VN02H STMICROELECTRONICS | Alldatasheet

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HIGH SIDE SMART POWER SOLID STATE RELAY March 1999 BLOCK DIAGRAM TYPE V DSS R DS(on )I OUT V CC VN02H 60 V 0.4 Ω 6A 3 6V n OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC n 5V LOGIC LEVEL COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE SHUT-DOWN n OPEN DRAIN DIAGNOSTIC OUTPUT n VERY LOW STAND-BY POWER DISSIPATION

DESCRIPTION

The VN02H is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PENTAWATT (vertical) PENTAWATT (horizontal) ORDER CODES: PENTAWATT vertical VN02H PENTAWATT horizontal VN02H(011Y) PENTAWATT in-line VN02H(012Y) PENTAWATT (in-line)

Symbol Parameter Value Unit V (BR)DSS Drain-Source Breakdown Voltage 60 V IOUT Output Current (cont.) 6 A IR Reverse Output Current -6 A IIN Input Current ±10 mA VCC Supply Voltage (for t = 400 ms) 60 V -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA V ESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC2 8 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VN02H

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 4.4 oC/W oC/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40≤ Tj≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage see note 1 5 36 V R on On State Resistance I OUT =3A IOUT =3A T j =2 5 oC 0.8 0.4 Ω Ω IS Supply Current Off State T j ≥ 25 oC On State µ A mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 51 0 2 0 µ s tr Rise Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 51 5 4 5 µ s td(off) Turn-off Delay Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 51 5 3 0 µ s tf Fall Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ sT j =2 5 oC 26 1 5 µ s (di/dt)on Turn-on Current Slope IOUT =3A IOUT =I OV 25 ≤ Tj ≤ 140 oC 0.05 0.15 0.5 A/µ s A/µ s (di/dt)off Turn-off Current Slope IOUT =3A IOUT =I OV 25 ≤ Tj ≤ 140 oC 0.1 0.4 2 A/µ s A/µ s V demag Inductive Load Clamp Voltage IOUT = 3 A L = 1 mH -7 -4 -2 V LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V VIH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN = 5 V 250 500 µ A V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A 5.5 6 -0.7 -0.3 V V VN02H

ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT (•) Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V V USD Under Voltage Shut Down 2.5 5 V V SCL (•) Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A 5.5 6 -0.7 -0.3 V V tSC Switch-off Time in Short Circuit Condition at Start-Up R LOAD <1 0m Ω V CC =1 3V Tc =2 5 oC 1.5 5 ms IOV Over Current R LOAD <1 0m Ω V CC =1 3V 2 8 A IAV Average Current in Short Circuit R LOAD <1 0m Ω V CC =1 3V Tc =8 5 oC 0.9 1.8 A IOL Open Load Current Level 9< V CC <3 2V 5 7 0 m A IOUT Leakage Current Off State V OUT =0V 6 0 µ A TTSD Thermal Shut-down Temperature 140 160 oC TR Reset Temperature 125 145 oC (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100µs after the switching edge. Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140oC. When the temperature returns to about 125oC the switch is automatically turned on again. To ensur the protection in all V CC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above V CC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -V F is seen by the device. (VIL,V IH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by V If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of V IH,V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02H

DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 P010E PENTAWATT (VERTICAL) MECHANICAL DATA VN02H

DIM. mm inch MIN TYP MAX MIN TYP MAX A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.110 E 0.35 0.55 0.014 0.021 F 0.80 1.05 0.031 0.041 G 3.20 3.60 0.126 0.142 G1 6.60 7.00 0.260 0.275 H1 9.30 9.70 0.366 0.382 H2 10.40 0.409 H3 10.05 10.40 0.396 0.409 L2 14.60 15.20 0.575 0.598 L3 3.50 4.10 0.137 0.161 L5 2.60 3.00 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6.00 6.60 0.236 0.260 V4 90 o 90o PO1OL1_E PENTAWATT (HORIZONTAL) MECHANICAL DATA VN02H

DIM. mm inch MIN TYP MAX MIN TYP MAX A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.110 E 0.35 0.55 0.014 0.021 F 0.80 1.05 0.031 0.041 F2 1.10 1.40 0.043 0.055 F3 1.25 1.55 0.049 0.061 G 3.20 3.60 0.126 0.142 G1 6.60 7.00 0.260 0.275 H1 9.30 9.70 0.366 0.382 H2 10.40 0.409 H3 10.05 10.40 0.396 0.409 L2 23.05 23.80 0.907 0.937 L3 25.30 26.10 0.996 1.027 L4 0.90 2.90 0.035 0.114 L5 2.60 3.00 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6.00 6.60 0.236 0.260 V4 90 o 90o P010D PENTAWATT (IN-LINE) MECHANICAL DATA VN02H

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com VN02H