VN0610LL ETC | Alldatasheet

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TOPAZ SEMICONDUCTOR OSE D i 9085226 OOO1L0%b & | a THe) VL, VNGSIOLL, SEMICONDUCTOR oO «TH 29-25 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

ORDERING INFORMATION

™ High Gate Oxide Breakdown, +40V min. @ High-Speed Pulse Amplifiers

1 Low Output and Transfer Capacitances 1 Logic Butters

lM Extended Safe Operating Area @ Line Drivers @ Solid-State Relays Motor Controls @ Power Supplies ABSOLUTE MAXIMUM RATINGS (T, = +25°C unless otherwise noted) Ta = +25°C Te = +25°C Continuous Drain Current 24 80 WIC Ta = 25°C Te = 25°C “ m VNO610LL .18A 832A Operating Junction SCHEMATIC DIAGRAM/PACKAGE PACKAGE DIMENSIONS (10-92) TO-226AA (See Package 5) Drain Gato at Sq oO Source EEE EEE ERED 3-140 0-88-6

TOPAZ SEMICONDUCTOR OSE D ff aoas22b Ooo1097 8 I ; ga ZAVZ4 VNOS40LL, VN22221L SEMICONDUCTOR ‘ ELECTRICAL CHARACTERISTICS (1, = +25°C unless otherwise noted) , VNOS10LL VN2222LL CHARACTERISTICS UNIT | TEST CONDITIONS [+] crmorenenes Fe ae 1 BVoss Drain-Source . v Ip = 100uA, Ves = 0 Breakdown Voltage Vesws Gate-Source v Ip = 1.0mA, Vos = Vos Threshold Voltage Ices Gate-Body £1.0]+100) £1.0/+100) Vas = +30V, Vos = 0 Leakage Current | 4] loss Drain-Source OFF | [oj] [or] | uA — | Vos = 48V, Vos = 0 Leakage Current lows ON Drain Current | 4.0 Vos = 10V, Vas = 10V (Note 1) 7 Vostoa Drain-Source 1.5 Vv Vos = 5V, Ip = 0.2A ON Voltage (Note 1) | 3 | a Vos = 10V, lo=0.5A (Note 1) | 2 | [|_[4s[7s| [4s | 75 | Vos=8V, 1p=0.2A (Note 1) Drain-Source 75 Ves = 10V, In =0.5A (Note 1) Tos ON Resistance 12 On Common-Source 100 Vos = 10V, In = 0.5A Forward Transcond. f=1KHz (Note 1) Cm Common-Source Input Capacitance .

14 Cras Common-Source Vos = 15V, Vas = 0

Reverse Transfer f= 1MHz Capacitance Coss Common-Source Output Capacitance ten __Turn-On Time [ [sol | [so] 10 | Voo = 15V, Veron = 10V [ty tun-ontime | feol w{ [6o| 10 | Ro = 250, Ru = 250. Note 1: Pulse Test 80 Sec, 1% Duty Cycle SSS 3141