VJSO16N ICHAUS | Alldatasheet
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iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 1/10
FEATURES
♦ Laser diode driver of up to 250 mA ♦ Averaging control of laser power ♦ Protective functions to prevent destruction of laser diode ♦ Laser-current monitor with current or voltage output ♦ Integrated RC oscillator up to 4 MHz ♦ Integrated 16:1 divider for pulse generation in the kHz range ♦ Stable 1:1 pulse duty ratio ♦ Simple adjustment of the laser power via external resistor ♦ Soft-start at power-on ♦ Complementary pulse repetition frequency output for ECL level ♦ Shutdown in case of overtemperature ♦ Single 5 V power supply ♦ Very few external components ♦ iC-VJfor laser diodes with 50 to 500 µA monitor current ♦ iC-VJZfor laser diodes with 0.15 to 1.5 mA monitor current
APPLICATIONS
♦ Transmitter for laser light barri- ers from 1 to 200 kHz PACKAGES SO16N BLOCK DIAGRAM DC−Monitor 5V Sync 6 5 3 4 7 1 Q NQ NQ OUTPUT MONITOR REFERENCE DIVIDER TH−SHUTDOWN POWER ON OSCILLATOR DRIVER 16:1 800Ω 100pF RSET 10kΩ 10kΩ 100nF..470nF 100nF 100 µF AGND AMD CI usable LD models MD LD iC−VJ/VJZ 1:1 iC−VJ 1:3 iC−VJZ MO MI VCC ISET 11 7 9 KLD GND R RC 6 5 PRF NPRF Copyright © 2006 iC-Haus http://www.ichaus.com
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 2/10
DESCRIPTION
The devices iC-VJ and iC-VJZ are control ICs for laser diodes. Control to the average of the laser cur- rent and integrated protective functions ensure save operation of the sensitive semiconductor laser. All re- quired functions for the pulse operation of a CW laser are integrated: a power driver and monitor amplifier for direct connection of the laser diode, an oscillator for pulse repetition frequency generation, a start-up and temperature protection as well as monitor and pulse repetition frequency outputs for synchronous control of a receiver circuit. The laser power control is adapted to the laser diode used with an external resistor at ISET. The capacitor at CI determines the control time constants. The oscillator operates with an external RC circuit in the range from about 10 kHz to 4 kMHz. The gener- ated pulse duty factor is a stable 1:1; the oscillator frequency is reduced to 1/16th by the integrated di- vider. An image of the laser diode current is output via MI. Output MI when connected with a low pass fil- ter forms a voltage proportional to the average laser current. This voltage is output to MO via the inte- grated voltage follower and is thus available for any applications. The Outputs PRF and NPRF supply the pulse repetition frequency complementarily to ana- logue levels (VCC / 2 ±0.75 Vpk) to be able to activate high-speed ECL logic of a receiver circuit. The IC contains protective diodes against ESD de- struction, a thermal shutdown, plus a start-up circuit for the laser diode driver to protect the laser diode when the supply voltage is switched on. PACKAGES SO16N to JEDEC Standard PIN CONFIGURATION SO16N (top view) iC−VJ# Code... ...yyww GND MI R RC AGND n.c. KLD AMD PRF MO VCC ISET n.c. CI NPRF n.c. ... PIN FUNCTIONS No. Name Function
1 AMD Anode Monitor Diode
2 KLD Cathode Laser Diode
3 GND Ground
4 MI Monitor Current Output
5 R Oscillator Resistor
6 RC Oscillator Capacitor
7 AGND Analogue Ground
8 n.c.
9 CI Averaging Capacitor
10 n.c.
11 ISET Set-up Resistor for the
12 VCC 5 V Supply Voltage
13 MO Monitor Voltage Output
14 PRF Pulse Repetition Frequency Output
15 NPRF Inverted PRF
16 n.c.
