VN10LF ZETEX | Alldatasheet
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Technical content
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JANUARY 1996
FEATURES
- 60 Volt V DS *R DS(on)=5Ω PARTMARKING DETAIL – MY ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C I D 150 mA Pulsed Drain Current I DM 3A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb = 25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 V ID=100 µA, V GS=0V Gate-Source Breakdown Voltage VGS(th) 0.8 2.5 V I D=1mA, V DS= VGS Gate Body Leakage I GSS 100 nA VGS=± 20V, V DS=0V Zero Gate Voltage Drain Current (1) IDSS 10 µ A VDS=60 V, V GS=0V On State Drain Current(1) ID(on) 750 mA V DS=15 V, V GS=10V Static Drain Source On State Resistance (1) RDS(on) 5.0 7.5 Ω Ω VGS=10V, I D=500mA VGS=5V, I D=200mA Forward Transconductance (1)(2) g fs 100 mS V DS=15V, I D=500mA Input Capacitance (2) C iss 60 pF Common Source Output Capacitance (2) Coss 25 pF V DS=25 V, V GS=0V f=1MHz Reverse Transfer Capacitance (2) Crss 5p F Turn-On Time (2)(3) t (on) 31 0 n s VDD ≈15V, I D=600mATurn-Off Time (2)(3) t (off) 41 0 n s (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device For typical characteristics graphs see ZVN3306F datasheet. VN10LF D G S 3 - 308