LM2737MTC TI1 | Alldatasheet
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+5V VIN = 3.3V VO = 1.2V@5A C O 1,2 2200PF 6.3V, 2.8A 1.5 PH 6.1 A, 9.6 m: R FB2 C C2 R C1 R CS C SS R FADJ R IN C IN D1 C BOOT 10PF 6.3V 10k 2.2k 10k 392k 2.2p 180p 12n 63.4k 2.2PF 10: 0.1P C IN1,2 C C1 R FB1 Si4884DY Si4884DY LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 LM2727/LM2737N-ChannelFETSynchronousBuckRegulatorControllerforLowOutput Voltages Check forSamples: LM2727 ,LM2737 1FEATURES DESCRIPTION The LM2727 and LM2737 are high-speed, 2• InputPower from 2.2Vto16V synchronous,switchingregulatorcontrollers.They• Output VoltageAdjustableDown to0.6V are intendedto controlcurrentsof 0.7A to 20A with
- Power Good flag,AdjustableSoft-Startand up to 95% conversionefficiencies.The LM2727 Output Enable forEasy Power Sequencing employs outputover-voltageand under-voltagelatch- off.For applicationswhere latch-offisnotdesired,the• Output Over-Voltageand Under-VoltageLatch- LM2737 can be used. Power up and downOff(LM2727) sequencing is achieved with the power-good flag,• Output Over-Voltageand Under-VoltageFlag adjustablesoft-startand outputenablefeatures.The (LM2737) LM2737 and LM2737 operatefrom a low-current5V biasand can convertfrom a 2.2V to16V power rail.• ReferenceAccuracy:1.5% (0°C -125°C) Both partsutilizea fixed-frequency,voltage-mode,• CurrentLimitWithoutSense Resistor PWM control architectureand the switching• SoftStart frequencyis adjustablefrom 50kHz to 2MHz by
- SwitchingFrequency from 50 kHz to2 MHz adjustingthe value of an externalresistor.Current limitis achieved by monitoringthe voltagedrop• TSSOP-14 Package across the on-resistanceof the low-sideMOSFET, which enhances low duty-cycleoperation.The wideAPPLICATIONS range of operatingfrequenciesgives the power
- Cable Modems supplydesignertheflexibilitytofine-tunecomponent size,cost,noiseand efficiency.The adaptive,non-• Set-TopBoxes/ Home Gateways overlappingMOSFET gate-driversand high-side• DDR Core Power bootstrap structurehelps to furthermaximize
- High-EfficiencyDistributedPower efficiency.The high-sidepower FET drainvoltagecan be from 2.2V to 16V and the output voltageis• LocalRegulationofCore Power adjustabledown to0.6V. TypicalApplication Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2002–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Connection Diagram Figure1. 14-Lead PlasticTSSOP θJA = 155°C/W See Package Number PW0014A PIN DESCRIPTION BOOT (Pin1)- SupplyrailfortheN-channelMOSFET gatedrive.The voltageshouldbe atleastone gatethresholdabove theregulator inputvoltagetoproperlyturnon thehigh-sideN-FET. LG (Pin2)-Gate driveforthelow-sideN-channelMOSFET. ThissignalisinterlockedwithHG toavoidshoot-throughproblems. PGND (Pins3,13)-Ground forFET drivecircuitry.Itshouldbe connectedtosystemground. SGND (Pin4)-Ground forsignallevelcircuitry.Itshouldbe connectedtosystemground. VCC (Pin5)-Supplyrailforthecontroller. PWGD (Pin6)- Power Good. Thisisan open drainoutput.The pinispulledlow when thechipisinUVP, OVP, or UVLO mode. During normaloperation,thispinisconnectedtoVCC orothervoltagesourcethrougha pull-upresistor. ISEN (Pin7) - Currentlimitthresholdsetting.Thissourcesa fixed50µA current.A resistorof appropriatevalueshouldbe connected between thispinand thedrainofthelow-sideFET. EAO (Pin8)-Outputoftheerroramplifier.The voltagelevelon thispiniscompared withan internallygeneratedramp signaltodetermine thedutycycle.Thispinisnecessaryforcompensatingthecontrolloop. SS (Pin9)-Softstartpin.A capacitorconnectedbetween thispinand groundsetsthespeed atwhichtheoutputvoltageramps up.Larger capacitorvalueresultsinsloweroutputvoltageramp butalsolowerinrushcurrent. FB (Pin10) - Thisistheinvertinginputoftheerroramplifier,which isused forsensingtheoutputvoltageand compensatingthecontrol loop. FREQ (Pin11)-The switchingfrequencyissetby connectinga resistorbetween thispinand ground. SD (Pin12)-IC LogicShutdown.When thispinispulledlow thechipturnsoffthehighsideswitchand turnson thelow sideswitch.While thispinislow,theIC willnotstartup.An internal20µA pull-upconnectsthispintoVCC . HG (Pin14)-Gate driveforthehigh-sideN-channelMOSFET. ThissignalisinterlockedwithLG toavoidshoot-throughproblems. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 AbsoluteMaximum Ratings(1)(2) VCC 7V BOOTV 21V JunctionTemperature 150°C StorageTemperature −65°C to150°C SolderingInformation Lead Temperature(soldering,10sec) 260°C InfraredorConvection(20sec) 235°C ESD Rating(3) 2 kV (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.Operatingratingsindicateconditionsfor whichthedeviceoperatescorrectly.OpeartingRatingsdo notimplyensuredperformancelimits. