VN1206L

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Document Number: 70227 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 N-Channel 120-V (D-S) MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083/C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083/C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 3.8 /C0087 /C0068Low Threshold: 1.4 V /C0068Low Input Capacitance: 35 pF /C0068Fast Switching Speed: 10 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068Easily Driven Without Buffer /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays Top View TO-226AA (TO-92) S D G VN1206L Device Marking Front View “S” VN 1206L xxyy x o e “S” = Siliconix Logo xxyy = Date Code /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Limits Unit Drain-Source Voltage VDS 120 Gate-Source Voltage VGS /C003430 V Continuous Drain Current TA= 25/C0095C 0.23Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.15 A Pulsed Drain Currenta IDM 2 TA= 25/C0095C 0.8 Power Dissipation TA= 100/C0095C PD 0.32 W Thermal Resistance, Junction-to-Ambient R thJA 156 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

www.vishay.com 11-2 Document Number: 70227 S-04279— Rev. E, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits Parameter Symbol Test Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 /C0109A 120 145 VDS = VGS , ID = 250 /C0109A 1.4 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA 0.8 1.5 2 VDS = 0 V, VGS = /C003415 V /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 nAGSS VDS = 0 V, VGS = /C003420 V VDS = 96 V, VGS = 0 V TJ = 125/C0095C /C0109Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V 10 /C0109A TJ = 125/C0095C 500 VDS = 10 V, VGS = 4.5 V 0.6 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 1.6 A VGS = 2.5 V, ID = 0.1 A 6 10 VGS = 3.5 V, ID = 0.1 A 4.5 VGS = 10 V, ID = 0.3 A 3.3 Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.2 A 3.8 /C0087DS(on) TJ = 125/C0095C 7.6 VGS = 10 V, ID = 0.5 A 3.3 6 TJ = 125/C0095C 7 14.8 VDS = 10 V, ID = 0.2 A 400 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 300 425 mS Common Source Output Conductanceb gos VDS = 7.5 V, ID = 0.1 A 0.4 Dynamic Input Capacitance C iss 35 125 Output Capacitance C oss VDS = 25 V, VGS = 0 V f = 1 MHz 15 50 pF Reverse Transfer Capacitance C rss f = 1 MHz 2 20 Switchingc tON 6 Turn-On Time td(on) 3 8 tr VDD = 60 V, RL = 150 /C0087 /C0094 3 8 tOFF ID /C0094 0.4 A, VGEN = 10 V R G = 25 /C0087 10 ns Turn-Off Time td(off) R G = 25 /C0087 7 18 tf 2.5 12 Notes a. For DESIGN AID ONLY, not subject to production testing.. VNDQ12 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

Document Number: 70227 S-04279— Rev. E, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 1000 0123 4 5 800 600 400 200 6 V 4 V 3 V 2 V VGS = 10 V 200 160 120 VGS = 3.0 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V 1.6 V 2.8 V 500 400 300 01 5 200 100 23 4 125/C0095C 25/C0095C TJ = –55/C0095C 5.0 4.5 4.0 2.5 0 0.2 1.0 3.5 3.0 0.4 0.6 0.8 VGS = 10 V 6.0 02 0 5.5 5.0 4.5 2.5 4.0 3.5 3.0 ID = 0.1 A 0.5 A 0.25 A 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 0.1 A ID = 0.5 AVGS = 10 V VDS = 10 V ID – Drain Current (mA) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

www.vishay.com 11-4 Document Number: 70227 S-04279— Rev. E, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 10 100 1000 100 VDD = 25 V R G = 25 /C0087 VGS = 0 to 10 V 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) td(on) td(off) tr tf 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM 0.01 0 0.5 0.1 1 1.5 2 –55/C0095C 25/C0095C TJ = 150/C0095C 120 100 01 0 5 0 20 30 40 C rss C iss C oss 0 120 600 240 360 480 96 V ID = 0.5 A VDS = 60 V VDS = 15 V VGS = 0 V f = 1 MHz ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)