VN02AN STMICROELECTRONICS | Alldatasheet
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HIGH SIDE SMART POWER SOLID STATE RELAY July 1998 BLOCK DIAGRAM TYPE V DSS R DS(on )I OUT V CC VN02AN 60 V 0.35 Ω 7A 3 6V n OUTPUT CURRENT (CONTINUOUS): 7A @ Tc=25oC n LOGIC LEVEL 5V COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE PROTECTION n OPEN DRAIN DIAGNOSTIC OUTPUT n FAST DEMAGNETIZATION OF INDUCTIVE LOAD
DESCRIPTION
The VN02AN is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The diagnostic output indicates an over temperature status. Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off. PENTAWATT (vertical) PENTAWATT (horizontal) ORDER CODES: PENTAWATT vertical VN02AN PENTAWATT horizontal VN02AN(011Y) PENTAWATT in-line VN02AN(012Y) PENTAWATT (in-line)
Symbol Parameter Value Unit V (BR)DSS Drain-Source Breakdown Voltage 60 V IOUT Output Current (cont.) 7 A IR Reverse Output Current -7 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current (sink) ±10 mA V ESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC3 1 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VN02AN
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max oC/W oC/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase =2 5 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit V CC * Supply Voltage -40 oC<T j < 125 oC7 3 6 V R on On State Resistance I OUT =3A IOUT =1A V CC =3 0V T j=1 2 5o C 0.35 0.6 Ω Ω IS Supply Current Off State V CC =3 0V On State V CC =3 0V On State V CC =3 0V T j = 125 oC mA mA mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ s 15 µ s tr Rise Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ s 15 µ s td(off) Turn-off Delay Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ s 14 µ s tf Fall Time Of Output Current IOUT = 3 A Resistive Load Input Rise Time < 0.1µ s 4.5 µ s (di/dt)on Turn-on Current Slope IOUT =3A 2 5 oC<T j <1 2 5oC IOUT =I OV 25 oC<T j <1 2 5oC 0.5 A/µ s A/µ s (di/dt)off Turn-off Current Slope IOUT =3A 2 5 oC<T j <1 2 5oC IOUT =I OV 25 oC<T j <1 2 5oC 1.5 A/µ s A/µ s V DEMAG Inductive Load Clamp Voltage IOUT =3A - 4 0 oC<T j <1 2 5oC -24 -18 -14 V LOGIC INPUT (-40oC ≤ Tj≤ 125 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V VIH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN =5V V IN =2V V IN =0 . 8V 2 5 250 600 300 µ A µ A µ A V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A 5.5 6 -0.7 -0.3 V V VN02AN
ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (-40 oC ≤ Tj≤ 125 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 V ISTAT Status Leakage Current VSTAT =5V 1 0 µ A V USD Under Voltage Shut Down 3.5 6 7 V V SCL Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A 5.5 6 -0.7 -0.3 V V IOV Over Current R LOAD <1 0m Ω 15 A Iav Average Current In Short Circuit R LOAD <1 0m Ω Tc =8 5 oC0 . 6 A IDOFF Leakage Current V CC =3 0V 1 m A TTSD Thermal Shut-down Temperature 140 oC TR Reset Temperature 125 oC (*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. TRUTH TABLE INPUT DIAGNOSTIC OUTPUT Normal Operation L H H H L H Over-temperature H L L Under-voltage X H L Figure 1:Waveforms VN02AN
The device has a diagnostic output which indicates over temperature conditions. The truth table shows input, diagnostic output status and output voltage level in normal operation and fault conditions. The output signals are processed by internal logic. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125oC the switch is automatically turned on again. To ensure the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 28V according to: V ds =V CC -IOV *( Ri+R w +R l) where: R i= internal resistence of Power Supply R w = Wires resistance R l= Short Circuit resistance Driving inductive loads, an internal function of the device ensures the fast demagnetization with typical voltage (Vdemag ) of -18V. This function allows the reduction of the power dissipation according to the formula: Pdem = 0.5 * Lload*( Iload)2 * [(VCC +V dem )/Vdem ]*f where f = Switching Frequency Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. PROTECTING THE DEVICE AGAINST RE- VERSE BATTERY The simpliest way to protect the device against a continuous reverse battery voltage (-36V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Fig. 3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -V f is seen by the device. (Vil,V ih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shut-down level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of V ih,V il and Vstat. This solution allows the use of a standard diode. Figure 2:Over Current Test Circuit VN02AN
RDS(on) vs Junction Temperature RDS(on) vs Output Current Output Current Derating R DS(on) vs Supply Voltage Input Voltages vs Junction Temperature VN02AN
DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 P010E PENTAWATT (VERTICAL) MECHANICAL DATA VN02AN
DIM. mm inch A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F PENTAWATT (HORIZONTAL) MECHANICAL DATA VN02AN
DIM. mm inch MIN TYP MAX MIN TYP MAX A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 P010D PENTAWATT (IN-LINE) MECHANICAL DATA VN02AN
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademarkof STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France- Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom- U.S.A. VN02AN