VN10KN ETC2 | Alldatasheet
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Technical content
TOPAZ SEMICONDUCTOR OSE D | q08seeb 0001094 0 I T-29-25 eee N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs
ORDERING INFORMATION
TO-92 Plastic Package VN10KN3 Description 60V, 5 ohm FEATURES APPLICATIONS II High Gate Oxide Breakdown, +40V min. Mf High-Speed Pulse Amplifiers
1 Low Output and Transfer Capacitances Logic Butters
Extended Sate Operating Area BH Line Drivers lH Solid-State Relays & Motor Controls
1 Power Supplies
ABSOLUTE MAXIMUM RATINGS (T, = +25°C unless otherwise noted) Ta=+25°C To = +25°C near Derating F: Continuous Drain Current 24 a0.) mwrc Ta=25°C To = 25°C “ “
24 B24 Operating Junction
Lead Temperature (1/16" from mounting SCHEMATIC DIAGRAM/PACKAGE PACKAGE DIMENSIONS (10-92) TO-226AA kage 5) 10.92 (See Package 5) Drain an Gate + | Source $¢ D een 342 0-88-6
TOPAZ SEMICONDUCTOR OSE D i 9085226 O0o1,099 1 I CC — ——— T-29-25 . WIA Z : VN10KN SEMICONDUCTOR ‘ pa ELECTRICAL CHARACTERISTICS (1, = +25°C unless otherwise noted) ‘ || CHARACTERISTIC a UNIT TEST CONDITIONS BVoss Drain-Source v lo = 100uA, Ves = 0 Breakdown Voltage Voswm Gate-Source v lp = 1.0MA, Vos = Vas Threshold Voltage loss Gate-Body £1.0 +100 nA Vos = +15V, Vos = 0 Leakage Current OP aia ae ee Ves = 0 | 6 | Tow ONDrainCurrent | 025 | | «| ~SA | Ves=8v,_| Vos=t0v Se Vos=10V_| (Note 1) Vosiew Drain-Source v Vos = 10V, Ip = 0.54. ‘ON Voltage (Note 1) | 9 | Drain-Source | [| | s | ohms | Vos=10V, lo=0.5A (Note 1) Tost ON Resistance a ee or an Q» Common-Source Vos = 10V, lp = 0.5A Forward Transcond. f=1KHz_ (Note 1) Gs: Common-Source Input Capacitance
13 Cas Common-Source 13 PF | Vos = 16V, Ves = 0
Reverse Transfer f=1MHz Capacitance Coss | Common-Source 10.5 . Output Capacitance [5] [ee Turn-On Time pf see nae | Voo = Vaeu = 10 [16] [tr Tunontime | | 60 | 0 | fo = 250, Fu =250 Note 1: Pulse Test 804 Sec, 1% Duty Cycle 3-143