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) The human body model isa 100pF capacitordischargedthrougha 1.5kresistorintoeach pin. OperatingRatings SupplyVoltage(VCC ) 4.5Vto5.5V JunctionTemperatureRange −40°C to+125°C ThermalResistance(θJA) 155°C/W ElectricalCharacteristics VCC = 5V unlessotherwiseindicated.Typicalsand limitsappearinginplaintypeapplyforTA=TJ=+25°C. Limitsappearingin boldfacetypeapplyoverfullOperatingTemperatureRange. Datasheetmin/max specificationlimitsareensuredby design, test,orstatisticalanalysis. Symbol Parameter Conditions Min Typ Max Units VCC = 4.5V,0°C to+125°C 0.591 0.6 0.609 VCC = 5V,0°C to+125°C 0.591 0.6 0.609 VCC = 5.5V,0°C to+125°C 0.591 0.6 0.609 VFB_ADJ FB PinVoltage V VCC = 4.5V,−40°C to+125°C 0.589 0.6 0.609 VCC = 5V,−40°C to+125°C 0.589 0.6 0.609 VCC = 5.5V,−40°C to+125°C 0.589 0.6 0.609 VON UVLO Thresholds Rising 4.2 VFalling 3.6 SD = 5V,FB = 0.55V 1 1.5 2Fsw = 600kHz OperatingVCC Current mA IQ-V5 SD = 5V,FB = 0.65V 0.8 1.7 2.2Fsw = 600kHz Shutdown VCC Current SD = 0V 0.15 0.4 0.7 mA tPWGD1 PWGD PinResponse Time FB VoltageGoing Up 6 µs tPWGD2 PWGD PinResponse Time FB VoltageGoing Down 6 µs ISD SD PinInternalPull-upCurrent 20 µA ISS-ON SS PinSourceCurrent SS Voltage= 2.5V 0°C to+125°C 8 11 15 µA -40°C to+125°C 5 11 15 ISS-OC SS PinSinkCurrentDuringOver SS Voltage= 2.5V 95 µACurrent ISEN PinSourceCurrentTripPoint 0°C to+125°C 35 50 65ISEN-TH µA-40°C to+125°C 28 50 65 Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com ElectricalCharacteristics(continued) VCC = 5V unlessotherwiseindicated.Typicalsand limitsappearinginplaintypeapplyforTA=TJ=+25°C. Limitsappearingin boldfacetypeapplyoverfullOperatingTemperatureRange. Datasheetmin/max specificationlimitsareensuredby design, test,orstatisticalanalysis. Symbol Parameter Conditions Min Typ Max Units ERROR AMPLIFIER GBW ErrorAmplifierUnityGain 5 MHzBandwidth G ErrorAmplifierDC Gain 60 dB SR ErrorAmplifierSlew Rate 6 V/µA IFB FB PinBiasCurrent FB = 0.55V 0 15 100 nAFB = 0.65V 0 30 155 VEA ErrorAmplifierMaximum Swing Minimum 1.2 VMaximum 3.2 GATE DRIVE IQ-BOOT BOOT PinQuiescentCurrent BOOTV = 12V,EN = 0 0°C to+125°C 95 160 µA -40°C to+125°C 95 215 R DS1 Top FET DriverPull-UpON BOOT-SW = 5V@350mA 3 Ωresistance R DS2 Top FET DriverPull-DownON BOOT-SW = 5V@350mA 2 Ωresistance R DS3 BottomFET DriverPull-UpON BOOT-SW = 5V@350mA 3 Ωresistance R DS4 BottomFET DriverPull-DownON BOOT-SW = 5V@350mA 2 Ωresistance OSCILLATOR R FADJ = 590kΩ 50 R FADJ = 88.7kΩ 300 R FADJ = 42.2kΩ,0°C to+125°C 500 600 700 fOSC PWM Frequency kHz R FADJ = 42.2kΩ,-40°C to+125°C 490 600 700 R FADJ = 17.4kΩ 1400 R FADJ = 11.3kΩ 2000 D Max DutyCycle fPWM = 300kHz 90 % fPWM = 600kHz 88 LOGIC INPUTS AND OUTPUTS VSD-IH SD PinLogicHighTripPoint 2.6 3.5 V VSD-IL SD PinLogicLow TripPoint 0°C to+125°C 1.3 1.6 V-40°C to+125°C 1.25 1.6 VPWGD-TH-LO PWGD PinTripPoints FB VoltageGoing Down 0°C to+125°C 0.413 0.430 0.446 V -40°C to+125°C 0.410 0.430 0.446 VPWGD-TH-HI PWGD PinTripPoints FB VoltageGoing Up 0°C to+125°C 0.691 0.710 0.734 V -40°C to+125°C 0.688 0.710 0.734 VPWGD-HYS PWGD Hysteresis(LM2737 only) FB VoltageGoing Down FB Voltage 35 mVGoing Up 110
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PWM FREQUENCY (kHz) 612 614 616 618 620 622 624 626 628 630 AMBIENT TEMPERATURE ( oC) 0 10 20 25 35 45 55 65 75 85 95105115125 7.2 7.4 7.6 7.8 8.2 8.4 8.6 BOOT PIN CURRENT (mA) AMBIENT TEMPERATURE ( oC) 0 10 20 25 35 45 55 65 75 85 95105115125 AMBIENT TEMPERATURE ( oC) OPEARTING CURRENT(mA) 0 20 35 55 75 95 115 Without Bootstrap (Vboot = 12V) With Bootstrap (Vboot = 5V) 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6 1.62 1.64 BOOT PIN CURRENT (mA) 28.9 29.1 29.3 29.5 29.7 29.9 30.1 30.3 AMBIENT TEMPERATURE ( oC) 0 10 20 25 35 45 55 65 75 85 95105115125 100 0.2 1 3 5 7 9 OUTPUT CURRENT (A) EFFICIENCY (%) Vin = 5V Vin = 12V Vin = 3.3V 100 0.1 0.5 2 4 6 8 10 Vin = 5V Vin = 12V OUTPUT CURRENT (A) EFFICIENCY (%) LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 TypicalPerformance Characteristics Efficiency(VO = 1.5V) Efficiency(VO = 3.3V) FSW = 300kHz,TA = 25°C FSW = 300kHz,TA = 25°C Figure2. Figure3. VCC OperatingCurrent Bootpin Current vs vs Temperature Temperature forBOOTV = 12V FSW = 600kHz,No-Load FSW = 600kHz,Si4826DY FET, No-Load Figure4. Figure5. Bootpin Current PWM Frequency vs vs Temperature with5V Bootstrap Temperature FSW = 600kHz,Si4826DY FET, No-Load forR FADJ = 43.2kΩ Figure6. Figure7. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM2727 LM2737
100300 500 700 9001100 1300150017001900 PWM FREQUENCY (kHz) 9001000110012001300140015001600170018001900 PWM FREQUENCY (kHz) RF-ADJ (k:) PWM FREQUENCY (kHz) RF-ADJ (k:) 100 200 300 400 500 100 150200250300 350 400450500 600700800 LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) R FADJ R FADJ vs vs PWM Frequency PWM Frequency (in100 to800kHz range),TA = 25°C (in900 to2000kHz range),TA = 25°C Figure8. Figure9. Switch Waveforms (HG Falling) VIN = 5V,VO = 1.8V VCC OperatingCurrentPlus Boot Currentvs IO = 3A, C SS = 10nF PWM Frequency (Si4826DY FET, TA = 25°C) FSW = 600kHz Figure10. Figure11. Switch Waveforms (HG Rising) Start-Up(No-Load) VIN = 5V,VO = 1.8V VIN = 10V,VO = 1.2V IO = 3A, FSW = 600kHz C SS = 10nF,FSW = 300kHz Figure12. Figure13.
