VN0605T

VN10LLS VISHAY | Alldatasheet

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VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix Document Number: 70212 S-04279—Rev. G, 16-Jul-01 www.vishay.com 11-1 N-Channel 60-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 VN0610LL 60 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 2.5 /C0087 /C0068Low Threshold: <2.1 V /C0068Low Input Capacitance: 22 pF /C0068Fast Switching Speed: 7 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068Easily Driven Without Buffering /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Direct Logic-Level Interface: TTL/CMOS /C0068Solid State Relays /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems VN0605T TO-92S Top View S D G TO-226AA (TO-92) Top View S D G G TO-236 (SOT-23) S D Top View VN10LLS VN0610LL VN2222LL VN0610LL “S” VN0 610LL xxyy Front View VN2222LL “S” VN2 222LL xxyy “S” = Siliconix Logo xxyy = Date Code Front View “S” = Siliconix Logo xxyy = Date Code VN10LLS “S” VN 10LLS xxyy V2wll VN0605T V2 = Part Number Code for VN0605T w = Week Code ll = Lot Traceability /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol VN10LLS VN0605T VN0610LL VN2222LL Unit Drain-Source Voltage VDS 60 60 60 60 Gate-Source Voltage—Non-Repetitiveb VGSM /C003430 /C003430 /C003430 /C003430 V Gate-Source Voltage—Continuous VGS /C003420 /C003420 /C003420 /C003420 Continuous Drain Current TA= 25/C0095C 0.32 0.18 0.28 0.23Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.2 0.11 0.17 0.14 A Pulsed Drain Currenta IDM 1.4 0.72 1.3 1.0 TA= 25/C0095C 0.9 0.36 0.8 0.8 Power Dissipation TA= 100/C0095C PD 0.4 0.14 0.32 0.32 W Thermal Resistance, Junction-to-Ambient R thJA 139 350 156 156 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. b. tp /C0118 50 /C0109s.

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix www.vishay.com 11-2 Document Number: 70212 S-04279— Rev. G, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VN10LLS VN0610LL VN0605T VN2222LL Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Drain-Source VGS = 0 V, ID = 100 /C0109A 70 60 60Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 70 60 V VDS = 0 V, VGS = /C003420 V /C0034100 /C0034100 Gate-Body Leakage IGSS TJ=125/C0095C /C0034500 nA VDS = 0 V, VGS = /C003430 V /C0034100 VDS = 50 V, VGS = 0 V 10 1.0 Zero Gate-Voltage TJ= 125/C0095C 500 500 /C0109Zero Gate-Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 10 /C0109A TJ= 125/C0095C 500 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1000 750 500 750 mA VGS = 4.5 V, ID = 50 mA 4.5 7.5 Drain-Source VGS = 5 V, ID = 0.2 A 4.5 7.5 7.5 /C0087Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A 2.4 5 5 7.5 /C0087 TJ= 125/C0095C 4.4 9 10 13.5 Forward VDS = 10 V, ID = 0.5 A 230 100 100Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A 180 80 mS Common Source Output Conductance b gos VDS = 5 V, ID = 50 mA 500 /C0109s Dynamic Input Capacitance C iss 22 60 60 60 Output Capacitance C oss VDS =25 V, VGS = 0 V 11 25 25 25 pF Reverse Transfer Capacitance C rss f = 1 MHz 2 5 5 5 pF Switchingc Turn-On Time tON VDD = 15 V, RL = 23 /C0087, ID /C0094 0.6 A 7 10 10 Turn-Off Time tOFF VDD = 15 V, RL = 23 /C0087, ID /C0094 0.6 A VGEN = 10 V, RG = 25 /C0087 7 10 10 Turn-On Time tON VDD = 30 V, RL = 150 /C0087, ID /C0094 0.2 A 7 20 ns Turn-Off Time tOFF VDD = 30 V, RL = 150 /C0087, ID /C0094 0.2 A VGEN = 10 V, RG = 25 /C0087 11 20 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. VNBF06 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%. c. Switching time is essentially independent of operating temperature.

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix Document Number: 70212 S-04279— Rev. G, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0.0 0.2 0.4 0.6 0.8 1.0 0123456 0.0 0.2 0.4 0.6 0.8 1.0 0123456 Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS = 10, 9, 8, 7 V 6.5 V VGS – Gate-to-Source Voltage (V) TJ = –55/C0095C 125/C0095C 6 V 5.5 V 5 V 4.5 V 4 V 3.5 V 3 V 2.5 V 2, 1 V 25/C0095C 0 400 800 1200 1600 2000 2400 0.0 0.5 1.0 1.5 2.0 –55 –30 –5 20 45 70 95 120 145 0 5 10 15 20 25 30 Gate Charge On-Resistance vs. Drain Current Q g – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) C rss C oss C iss VDS = 30 V ID = 0.5 A ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 10 V, rDS @ 0.5 A TJ – Junction Temperature (/C0095C) rDS @ 10 V = VGS rDS @ 5 V = VGS TJ = 25/C0095C VGS = 5 V, rDS @ 0.05 A VGS = 0 V f = 1 MHz ID – Drain Current (A) ID – Drain Current (A)C – Capacitance (pF) rDS(on) – On-Resistance ( Ω )VGS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) (Normalized)

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix www.vishay.com 11-4 Document Number: 70212 S-04279— Rev. G, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0.001 0.010 0.100 1.000 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) 0 2 4 6 8 1 01 21 41 61 82 0 500 mA ID = 50 mA TJ = 125/C0095C TJ = 25/C0095C Threshold Voltage TJ – Junction Temperature (/C0095C) –0.75 –0.50 –0.25 –0.00 0.25 0.50 –50 –25 0 25 50 75 100 125 150 ID = 250 /C0109A 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM IS – Source Current (A) rDS(on) – On-Resistance ( Ω ) VGS(th) – Variance (V)