VN16B

VN16B STMICROELECTRONICS | Alldatasheet

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ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA September 1994 BLOCK DIAGRAM TYPE V DSS R DS(on) In(*) V CC VN16B 40 V 0.06 Ω 5.6 A 26 V PENTAWATT (vertical) (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) (#) The maximum continuous output current is the current at Tc =8 5 oC for a battery voltage of 13 V which does not activate self protection n MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 20 A @ Tc=8 5oC n 5V LOGIC LEVEL COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE PROTECTION n OPEN DRAIN DIAGNOSTIC OUTPUT n INDUCTIVE LOAD FAST DEMAGNETIZATION n VERY LOW STAND-BY POWER DISSIPATION

DESCRIPTION

The VN16B is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to V CC and overtemperature. Fast demagnetization of inductive loads is archieved by negative (-18V) load voltage at turn-off. PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN16B PENTAWATT horizontal VN16B (011Y) PENTAWATT in-line VN16B (012Y)

Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage 40 V IOUT Output Current (cont.) at Tc =8 5 oC2 0 A IOU T(RMS) RMS Output Current at Tc =8 5 oC2 0 A IR Reverse Output Current at Tc =8 5 oC (f > 1Hz) -20 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA VESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc =2 5 oC8 2 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS VN16B

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40≤ Tj≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 6 13 26 V In(*) Nominal Current T c =8 5 oCV DS(on) ≤ 0.5 V CC =1 3V 5 . 6 8 . 8 A R on On State Resistance I OUT =I n V CC =1 3V T j =2 5 oC 0.038 0.06 Ω IS Supply Current Off State V CC =1 3V T j ≥ 25 oC2 5 5 0 µA V DS(MAX) Maximum Voltage Drop I OUT =2 0A V CC =1 3V T c =8 5 oC1 1 . 8 V R i Output to GND Internal Impedance T j=2 5 oC5 1 0 2 0 K Ω SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on)(^) Turn-on Delay Time Of Output Current R load =1 . 6Ω 5 50 500 µs tr(^) Rise Time Of Output Current R load =1 . 6Ω 40 100 680 µs td(off)(^) Turn-off Delay Time Of Output Current R load =1 . 6Ω 10 100 500 µs tf(^) Fall Time Of Output Current R load =1 . 6Ω 40 100 680 µs (di/dt)on Turn-on Current Slope R load =1 . 6Ω VCC = 13 V 0.008 0.1 A/ µs (di/dt)off Turn-off Current Slope Rload =1 . 6Ω VCC = 13 V 0.008 0.1 A/ µs V demag Inductive Load Clamp Voltage R load =1 . 6Ω L = 1 mH -24 -18 -14 V LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 1.5 V V IH Input High Level Voltage 3.5 ( •)V V I(hyst.) Input Hysteresis Voltage 0.2 1 1.5 V IIN Input Current V IN =5V T j =2 5 oC 100 µA V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A -0.7 V VN16B

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V V USD Under Voltage Shut Down 3.5 5 6 V V SCL Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A -0.7 V TTSD Thermal Shut-down Temperature 140 160 180 oC T SD( hys t.)Thermal Shut-down Hysteresis 15 50 oC TR Reset Temperature 125 oC V OL Open Voltage Level Off-State (note 2) 2.5 3.8 5 V IOL Open Load Current Level On-State 0.15 0.85 A tpovl Status Delay (note 3) 5 10 µs tpol Status Delay (note 3) 50 400 2500 µs (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) (^) See Switchig Time Waveforms (•)T h eVIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1: The Nominal Current is the current at Tc =8 5 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL(off) =( VCC -VOL )/ROL (see figure) note 3: tpo vltpol: ISO definition (see figure) Note 2 Relevant Figure Note 3 Relevant Figure VN16B

The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to V CC . From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (V demag ) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem =0 . 5• Lload• (Iloa d)2 • [(VCC +Vdem ag)/Vdemag]• f where f = switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed V CC ,V demag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, it will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -V f is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). – The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of V ih,V iland Vstat. This solution allows the use of a standard diode. Switching Time Waveforms VN16B

H L H H H Over-temperature X L L Under-voltage X L H Short load to VCC H L H H L L Open Load H L H L L L( # ) (#) With an additional external resistor Figure 1:Waveforms VN16B

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 L3L5 Dia. A C D E F G L MM 1 P010E Pentawatt (vertical) MECHANICAL DATA VN16B

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F Pentawatt (horizontal) MECHANICAL DATA VN16B

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010D Pentawatt (In- Line) MECHANICAL DATA VN16B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A VN16B