VN0300 ETC1 | Alldatasheet
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ZL] — (> . _. VN0300 SERIES SO KS $F Siliconix N-Channel Enhancement-Mode MOS Transistors weveweer—r—erreeee SE TO-92 (TO-226AA) | BOTTOM VIEW PRODUCT SUMMARY PART | Vieryoss |fosion) | 'p numeeR | “(W) rat 1 (a) | PACKAGE Performance Curves: VNDQO3 3 10-237 BOTTOM VIEW
1 SOURCE
3 & TAB-DRAIN ABSOLUTE MAXIMUM RATINGS (Ta = 25°C Unless Otherwise Noted) En pee fee Er es ers Operating Junction & Storage Temperature Range [tuts | stots °c THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL | vwosoot | —vnozoom | UNITS Panaomoanbere Ce Pe ‘Pulse width limited by maximum junction temperature 6-64 Rev. A (02/11/91
SPECIFICATIONS? LIMITS [stare foesamamconwan wen [beta T@ T=] ]¥ Gate-Threshold Votage | vesm [Vos = Vos o=tma | 15 [ 08 | 25 | A Zero Gate Voltage Drain Current Vos = 30V, Ves = OV | | [| A Tarsre [fo | [Onsen Gene | eae [esse por 80 98K fea Drain-Source On-Resistance® rosion) poss [ [12] o oi a [Fewer Tarsconaueane® [fee OSA ao fae Ts Coron Sours Copa conaarer | tee | ves=venora [emf fs | [orNAMIG P=] = =0V [et T=] [swircHING Voo = 25V. Ry = 242, lp = 1A On Ti Tum-On Time ton Veeun 10V. Re = 20 (Switching time fs essentially indepen- |- Tum-Oft Time torr dent of operating temperature) bid NOTES. a. Ta = 25°C unless otherwise noted. b. For design aid only, not subject to production testing. c. Pulse test; PW = < 300 US, duty cycle < 2%. TE EEEEEIEEE EES SS Rev. A (02/11/91) le a 66S ay
Bs Sanh) VNDQO3 N-Channel Enhancement-Mode MOSFETs a Single TO-92 (TO-226AA) @ —VNO3OOL, TNO201L, TNO401L Single TO-237 VNO300M Single 14-Pin Plastic e = VQ1001J Quad 14-Pin Dualin-Line e@ vQi001P Quad Chip e Available as VNDQ1CHP I TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Orive Ohmic Region Characteristics 200 2.0 IT ay oe
160 Pi 1s hf [Lier
4802.22 PT VAT} ttt
wt JAZ 1.2 PT PAA sy Ip LY es I » —-AY4ooo a wa WEEE TTT] os PA Tt DAT] S/4nneeee o{ Peas errr wi wot ttt ti ) <4 ) 4gneanenexs ce cee ex Vos (¥) Vos (V) . On-Resistance Transter Characteristics 2.5 500 TT] TE iar ee ros 1.5 wy lo 300 4 (a) _ (mA) A ree} LY P| vine ne es 0 0 Za C) 1 2 3 4 5 C) 1 2 3 4 5 Ip (A) Vas (VY) i __Ravioed (02/11/01) 6-175 i ---zmssssnssrsssesnesst
- VNDQO3 $F Sion incorporate Se TYPICAL CHARACTERISTICS (Cont'd) Aaa Normalized On-Resistance vs. Junction Temperature Capacitance 225 120 met t] “~Py
2.00 Ves =0V
100 #1 MHz Ip=05AA 175 \\ | ft | ° 1.50 i . A ee nom;as| |_| LAF wo 1.25 L 1.00 i SSEES# | Sess 0.75 <4 20 I See | S| 0 50 0 -50 -10 30 70 «110 = 150 0 10 20 3040 50 Ts °C) - Vos (V) _ Threshold Region On-Resistance vs. Gate to Source Voltage
10 SSS
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(mA) or oe oe (2) \\ Nv ow LLL A PONCE >_> == 1 <r SS oo, LLL ST VY iF cj} | ° Vas (Y) Ves (VY) Normalized Effective Transient Thermal impedance, Junction-to-Ambient (TO-92) ee rrr Moon cysts 0s Pee eo | Outy Cycle = 9.5 Se err EE a Se SS Se eet TTT TE TTT ane N a a a le (Norm.) 9-1 Ss a eS ase ss SSS SSS SSeS oo os th <a ro L" te =] - CA CT er +. Duty F pet Roe TTT TTT + Outs Factor. 0 = = Sintie Pulse 2. Per Unit Base = Rinjs = 156 K/W 3. Tum - Ta = PomZtnaity ot oF os 1 5 10 50 100 500 1K 5K 10K tr (sec) ——— eee 6-176 Revised (02/11/91)
TYPICAL CHARACTERISTICS (Cont'd) Drive Resistance Effects on Switching Load Condition Effects on Switching EE Vo = 259 FE Veo = 250 ql ——— = eer E—T—T ets ag= 252 i" IT v5 = 0 to 10 Fret yo oic ov U ; Ip=1A Cry “ss I] ae YT TT TT — LL O, L (ns) 10 ee tor (ns) 10 FREES teorn EEE SSSSieSSSsr [fey SSSA Fee Ee Sect Cr [ttt | Ti Tt TT se (TI TT 10 so 100 o1 1 10 Re (A) 1p (A) Gate Charge Transconductance 6 500 5 Sell] “RETF | ee “Te ea Ves 3 L2 Grs ra 200 Lf so fF guise Test, 80 is O Lt) 80 160 240 320 400 °O 100 200 300 400 500 Q, (pc) Ip (mA) a Revised (02/11/91) 6177 enn nnn EEE nsEEnsnsnanssesnsssssssnssnnsssasnsasnsasnsscesth