VN0610L

VN10KLS VISHAY | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 4

Technical content

VN0610L, VN10KLS, VN2222L Vishay Siliconix Document Number: 70213 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 N-Channel 60-V (D-S) MOSFETs with Zener Gate /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Zener Diode Input Protected /C0068Low On-Resistance: 3 /C0087 /C0068Ultralow Threshold: 1.2 V /C0068Low Input Capacitance: 38 pF /C0068Low Input and Output Leakage /C0068Extra ESD Protection /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068High-Speed, Easily Driven /C0068Low Error Voltage /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays /C0068Inductive Load Drivers TO-92S Top View S D G 2 TO-226AA (TO-92) Top View S D G 2 VN10KLSVN0610L VN2222L Device Marking Front View “S” VN 0610L xxyy Device Marking Front View “S” = Siliconix Logo xxyy = Date Code “S” VN 2222L xxyy Device Marking Front View “S” VN 10KLS xxyy “S” = Siliconix Logo xxyy = Date Code VN0610L VN2222L VN10KLS /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol VN2222L VN0610L VN10KLS Unit Drain-Source Voltage VDS 60 60 Gate-Source Voltage VGS 15/–0.3 15/–0.3 V /C0095 TA= 25/C0095C 0.27 0.31 Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.17 0.20 A Pulsed Drain Currenta IDM 1 1.0 TA= 25/C0095C 0.8 0.9 Power Dissipation TA= 100/C0095C PD 0.32 0.4 W Thermal Resistance, Junction-to-Ambient R thJA 156 139 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

VN0610L, VN10KLS, VN2222L Vishay Siliconix www.vishay.com 11-2 Document Number: 70213 S-04279— Rev. F, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VN0610L VN10KLS VN2222L Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 /C0109A 120 60 60 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 15 V 1 100 100 nA VDS = 48 V, VGS = 0 V 10 10 /C0109Zero Gate Voltage Drain Current IDSS TJ = 125/C0095C 500 500 /C0109A On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.75 0.75 A VGS = 5 V, ID = 0.2 A 4 7.5 7.5 Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A 3 5 7.5 /C0087 TJ = 125/C0095C 5.6 9 13.5 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 300 100 100 Common Source Output Conductanceb gos VDS = 7.5 V, ID = 0.05 A 0.2 mS Dynamic Input Capacitance C iss 38 60 60 Output Capacitance C oss VDS = 25 V, VGS = 0 V, f = 1 MHz 16 25 25 pF Reverse Transfer Capacitance C rss 2 5 5 Switchingc Turn-On Time tON VDD = 15 V, RL = 23 /C0087 /C0094 7 10 10 Turn-Off Time tOFF ID /C0094 0.6 A, VGEN = 10 V R G = 25 /C0087 9 10 10 ns Notes a. For DESIGN AID ONLY, not subject to production testing. VNDP06 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

VN0610L, VN10KLS, VN2222L Vishay Siliconix Document Number: 70213 S-04279— Rev. F, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 1.0 0123 4 5 0.8 0.6 0.4 0.2 6 V 4 V 5 V 2 V 3 V 1.9 V 1.8 V 1.6 V 1.5 V 1.2 V 1.4 V 0.5 0.4 0.3 01 5 0.2 0.1 23 4 125/C0095C TJ = –55/C0095C 0 0.2 1.0 0.4 0.6 0.8 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 0.1 A 0 4 8 12 16 20 250 mA 500 mA VGS = 2.0 V VGS = 10 V VDS = 15 V ID = 50 mA VGS = 10 V VGS = 10 V ID = 0.5 A 25/C0095C ID – Drain Current (mA) ID – Drain Current (A) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

VN0610L, VN10KLS, VN2222L Vishay Siliconix www.vishay.com 11-4 Document Number: 70213 S-04279— Rev. F, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0.1 0.5 1.0 100 VDD = 15 V R L = 25 /C0087 VGS = 0 to 10 V Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) td(on) td(off) tr tf 0.01 0 0.25 1.75 0.1 100/C0095C 25/C0095C –55/C0095C 0/C0095C TJ = 150/C0095C 100 01 0 5 0 20 30 40 15.0 12.5 10.0 0 100 600 7.5 5.0 200 300 400 2.5 500 VDS = 30 V 48 V 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM ID = 0.5 A VGS = 0 V f = 1 MHz C iss C oss C rss ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)