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) Start-Up(Full-Load) VIN = 10V,VO = 1.2V StartUp (No-Load,10x C SS ) IO = 10A, C SS = 10nF VIN = 10V,VO = 1.2V FSW = 300kHz C SS = 100nF,FSW = 300kHz Figure14. Figure15. StartUp (FullLoad, 10x C SS ) Shutdown VIN = 10V,VO = 1.2V VIN = 10V,VO = 1.2V IO = 10A, C SS = 100nF IO = 10A, C SS = 10nF FSW = 300kHz FSW = 300kHz Figure16. Figure17. StartUp (FullLoad, 10x C SS ) VIN = 10V,VO = 1.2V Load TransientResponse (IO = 0 to4A) IO = 10A, C SS = 100nF VIN = 12V,VO = 1.2V FSW = 300kHz FSW = 300kHz Figure18. Figure19. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Load TransientResponse (IO = 4 to0A) LineTransientResponse (VIN =5V to12V) VIN = 12V,VO = 1.2V VO = 1.2V,IO = 5A FSW = 300kHz FSW = 300kHz Figure20. Figure21. LineTransientResponse (VIN =12V to5V) LineTransientResponse VO = 1.2V,IO = 5A VO = 1.2V,IO = 5A FSW = 300kHz FSW = 300kHz Figure22. Figure23.
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BG = 0.6V 50PA 10PA OUTPUT CLAMP HI: 3.25V LO: 1.25V 3.25V 1.25V SYNCHRONOUS DRIVER LOGIC 10Ps DELAY 0.708V tol.=+/-2% 0.42V tol.=+/-2% hyst.=12% SHUT DOWN LATCH CLOCK & RAMPLOGIC S R R>S off oc UVLO SD FREQ Vcc PGND SGND FB EAO BOOT HG LG ISEN PWGD SS PGND 95P$ oc off off 20PA EA HIGH LOW PWM ILIM 3.05V SS CMP LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Block Diagram Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com
APPLICATION INFORMATION
The LM2727 isa voltage-mode,high-speedsynchronousbuck regulatorwitha PWM controlscheme. Itis designedforuse in set-topboxes,thinclients,DSL/Cable modems, and otherapplicationsthatrequirehigh efficiencybuck converters.Ithas power good (PWRGD), outputshutdown (SD),overvoltageprotection(OVP) and under voltageprotection(UVP). The over-voltageand under-voltagesignalsare OR gated to drivethe Power Good signaland a shutdown latch,which turnsoffthehighsidegateand turnson thelow sidegateif pulledlow.Currentlimitisachievedby sensingthevoltageVDS acrossthelow sideFET. Duringcurrentlimitthe highsidegateisturnedoffand thelow sidegateturnedon.The softstartcapacitorisdischargedby a 95µA source(reducingthe maximum dutycycle)untilthe currentisunder control.The LM2737 does not latchoff duringUVP orOVP, and uses theHIGH and LOW comparatorsforthepowergood functiononly. START UP When VCC exceeds4.2Vand theenablepinEN sees a logichighthesoftstartcapacitorbeginschargingthrough an internalfixed10µA source.Duringthistimetheoutputoftheerroramplifierisallowedtorisewiththevoltage ofthesoftstartcapacitor.Thiscapacitor,Css,determinessoftstarttime,and can be determinedapproximately by: (1) An applicationfora microprocessormightneed a delayof3ms, inwhichcase C SS wouldbe 12nF.Fora different device,a 100ms delaymightbe more appropriate,inwhich case C SS would be 400nF. (390 10%) Duringsoft startthePWRGD flagisforcedlow and isreleasedwhen thevoltagereachesa setvalue.At thispointthischip entersnormal operationmode, the Power Good flagisreleased,and the OVP and UVP functionsbegin to monitorVo. NORMAL OPERATION Whileinnormaloperationmode, theLM2727/37 regulatestheoutputvoltageby controllingthedutycycleofthe highsideand lowsideFETs. The equationgoverningoutputvoltageis: (2) The PWM frequencyisadjustablebetween 50kHz and 2MHz and issetby an externalresistor,R FADJ ,between theFREQ pinand ground.The resistanceneeded fora desiredfrequencyisapproximately: (3) MOSFET GATE DRIVERS The LM2727/37 has two gatedriversdesignedfordrivingN-channelMOSFETs ina synchronousmode. Power forthedriversissuppliedthroughtheBOOTV pin.For thehighsidegate(HG) tofullyturnon thetopFET, the BOOTV voltagemust be atleastone VGS(th)greaterthanVin.(BOOTV ≥ 2*Vin)Thisvoltagecan be suppliedby a separate,highervoltagesource,or suppliedfrom a localcharge pump structure.In a system such as a desktopcomputer,both5V and 12V areusuallyavailable.Hence ifVinwas 5V,the12V supplycouldbe used for BOOTV. 12V ismore than 2*Vin,so the HG would operatecorrectly.For a BOOTV of 12V, the initialgate chargingcurrentis2A,and theinitialgatedischargingcurrentistypically6A.
