VN1206N5 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor VN1206N5
- FEATURES
- WithTO-220 packaging
- Highspeed switching
- Lowgateinputresistance
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 9 A IDM DrainCurrent-SinglePulsed 35 A PD TotalDissipation 45 W Tj OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.75 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 70 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor VN1206N5 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=10mA 60 V VGS(th) GateThresholdVoltage VDS=VGS;ID=10mA 0.8 2.4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=2A 220 450 mΩ IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V;Tj=25℃ 100 μA VSDF Diodeforwardvoltage ISD=10A,VGS =0V 1.4 V