VN05NSP STMICROELECTRONICS | Alldatasheet

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HIGH SIDE SMART POWER SOLID STATE RELAY June 1998 BLOCK DIAGRAM TYPE V DSS R DS(on) IOUT V CC VN05NSP 60 V 0.18 Ω 13 A 26 V n OUTPUT CURRENT (CONTINUOUS):

13 A @ Tc=25oC

n 5 V LOGIC LEVEL COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE SHUT-DOWN n OPEN DRAIN DIAGNOSTIC OUTPUT n VERY LOW STAND-BY POWER DISSIPATION

DESCRIPTION

The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PowerSO-10

Symbol Parameter Value Unit V (BR)DSS Drain-Source Breakdown Voltage 60 V IOUT Output Current (cont.) 13 A IR Reverse Output Current -13 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA V ESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC5 6 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VN05NSP

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient ($) Max 2.2 oC/W oC/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40≤ Tj≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 7 26 V R on On State Resistance I OUT =6A IOUT =6A T j =2 5 oC 0.36 0.18 Ω Ω IS Supply Current Off State T j ≥ 25 oC On State µ A mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 15 µ s tr Rise Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 30 µ s td(off) Turn-off Delay Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 20 µ s tf Fall Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 10 µ s (di/dt)on Turn-on Current Slope IOUT =6A IOUT =I OV 0.5 A/µ s A/µ s (di/dt)off Turn-off Current Slope IOUT =6A IOUT =I OV A/µ s A/µ s LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V VIH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN = 5 V 250 500 µ A V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A -0.7 V V PROTECTIONS AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT (•) Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V V USD Under Voltage Shut Down 6.5 V VN05NSP

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit V SCL (•) Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A -0.7 V V tSC Switch-off Time in Short Circuit Condition at Start-Up R LOAD <1 0m Ω Tc =2 5 oC1 . 5 5 m s IOV Over Current R LOAD <1 0m Ω -40 Tc 125 oC6 0 A IAV Average Current in Short Circuit R LOAD <1 0m Ω Tc =8 5 oC1 . 4 A IOL Open Load Current Level 51 8 0 m A TTSD Thermal Shut-down Temperature 140 oC TR Reset Temperature 125 oC (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100µs after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,V IH thresholds and VSTAT are increased by VF with respect to power GND). The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of V IH,V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN05NSP

RDS(on) vs Junction Temperature RDS(on) Vs Output Current Output Current Derating R DS(on) Vs Supply Voltage Input Voltage vs Junction Temperature Open Load vs Junction Temperature VN05NSP

DIM. mm inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h 0.50 0.002 L 1.20 1.80 0.047 0.071 q 1.70 0.067 α 0 o 8o DETAIL ”A” PLANE SEA TING α L F h A D D1== 0.10 A E1E3 C Q A B B DETAIL ”A” SEATING PLANE 610 eB HE M0.25 0068039-C PowerSO-10 MECHANICAL DATA VN05NSP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademarkof STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France- Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom- U.S.A. VN05NSP