output indicates an over temperature status. Fast turn-off of inductive load is achieved by negative (-18V) load voltage at turn-off. September 1994 BLOCK DIAGRAM TYPE V DSS R DS(on) IOUT VCC VN20AN 60 V 0.05 Ω 33 A 36 V PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN20AN PENTAWATT horizontal VN20AN (011Y) PENTAWATT in-line VN20AN (012Y)

Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage 60 V IOUT Output Current (cont.) 33 A IR Reverse Output current -33 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current (sink) ±10 mA VESD Electrostatic discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC1 0 0 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS VN20AN

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.25 oC/W oC/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase =2 5 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit V CC * Supply Voltage -40 oC<T j < 125 oC7 3 6 V R on On State Resistance I OUT =1 4A IOUT =2A V CC =3 0V T j= 125 oC 0.04 0.05 0.09 Ω Ω IS Supply Current Off State V CC =3 0V On State V CC =3 0V On State V CC =3 0V T j=1 2 5oC mA mA mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 14 A Resistive Load Input Rise Time < 0.1µ s 30 µs tr Rise Time Of Output Current IOUT = 14 A Resistive Load Input Rise Time < 0.1µ s 65 µs td(off) Turn-off Delay Time Of Output Current IOUT = 14 A Resistive Load Input Rise Time < 0.1µ s 65 µs tf Fall Time Of Output Current IOUT = 14 A Resistive Load Input Rise Time < 0.1µ s 25 µs (di/dt)on Turn-on Current Slope IOUT =1 4A 2 5 oC<T j <1 2 5oC IOUT =I OV 25 oC<T j <1 2 5oC 0.5 A/µs A/µs (di/dt)off Turn-off Current Slope IOUT =1 4A 2 5 oC<T j <1 2 5oC IOUT =I OV 25 oC<T j <1 2 5oC 1.5 A/µs A/µs VDEMAG Inductive Load Clamp Voltage IOUT =1 4A - 4 0 oC<T j <1 2 5oC -24 -18 -14 V LOGIC INPUT (-40oC ≤ Tj≤ 125 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V V IH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN =5V V IN =2V V IN =0 . 8V 2 5 250 600 300 µA µA µA V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A 5.5 6 -0.7 -0.3 V V VN20AN

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (-40 oC ≤ Tj≤ 125 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V ISTAT Status Leakage Current VSTA T =5V 1 0 µA V USD Under Voltage Shut Down 3.5 6 7 V V SCL Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A 5.5 6 -0.7 -0.3 V V IOV Over Current R LOAD <1 0m Ω 80 A Iav Average Current In Short Circuit R LOAD <1 0m Ω Tc =8 5 oC2 . 5 A IDOFF Leakage Current V CC =3 0V 1 m A TTSD Thermal Shut-down Temperature 140 oC TR Reset Temperature 125 oC (*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltagevia an external resistor calculated to not exceed 10 mA at the input pin. TRUTH TABLE INPUT DIAGNOSTIC OUTPUT Normal Operation L H H H L H Over-temperature H L L Under-voltage X H L WAVEFORMS VN20AN

The device has a diagnistic output which indicates over temperature conditions. The truth table shows input, diagnostic output status and output voltage level in normal operation and fault conditions. The output signals are processed by internal logic. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125oC the switch is automatically turned on again. To ensure the protection in all V CC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 28V accordinf to: V ds =V CC -IOV *( Ri+R w +R l) where: R i= internal resistence of Power Supply R w = Wires resistance R l= Short Circuit resistance Driving inductive loads, an internal function of the device ensures the fast demagnetization with typical voltage (Vdemag ) of -18V. This function allows the reduction of the power dissipation according to the formula: Pdem = 0.5 * Lload*( Iload)2 * [(VCC +V dem )/Vdem ]*f where f = Switcning Frequency Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. PROTECTING THE DEVICE AGAINST REVER- SE BATTERY The simpliest way to protect the device against a continuous reverse battery voltage (-36V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Fig. 3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -V f is seen by the device. (Vil,V ih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shut-down level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of V ih,V iland Vstat. This solution allows the use of a standard diode. Over Current Test Circuit VN20AN

Typical Application Circuit With Separate Signal Ground Typical Application Circuit With A Schottky Diode For Reverse Supply Protection VN20AN

R DS(on) vs Junction Temperature R DS(on) vs Supply Voltage R DS(on) vs Output Current Input voltages vs Junction Temperature Output Current Derating VN20AN

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 L3L5 Dia. A C D E F G L MM 1 P010E Pentawatt (vertical) MECHANICAL DATA VN20AN

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F Pentawatt (horizontal) MECHANICAL DATA VN20AN

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010D Pentawatt (In- Line) MECHANICAL DATA VN20AN

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A VN20AN