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Figure24. BOOTV Suppliedby Charge Pump Ina system withouta separate,highervoltage,a chargepump (bootstrap)can be builtusinga diodeand small capacitor,Figure24.The capacitorservestomaintainenough voltagebetween thetopFET gateand sourceto controlthedeviceeven when thetopFET ison and itssourcehas risenup totheinputvoltagelevel. The LM2727/37 gatedrivesuse a BiCMOS design.Unlikesome otherbipolarcontrolICs,thegatedrivershave rail-to-railswing,ensuringno spuriousturn-ondue tocapacitivecoupling. POWER GOOD SIGNAL The power good signalistheor-gatedflagrepresentingover-voltageand under-voltageprotection.Iftheoutput voltageis18% overit'snominalvalue,VFB = 0.7V,orfalls30% below thatvalue,VFB = 0.41V,thepower good flaggoes low.The converterthenturnsoffthehighsidegate,and turnson thelow sidegate.Unliketheoutput (LM2727 only)the power good flagisnot latchedoff.Itwillreturnto a logichighwhenever the feedbackpin voltageisbetween 70% and 118% of0.6V. UVLO The 4.2V turn-onthresholdon VCC has a builtinhysteresisof0.6V.Therefore,ifVCC dropsbelow 3.6V,thechip entersUVLO mode. UVLO consistsofturningoffthetopFET, turningon thebottomFET, and remaininginthat conditionuntilVCC risesabove 4.2V.As withshutdown,the softstartcapacitorisdischargedthrougha FET, ensuringthatthenextstart-upwillbe smooth. CURRENT LIMIT Currentlimitisrealizedby sensingthevoltageacrossthelow sideFET whileitison.The R DSON oftheFET isa known value,hence thecurrentthroughtheFET can be determinedas: VDS = I*R DSON (4) The currentlimitisdeterminedby an externalresistor,R CS ,connectedbetween theswitchnode and theISEN pin.A constantcurrentof 50µA is forcedthroughRcs, causinga fixedvoltagedrop.This fixedvoltageis compared againstVDS and ifthelatterishigher,thecurrentlimitofthechiphas been reached.R CS can be found by usingthefollowing: R CS = R DSON (LOW) *ILIM/50µA (5) For example,a conservative15A currentlimitina 10A designwitha minimum R DSON of10m Ω would requirea 3.3kΩ resistor.Because currentsensingisdone acrossthe low sideFET, no minimum highsideon-timeis necessary.Inthecurrentlimitmode theLM2727/37 willturnthehighsideoffand thekeep low sideon foras longas necessary.The chipalsodischargesthesoftstartcapacitorthrougha fixed95µA source.Inthisway, smooth rampingup oftheoutputvoltageas witha normalsoftstartisensured.The outputoftheLM2727/37 internalerroramplifierislimitedby the voltageon the softstartcapacitor.Hence, dischargingthe softstart capacitorreducesthemaximum dutycycleD ofthecontroller.Duringseverecurrentlimit,thisreductioninduty cyclewillreducetheoutputvoltage,ifthecurrentlimitconditionslastsforan extendedtime. Duringthefirstfew nanoseconds afterthelow sidegateturnson,thelow sideFET body diodeconducts.This causes an additional0.7V drop inVDS .The range ofVDS isnormallymuch lower.For example,ifR DSON were 10m Ω and thecurrentthroughtheFET was 10A, VDS would be 0.1V.The currentlimitwould see 0.7V as a 70A currentand entercurrentlimitimmediately.Hence currentlimitismasked duringthetimeittakesforthehigh sideswitchtoturnoffand thelowsideswitchtoturnon. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com UVP/OVP The outputundervoltageprotectionand overvoltageprotectionmechanisms engage at 70% and 118% of the targetoutputvoltage,respectively.Ineithercase,theLM2727 willturnoffthehighsideswitchand turnon the low sideswitch,and dischargethesoftstartcapacitorthrougha MOSFET switch.The chipremainsinthisstate untiltheshutdown pinhas been pulledtoa logiclow and thenreleased.The UVP functionismasked onlyduring thefirstchargingofthesoftstartcapacitor,when voltageisfirstappliedtotheVCC pin.Incontrast,theLM2737 is designedtocontinueoperatingduringUVP or OVP conditions,and toresume normaloperationonce thefault conditioniscleared.As withthe LM2727, the powergood flaggoes low duringthistime,givinga logic-level warningsignal. SHUT DOWN Ifthe shutdown pinSD ispulledlow,the LM2727/37 dischargesthe softstartcapacitorthrougha MOSFET switch.The highsideswitchisturnedoffand thelow sideswitchisturnedon.The LM2727/37 remainsinthis stateuntilSD isreleased. DESIGN CONSIDERATIONS The followingisa designprocedureforallthecomponents needed tocreatethecircuitshown inFigure26 inthe Example Circuitssection,a 5V into1.2V outconverter,capableofdelivering10A withan efficiencyof85%. The switchingfrequencyis300kHz. The same procedurescan be followedtocreatethecircuitshown inFigure26, Figure27,and tocreatemany otherdesignswithvaryinginputvoltages,outputvoltages,and outputcurrents. INPUT CAPACITOR The inputcapacitorsin a Buck switchingconverterare subjectedto high stressdue to the inputcurrent waveform,which isa square wave. Hence inputcaps are selectedfortheirripplecurrentcapabilityand their abilitytowithstandtheheatgeneratedas thatripplecurrentrunsthroughtheirESR. Inputrms ripplecurrentis approximately: (6) The power dissipatedby each inputcapacitoris: (7) Here,n isthenumber ofcapacitors,and indicatesthatpower lossineach cap decreasesrapidlyas thenumber ofinputcaps increase.The worst-caseripplefora Buck converteroccursduringfullload,when thedutycycleD = 50%. 10MV5600AX aluminum electrolyticcapacitorhas a ripplecurrentratingof 2.35A,up to 105°C. Two such capacitorsmake a conservativedesignthatallowsforunequalcurrentsharingbetween individualcaps.Each capacitorhas a maximum ESR of18m Ω at100 kHz.Power lossineach deviceisthen0.05W, and totallossis 0.1W.Otherpossibilitiesforinputand outputcapacitorsincludeMLCC, tantalum,OSCON, SP, and POSCAPS. INPUT INDUCTOR The inputinductorservestwo basicpurposes.First,inhighpower applications,theinputinductorhelpsinsulate the inputpower supplyfrom switchingnoise.This isespeciallyimportantifotherswitchingconvertersdraw currentfrom the same supply.Noise at high frequency,such as thatdeveloped by the LM2727 at 1MHz operation,couldpass throughtheinputstageofa slowerconverter,contaminatingand possiblyinterferingwith itsoperation. An inputinductoralso helps shieldthe LM2727 from high frequencynoise generatedby otherswitching converters.The second purposeoftheinputinductoristolimittheinputcurrentslewrate.Duringa change from no-loadtofull-load,theinputinductorsees thehighestvoltagechange acrossit,equaltothefullloadcurrent timestheinputcapacitorESR. Thisvaluedividedby themaximum allowableinputcurrentslew rategivesthe minimum inputinductance:
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 (8) Inthecase ofa desktopcomputersystem,theinputcurrentslewrateisthesystem power supplyor"silverbox" outputcurrentslew rate,which is typicallyabout 0.1A/µs. TotalinputcapacitorESR is 9m Ω, hence ΔV is 10*0.009= 90 mV, and theminimum inductancerequiredis0.9µH. The inputinductorshouldbe ratedtohandle theDC inputcurrent,whichisapproximatedby: (9) Inthiscase IIN-DC isabout2.8A.One possiblechoiceistheTDK SLF12575T-1R2N8R2, a 1.2µH devicethatcan handle8.2Arms,and has a DCR of7m Ω. OUTPUT INDUCTOR The outputinductorformsthefirsthalfofthepower stageina Buck converter.Itisresponsibleforsmoothingthe squarewave createdby theswitchingactionand forcontrollingtheoutputcurrentripple.(ΔIo)The inductanceis chosen by selectingbetween tradeoffsinefficiencyand responsetime.The smallertheoutputinductor,themore quicklythe convertercan respond to transientsin the load current.As shown in the efficiencycalculations, however,a smallerinductorrequiresa higherswitchingfrequencytomaintainthesame levelofoutputcurrent ripple.An increaseinfrequencycan mean increasinglossintheFETs due tothechargingand dischargingofthe gates.Generallythe switchingfrequencyis chosen so thatconductionlossoutweighsswitchingloss.The equationforoutputinductorselectionis: (10) Plugginginthevaluesforoutputcurrentripple,inputvoltage,outputvoltage,switchingfrequency,and assuming a 40% peak-to-peakoutputcurrentrippleyieldsan inductanceof1.5µH. The outputinductormust be ratedto handlethepeak current(alsoequaltothepeak switchcurrent),which is(Io+ 0.5*ΔIo).Thisis12A fora 10A design.The CoilcraftD05022-152HC is1.5µH, isratedto15Arms,and has a DCR of4m Ω. OUTPUT CAPACITOR The outputcapacitorformsthesecond halfofthepower stageofa Buck switchingconverter.Itisused tocontrol theoutputvoltageripple(ΔVo)and tosupplyloadcurrentduringfastloadtransients. Inthisexample theoutputcurrentis10A and theexpectedtypeofcapacitorisan aluminum electrolytic,as with theinputcapacitors.(Otherpossibilitiesincludeceramic,tantalum,and solidelectrolytecapacitors,however the ceramictypeoftendo nothave thelargecapacitanceneeded tosupplycurrentforloadtransients,and tantalums tendtobe more expensivethanaluminum electrolytic.)Aluminum capacitorstendtohave veryhighcapacitance and fairlylow ESR, meaning thatthe ESR zero,which affectssystem stability,willbe much lowerthan the switchingfrequency.The largecapacitancemeans thatatswitchingfrequency,theESR isdominant,hence the typeand number ofoutputcapacitorsisselectedon thebasisofESR. One simpleformulatofindthemaximum ESR based on thedesiredoutputvoltageripple,ΔVo and thedesignedoutputcurrentripple,ΔIo,is: (11) Inthisexample,inordertomaintaina 2% peak-to-peakoutputvoltagerippleand a 40% peak-to-peakinductor currentripple,therequiredmaximum ESR is6m Ω.Three Sanyo 10MV5600AX capacitorsinparallelwillgivean equivalentESR of6m Ω.The totalbulkcapacitanceof16.8mF isenough tosupplyeven severeloadtransients. Usingthesame capacitorsforbothinputand outputalsokeeps thebillofmaterialssimple. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com MOSFETS MOSFETS area criticalpartofany switchingcontrollerand have a directimpacton thesystem efficiency.Inthis case thetargetefficiencyis85% and thisisthevariablethatwilldeterminewhichdevicesareacceptable.Loss from thecapacitors,inductors,and theLM2727 itselfare detailedintheEfficiencysection,and come toabout 0.54W. To meet the targetefficiency,thisleaves1.45W forthe FET conductionloss,gate chargingloss,and switchingloss.Switchinglossisparticularlydifficulttoestimatebecause itdepends on many factors.When the loadcurrentismore thanabout1 or2 amps, conductionlossesoutweightheswitchingand gatecharginglosses. ThisallowsFET selectionbased on theR DSON oftheFET. AddingtheFET switchingand gate-charginglossesto theequationleaves1.2W forconductionlosses.The equationforconductionlossis: PCnd = D(I2 o *R DSON *k)+ (1-D)(I2 o *R DSON *k) (12) The factork isa constantwhichisadded toaccountfortheincreasingR DSON ofa FET due toheating.Here,k = 1.3.The Si4442DY has a typicalR DSON of4.1mΩ.When pluggedintotheequationforPCND theresultisa lossof 0.533W.Ifthisdesignwere fora 5V to2.5Vcircuit,an equalnumber ofFETs on thehighand lowsideswouldbe the bestsolution.With the dutycycleD = 0.24,itbecomes apparentthatthe low sideFET carriesthe load current76% of the time.Adding a second FET inparallelto the bottom FET couldimprovethe efficiencyby loweringtheeffectiveR DSON .The lowerthedutycycle,themore effectivea second oreven thirdFET can be.For a minimalincreaseingatechargingloss(0.054W)thedecreaseinconductionlossis0.15W. What was an 85% designimprovesto86% fortheadded costofone SO-8 MOSFET. CONTROL LOOP COMPONENTS The circuitisthisdesignexample and theothersshown intheExample Circuitssectionhave been compensated to improve theirDC gain and bandwidth.The resultof thiscompensationis betterlineand load transient responses.For theLM2727, thetopfeedbackdividerresistor,Rfb2,isalsoa partofthecompensation.For the 10A,5V to1.2Vdesign,thevaluesare: Cc1 = 4.7pF10%, Cc2 = 1nF 10%, Rc = 229kΩ 1%. These valuesgivea phase marginof63° and a bandwidth of29.3kHz. SUPPORT CAPACITORS AND RESISTORS The Cinxcapacitorsarehighfrequencybypass devices,designedtofilterharmonicsoftheswitchingfrequency and inputnoise.Two 1µF ceramiccapacitorswitha sufficientvoltagerating(10V fortheCircuitofFigure26)will work wellinalmostany case. Rbypass and Cbypass arestandardfiltercomponents designedtoensuresmooth DC voltageforthechipsupply and forthebootstrapstructure,ifitisused.Use 10Ω fortheresistorand a 2.2µF ceramicforthecap.Cb isthe bootstrapcapacitor,and shouldbe 0.1µF.(Inthecase ofa separate,highersupplytotheBOOTV pin,this0.1µF cap can be used tobypassthesupply.)Usinga Schottkydeviceforthebootstrapdiodeallowstheminimum drop forbothhighand lowsidedrivers.The On SemiconductorBAT54 orMBR0520 work well. Rp isa standardpull-upresistorfortheopen-drainpower good signal,and shouldbe 10kΩ.Ifthisfeatureisnot necessary,itcan be omitted. R CS istheresistorused tosetthecurrentlimit.Sincethedesigncallsfora peak currentmagnitude(Io+ 0.5* ΔIo)of12A,a safesettingwouldbe 15A.(Thisiswellbelowthesaturationcurrentoftheoutputinductor,whichis 25A.)FollowingtheequationfromtheCurrentLimitsection,use a 3.3kΩ resistor. R FADJ isused to set the switchingfrequencyof the chip.Followingthe equationin the Theory of Operation section,theclosest1% toleranceresistortoobtainfSW = 300kHz is88.7kΩ. C SS depends on theusersrequirements.Based on theequationforC SS intheTheoryofOperationsection,fora 3ms delay,a 12nF capacitorwillsuffice.