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 3/10 ABSOLUTE MAXIMUM RATINGS Beyond these values damage may occur; device operation is not guaranteed. Item Symbol Parameter Conditions Fig. Unit No. Min. Max. G001 VCC Supply Voltage 0 6 V G002 I(AGND) Current in AGND -4 4 mA G003 I(CI) Current in CI -4 4 mA G004 V(KLD) Voltage at KLD PRF = lo 0 6 V G005 I(KLD) Current in KLD PRF = hi -4 600 mA G006 I(AMD) Current in AMD iC-VJ -4 4 mA iC-VJZ -6 6 mA G007 I(PRF) Current in PRF -10 2 mA G008 I(NPRF) Current in NPRF -10 2 mA G009 I(R,RC) Current in R, RC -2 2 mA G010 I(ISET) Current at ISET -2 2 mA G011 I(MI) Current in MI -2 2 mA G012 I(MO) Current in MO -2 2 mA G013 Tj Junction Temperature -40 150 °C G014 Ts Storage Temperature -40 150 °C THERMAL DATA Operating Conditions: VCC = 5 V ±10% Item Symbol Parameter Conditions Fig. Unit No. Min. Typ. Max. T01 Ta Operating Ambient Temperature Range (extended temperature range on request) -25 90 °C T02 Rthja Thermal Resistance Chip to Ambientsoldered on PCB, without special cooling
140 K/W
All voltages are referenced to ground unless otherwise stated. All currents into the device pins are positive; all currents out of the device pins are negative.
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 4/10
ELECTRICAL CHARACTERISTICS
Item Symbol Parameter Conditions Tj Fig. Unit No. °C Min. Typ. Max. Total Device
001 VCC Permissible Supply Voltage
4.5 5.5 V
002 Iav(VCC) Supply Current in VCC (average
value) Iav(KLD) = 100 mA, fosc = 3.2 MHz ±20%, I(PRF , NPRF) = 0 50 mA 003 tp(KLD- PRF) Pulse Edge Delay I(KLD) to V(PRF) PRF(hi↔ lo), I(50%):V(50%) -70 70 ns 004 tp(KLD- NPRF) Pulse Edge Delay I(KLD) to V(NPRF) NPRF(hi ↔ lo), I(50%):V(50%) -70 70 ns Driver KLD, AMD 101 Vs(KLD) Saturation Voltage at KLD PRF = hi, I(KLD) = 200 mA 1.5 V
102 I0(KLD) Leakage Current in KLD PRF = lo, V(KLD) = VCC 10 µA
103 I(KLD) Current in KLD I(AMD) = 0 250 mA
104 V(AMD) Voltage at AMD iC-VJ:I(AMD) = 500 µA
iC-VJZ:I(AMD) = 1.5 mA 0.5 1.5 V 105 tr Current Rise Time in KLD Imax(KLD) = 20...250 mA, I(KLD): 10%→ 90% 150 ns 106 tf Current Fall Time in KLD Imax(KLD) = 20...250 mA, I(KLD): 90%→ 10% 150 ns
107 CR1()av Average Value for Current Ratio
I(AMD) / I(ISET) I(CI) = 0, closed control loop; iC-VJ 0.8 1 1.2 iC-VJZ 2.4 3 3.6 108 CR2() Current Ratio I(AMD) / I(CI)V(CI) = 1...3.5 V, ISET open; iC-VJ 0.9 1 1.1 iC-VJZ 2.7 3 3.3 Output PRF, NPRF 202 Vpk() Amplitude I(PRF , NPRF) = 0...-4 mA 625 750 875 mV 203 tpp() Pulse/Pause Ratio 0.95 1 1.05 204 j() Jitter VCC, fosc = const. 20 ns 205 tr() Rise Time CL() = 50 pF , V(): 10%→ 90% 150 ns 206 tf() Fall Time CL() = 50 pF , V(): 90%→ 10% 150 ns Oscillator R, RC 301 fosc Oscillator Frequency R1 = 800Ω, C1 = 100 pF 2.64 2.9 3.19 MHz 302 fosc/f0 Frequency Drift R × C = constant 0.85 1 1.15 Divider
401 Div Division Factor fosc / PRF 16
501 V(ISET) Reference Voltage 1.20 1.27 V 27 1.22 V
503 RSET Permissible Resistor at ISET to
AGND (Control Set-up Range) 2.7 50 kΩ Power-on and Thermal Shutdown 601 VCCon Turn-on Threshold VCC 3.0 4.1 V
602 VCChys Hysteresis 300 450 mV
603 Toff Thermal Shutdown Threshold 125 150 °C
604 Thys Thermal Shutdown Hysteresis 10 °C
605 Vs(CI)lo Saturation Voltage lo at CI in
VCC = 0...VCCon− VCChys, I(CI) = 300 µA 1.5 V
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 5/10 Item Symbol Parameter Conditions Tj Fig. Unit No. °C Min. Typ. Max.