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 EFFICIENCY CALCULATIONS A reasonableestimationoftheefficiencyofa switchingcontrollercan be obtainedby addingtogetherthelossis each currentcarryingelementand usingtheequation: (13) The followingshows an efficiencycalculationtocomplement theCircuitofFigure26.Outputpower forthiscircuit is1.2Vx 10A = 12W. Chip OperatingLoss PIQ = IQ-VCC *VCC (14) 2mA x 5V = 0.01W FET Gate Charging Loss PGC = n *VCC *Q GS *fOSC (15) The valuen isthetotalnumber ofFETs used.The Si4442DY has a typicaltotalgatecharge,Q GS ,of36nC and an rds-onof4.1mΩ.Fora singleFET on topand bottom:2*5*36E-9*300,000= 0.108W FET SwitchingLoss PSW = 0.5*Vin*IO *(tr + tf)*fOSC (16) The Si4442DY has a typicalrisetimetr and falltimetf of11 and 47ns,respectively.0.5*5*10*58E-9*300,000= 0.435W FET Conduction Loss PCn = 0.533W (17) InputCapacitorLoss (18) (19) InputInductorLoss PLin= I2 in*DCR input-L (20) (21) Output InductorLoss PLout= I2 o *DCR output-L (22) 102*0.004= 0.4W System Efficiency (23) Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM2727 LM2737
Vin = 5V Vo = 1.2V@10A 3 x 5600 uF 10V, 3.1A 18 m: 1.5 uH
15 A, 4 m:
1.2 uH 8.2 A, 6.9 m: 0.1u 1.5k 2.2u 88.7k 12n 270p 4.7p 229k 4.99k 4.99k Co1-3 Lin 2 x 5600uF 10V, 2.35A Cin1,2 2x1uF 10V Cinx1, 2 LM27x7 HG BOOT ISEN LG PGND FB Vcc SD PWGD FREQ SS SGND EAO PGND +5V Vin = 12V Vo = 3.3V@10A 2 x 10 uF 25V, 3.3A 4 x 100 uF 10V, 55 m: 2.7 uH 14.4 A, 4.5 m: Rfb2 Rfb1 Cc1 Cc2 Rc1 Rcs Css Rfadj Rin Cin D1 Cboot 1uF 25V 1.2 uH 8.2 A, 6.9 m: Rc2 Cc3 0.1u 1.8k 2.2u 88.7k 12n 270p 6.8p 143.3k 8.45k 470p 11k 49.9k Cin1,2Cinx Co1-4 Lin LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Example Circuits Figure25. 5V-16V to3.3V,10A, 300kHz Thiscircuitand theone featuredon thefrontpage have been designedtodeliverhighcurrentand highefficiency ina smallpackage,bothinarea and inheightThe tallestcomponent inthiscircuitistheinductorL1,which is 6mm tall.The compensationhas been designedtotolerateinputvoltagesfrom5 to16V. Figure26. 5V to1.2V,10A, 300kHz Thiscircuitdesign,detailedintheDesignConsiderationssection,uses inexpensivealuminum capacitorsand off- the-shelfinductors.Itcan deliver10A atbetterthan85% efficiency.Largebulkcapacitanceon inputand output ensurestableoperation.