606 Vs(CI)hi Saturation Voltage hi at CI Vs(CI)hi = VCC− V(CI),
RSET = 25 kΩ; iC-VJ:I(AMD) = 30 µA iC-VJZ:I(AMD) = 90 µA 0.3 V Monitor Outputs MI, MO
701 Iav(MI) Current in MI (Average Value)R(MI) = 10 kΩ, C(MI) = 100 nF ,
Iav(KLD) = 10...50 mA 0.15 0.19 0.23 % I(KLD)
702 Iav(MI) Current in MI (Average Value)R(MI) = 10 kΩ, C(MI) = 100 nF ,
Iav(KLD) = 50...125 mA 0.12 0.19 0.26 % I(KLD)
703 I0(MI) Leakage Current in MI PRF = lo, V(MI) = 0 V 3 µA
704 Vos(MO-
MI)
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 6/10 DESCRIPTION OF FUNCTIONS Laser Power Adjustment The iC-VJ and iC-VJZ devices can be adapted to CW laser diodes from 2 to 40 mW. Models can be used in which the cathode of the monitor diode is connected to the anode or the cathode of the laser diode. The driver output, pin KLD, permits laser diode cur- rents of up to 250 mA. In the event of a thermal over- load due to excessive high power dissipation, the driver is turned off. The pin ISET is used for the adjustment to the sensi- tivity of the monitor diode and to set the desired optical laser power. The setpoint for the average control of the monitor diode current is preset at this pin, by connect- ing it either to a resistor or a current source. When connected to a current source, by means of an operational amplifier with current output (OTA) for ex- ample, the laser power can also be modulated. In or- der to limit the current at pin ISET when turning on the supply for the OTA, however, the OTA output should be connected to the base point of RSET. The maximum current possible at ISET must be taken into consideration when dimensioning the capacitor C2. Example iC-VJ Laser diode with 5 mW maximum optical output, mon- itor diode with 0.13 mA/mW, average power 1 mW (peak power 2 mW; pulse duty ratio Twhi / T is 50%). RSET is calculated as: RSET = CR 1∗V (ISET) I(AMD ) = 1∗1.22V 0.13mA ≈ 9.4kΩ with the Electrical Characteristics No. 501 for V(ISET) and with No. 107 for current ratio CR1. Example iC-VJZ Laser diode with 5 mW maximum optical output, mon- itor diode with 0.75 mA at 3 mW, average power 1 mW (peak 2 mW; pulse duty ratio Twhi / T is 50%). For the average monitor current of 0.25 mA the resistor RSET is calculated as: RSET = CR 1∗V (ISET) I(AMD ) = 3∗1.22V 0.25mA ≈ 14.6kΩ with the Electrical Characteristics No. 501 for V(ISET) and with No. 107 (iC-VJZ) for current ratio CR1. DC−Monitor 5V Sync 16:1 NQ NQ Q 1 7 4 3 5 6 DRIVER OSCILLATOR POWER ON TH−SHUTDOWN DIVIDER REFERENCE MONITOR OUTPUT 800 Ω 100pF RSET 10kΩ 470nF 100nF 100 µ F
15 NPRF
R MO ISET MI AMD VCC RC
3 GND
14 PRF
iC−VJ/VJZ 1:1 iC−VJ 1:3 iC−VJZ Figure 1: Operation of a laser diode according to the example
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 9/10 EVALUATION BOARD For the devices iC-VJ/VJZ a Demo Board is avail- able for test purposes. The following figures show the schematic diagram and the component side of the test PCB. ALD
1 AMD
11 ISET
2 KLD
R 6 RC
12 VCC
7 AGND
12Ω 100nF RSET 10kΩ 470nF 680Ω (15kΩ ) RMOD OSC REF iC−VJ/ VJZ 82pF 10kΩ AMD KLD GND MI AGND VCC NPRF PRF MO IMOD 10kΩ (15kΩ ) Figure 8: Schematic diagram of the Demo Board Figure 9: Demo Board (components side) This specification is for a newly developed product. iC-Haus therefore reserves the right to change or update, without notice, any information contained herein, design and specification; and to discontinue or limit production or distribution of any product versions. Please contact iC-Haus to ascertain the current data. Copying – even as an excerpt – is only permitted with iC-Haus approval in writing and precise reference to source. iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of the product. iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product.
iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 10/10
ORDERING INFORMATION
Type Package Order Designation iC-VJ SO16N iC-VJ SO16N Demo Board iC-VJ EVAL VJD iC-VJZ SO16N iC-VJZ SO16N Demo Board iC-VJZ EVAL VJD For information about prices, terms of delivery, other packaging options etc. please contact: iC-Haus GmbH Tel.: +49 (61 35) 92 92-0 Am Kuemmerling 18 Fax: +49 (61 35) 92 92-192 D-55294 Bodenheim Web: http://www.ichaus.com GERMANY E-Mail: sales@ichaus.com