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+5V Vin = 3.3V Vo = 0.8V@5A 1 x 5600 uF 10V, 2.35A 2 x 4700 uF 16V, 2.8A 1 uH 11 A, 3.7 m: Rfb2 Rfb1 Cc1 Cc2 Rc1 Rcs Css Rfadj Rin Cin D1 Cboot 1uF 10V 1 uH 4.5 A, 7.5 m: 4.99k 3.3k 14.9k 147k 4.7p 680p 12n 49.9k 2.2u 0.1u Co1,2 Cin1Cinx Lin LM27x7 HG BOOT ISEN LG PGND FB Vcc SD PWGD FREQ SS SGND EAO PGND Vin = 5V Vo = 1.8V@3A 100 uF 10V, 1.9A 1 x 220 uF 4V, 55 m: 2.2 uH 6.1A, 12 m: Rfb2 Rfb1Cc1 Cc2 Rc1 Rcs Css Rfadj Rin Cin Cc Q1/Q2 +12V 4.99k 2.49k 2.7k 12n 43.2k 2.2u 0.1u 10p 560p 51.1k Cin1 Co1 L1LM27x7 LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Figure27. 5V to1.8V,3A, 600kHz The example circuitofFigure27 has been designedforminimum component countand overallsolutionsize.A switchingfrequencyof 600kHz allowsthe use of smallinput/outputcapacitorsand a smallinductor.The availabilityofseparate5V and 12V supplies(suchas thoseavailablefromdesk-topcomputersupplies)and the low currentfurtherreducecomponent count.Usingthe12V supplytopower theMOSFET driverseliminatesthe bootstrapdiode,D1. At low currents,smallerFETs ordualFETs areoftenthemost efficientsolutions.Here,the Si4826DY,an asymmetricdualFET inan SO-8 package,yields92% efficiencyata loadof2A. Figure28. 3.3Vto0.8V,5A, 500kHz The circuitof Figure28 demonstratesthe LM2727 deliveringa low outputvoltageat highefficiency(87%) A separate5V supplyisrequiredtorunthechip,however theinputvoltagecan be as lowas 2.2 Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM2727 LM2737
+5V Vin = 5 to 15V Vo = 1.8V@1A 1 x 15uF 25V, 3.3A 1 x 15uF 25V 3.1mohm 3.3uH 4.1A, 17.4 m: Rfb2 Rfb1 Cc1 Cc2 Rc1 Rcs Css Rfadj Rin Cin D1 Cboot 1uH 6.4A, 7.3 m: Rc2 Cc3 LM27x7 HG BOOT ISEN LG PGND FB Vcc SD PWGD FREQ SS SGND EAO PGND +5V Vin = 5 to 15V Vo = 3.3V@1A 1 x 15uF 25V, 3.3A 1 x 15uF 25V 3.1 m: 4.7uH 3.4A, 26 m: Rfb2 Rfb1Cc1 Cc2 Rc1 Rcs Rfadj Rin Cin D1 Cboot Q1/Q2 1uH 6.4 A, 7.3 m: Rc2 Cc3 2.2u 0.1u 1.5k 10k 2.21k 0.1u 2.2u 17.4k 39n 22p 680p 10.7k 680p66.5 10k 4.99k 1.5k 17.4k 27p 820p 12.1k 54.9 Co1 Cin1 Lin Lin Co1 Q1/Q2 LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Figure29. 1.8Vand 3.3V,1A, 1.4MHz,Simultaneous The circuitsinFigure29 areintendedforADSL applications,where thehighswitchingfrequencykeeps noiseout ofthedatatransmissionrange.Inthisdesign,the1.8and 3.3V outputscome up simultaneouslyby usingthe same softstartcapacitor.Because two currentsourcesnow chargethesame capacitor,thecapacitancemust be doubledto achievethe same softstarttime.(Here,40nF isused to achievea 5ms softstarttime.)A common softstartcapacitormeans that,shouldone circuitentercurrentlimit,theothercircuitwillalsoentercurrentlimit. Inaddition,ifbothcircuitsarebuiltwiththeLM2727, a UVP orOVP faulton one circuitwillcause bothcircuitsto latchoff.The additionalcompensationcomponents Rc2 and Cc3 areneeded forthelow ESR, allceramicoutput capacitors,and thewide(3x)rangeofVin.
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Vin = 12V Vo = 5V@1.8A 2 x 680uF 16V 26 m: 47uH 2.7A 53 m: Rfb2 Rfb1Cc1 Cc2 Rc1 Css Rfadj Cin Cboot Rc2 Cc3 10uF 16V 10uF 6.3V +5V (low current source) 10k 1.37k 22n 56p 3.9n 61.9k 750 12n 267k 0.1u 2.2u Cinx CoxCo1,2 680uF 16V 1.54A Cin1 LM27x7 HG BOOT ISEN LG PGND FB Vcc SD PWGD FREQ SS SGND EAO PGND +5V Vin = 11 to 13V Vo = 3.3V@3A 4.2uH, 5.5A 15 m: Rfb1Cc1 Cc2 Rc1 Rcs Css Rfadj Cin D1 Cboot Q1/Q2 1uH, 6.4A 7.3 m: Rc2 Cc3 2 x 680uF 16V 1.54A LM78L05 Vin = 11 to 13VTo 2nd LM27x7 2.21k 0.1u 2.2u 32.5k 12n 8.2p 4.7n2.37k 52.3k Lin Co1,2 680uF 16V, 1.54A Cin1 10uF 16V Cinx Rfb2 10k 10uF 25V Cox LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Figure30. 12V Unregulatedto3.3V,3A, 750kHz Thiscircuitshows theLM27x7 pairedwitha costeffectivesolutiontoprovidethe5V chippower supply,usingno extracomponents otherthantheLM78L05 regulatoritself.The inputvoltagecomes from a 'brick'power supply which does not regulatethe 12V linetightly.Additional,inexpensive10uF ceramiccapacitors(Cinxand Cox) help isolatedeviceswithsensitivedatabands,such as DSL and cable modems, from switchingnoise and harmonics. Figure31. 12V to5V,1.8A,100kHz Insituationswhere low costisveryimportant,theLM27x7 can alsobe used as an asynchronouscontroller,as shown intheabove circuit.Althougha a schottkydiodeinplaceofthebottomFET willnotbe as efficient,itwill costmuch lessthantheFET. The 5V atlowcurrentneeded toruntheLM27x7 couldcome froma zenerdiodeor inexpensiveregulator,such as theone shown inFigure30.Because theLM27x7 senses currentinthelow side MOSFET, thecurrentlimitfeaturewillnotfunctioninan asynchronousdesign.The ISEN pinshouldbe leftopen inthiscase. Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Table1.BillofMaterialsforTypicalApplicationCircuit ID PartNumber Type Size Parameters Qty. Vendor Synchronous TexasU1 LM2727 TSSOP-14 TSSOP-14 1Controller Instruments Q1, Q2 Si4884DY N-MOSFET SO-8 30V,4.1mΩ,36nC 1 Vishay Cin1,Cin2 C2012X5R1J106M MLCC 0805 10µF 6.3V 2 TDK Cinx C3216X7R1E105K Capacitor 1206 1µF,25V 1 TDK Co1, Co2 6MV2200WG AL-E 10mm D 20mm H 2200µF 6.3V125mΩ 2 Sanyo Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 Vishay Cin C3216X7R1E225K Capacitor 1206 0.1µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A2R2KXX Capacitor 1206 2.2pF10% 1 Vishay Cc2 VJ1206A181KXX Capacitor 1206 180pF 10% 1 Vishay Rin CRCW1206100J Resistor 1206 10Ω 5% 1 Vishay Rfadj CRCW12066342F Resistor 1206 63.4kΩ 1% 1 Vishay Rc1 CRCW12063923F Resistor 1206 392kΩ 1% 1 Vishay Rfb1 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay Rfb2 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay Rcs CRCW1206222J Resistor 1206 2.2kΩ 5% 1 Vishay Table2.BillofMaterialsforCircuitofFigure25 (IdenticaltoBOM for1.5Vexceptas noted below) ID PartNumber Type Size Parameters Qty. Vendor Co1, Co2, 10TPB100M POSCAP 7.3x4.3x2.8mm 100µF 10V 1.9Arms 4 SanyoCo3, Co4 Cc1 VJ1206A6R8KXX Capacitor 1206 6.8pF10% 1 Vishay Cc2 VJ1206A271KXX Capacitor 1206 270pF 10% 1 Vishay Cc3 VJ1206A471KXX Capacitor 1206 470pF 10% 1 Vishay Rc2 CRCW12068451F Resistor 1206 8.45kΩ 1% 1 Vishay Rfb1 CRCW12061102F Resistor 1206 11kΩ 1% 1 Vishay Table3.BillofMaterialsforCircuitofFigure26 ID PartNumber Type Size Parameters Qty. Vendor Synchronous TexasU1 LM2727 TSSOP-14 1Controller Instruments Q1 Si4442DY N-MOSFET SO-8 30V,4.1mΩ,@ 4.5V,36nC 1 Vishay Q2 Si4442DY N-MOSFET SO-8 30V,4.1mΩ,@ 4.5V,36nC 1 Vishay D1 BAT-54 SchottkyDiode SOT-23 30V 1 Vishay L1 D05022-152HC Inductor 22.35x16.26x8mm 1.5µH, 15A,4mΩ 1 Coilcraft AluminumCin1,Cin2 10MV5600AX 16mm D 25mm H 5600µF10V 2.35Arms 2 SanyoElectrolytic Cinx C3216X7R1E105K Capacitor 1206 1µF,25V 1 TDK Co1, Co2, Aluminum10MV5600AX 16mm D 25mm H 5600µF10V 2.35Arms 2 SanyoCo3 Electrolytic Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 Vishay Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A4R7KXX Capacitor 1206 4.7pF10% 1 Vishay
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Table3.BillofMaterialsforCircuitofFigure26 (continued) ID PartNumber Type Size Parameters Qty. Vendor Cc2 VJ1206A102KXX Capacitor 1206 1nF 10% 1 Vishay Rin CRCW1206100J Resistor 1206 10Ω 5% 1 Vishay Rfadj CRCW12068872F Resistor 1206 88.7kΩ 1% 1 Vishay Rc1 CRCW12062293F Resistor 1206 229kΩ 1% 1 Vishay Rfb1 CRCW12064991F Resistor 1206 4.99kΩ 1% 1 Vishay Rfb2 CRCW12064991F Resistor 1206 4.99kΩ 1% 1 Vishay Rcs CRCW1206152J Resistor 1206 1.5kΩ 5% 1 Vishay Table4.BillofMaterialsforCircuitofFigure27 ID PartNumber Type Size Parameters Qty. Vendor U1 LM2727 Synchronous TSSOP-14 1 Texas Controller Instruments Q1/Q2 Si4826DY AsymetricDual SO-8 30V,24m Ω/8nC 1 Vishay N-MOSFET Top 16.5mΩ/15nC Cin1 10TPB100ML POSCAP 7.3x4.3x3.1mm 100µF 10V 1.9Arms 1 Sanyo Co1 4TPB220ML POSCAP 7.3x4.3x3.1mm 220µF 4V 1.9Arms 1 Sanyo Cc C3216X7R1E105K Capacitor 1206 1µF,25V 1 TDK Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A100KXX Capacitor 1206 10pF 10% 1 Vishay Cc2 VJ1206A561KXX Capacitor 1206 560pF 10% 1 Vishay Rin CRCW1206100J Resistor 1206 10Ω 5% 1 Vishay Rfadj CRCW12064222F Resistor 1206 42.2kΩ 1% 1 Vishay Rc1 CRCW12065112F Resistor 1206 51.1kΩ 1% 1 Vishay Rfb1 CRCW12062491F Resistor 1206 2.49kΩ 1% 1 Vishay Rfb2 CRCW12064991F Resistor 1206 4.99kΩ 1% 1 Vishay Rcs CRCW1206272J Resistor 1206 2.7kΩ 5% 1 Vishay Table5.BillofMaterialsforCircuitofFigure28 ID PartNumber Type Size Parameters Qty. Vendor U1 LM2727 Synchronous TSSOP-14 1 Texas Controller Instruments Q1 Si4884DY N-MOSFET SO-8 30V,13.5mΩ,@ 4.5V 1 Vishay 15.3nC Q2 Si4884DY N-MOSFET SO-8 30V,13.5mΩ,@ 4.5V 1 Vishay 15.3nC D1 BAT-54 SchottkyDiode SOT-23 30V 1 Vishay L1 P1168.102T Inductor 12x12x4.5mm 1µH, 11A,3.7mΩ 1 Pulse Cin1 10MV5600AX Aluminum 16mm D 25mm H 5600µF 10V 2.35Arms 1 Sanyo Electrolytic Cinx C3216X7R1E105K Capacitor 1206 1µF,25V 1 TDK Co1, Co2, 16MV4700WX Aluminum 12.5mm D 30mm H 4700µF 16V 2.8Arms 2 Sanyo Co3 Electrolytic Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 Vishay Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A4R7KXX Capacitor 1206 4.7pF10% 1 Vishay Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Table5.BillofMaterialsforCircuitofFigure28 (continued) ID PartNumber Type Size Parameters Qty. Vendor Cc2 VJ1206A681KXX Capacitor 1206 680pF 10% 1 Vishay Rin CRCW1206100J Resistor 1206 10Ω 5% 1 Vishay Rfadj CRCW12064992F Resistor 1206 49.9kΩ 1% 1 Vishay Rc1 CRCW12061473F Resistor 1206 147kΩ 1% 1 Vishay Rfb1 CRCW12061492F Resistor 1206 14.9kΩ 1% 1 Vishay Rfb2 CRCW12064991F Resistor 1206 4.99kΩ 1% 1 Vishay Rcs CRCW1206332J Resistor 1206 3.3kΩ 5% 1 Vishay Table6.BillofMaterialsforCircuitofFigure29 ID PartNumber Type Size Parameters Qty. Vendor U1 LM2727 Synchronous TSSOP-14 1 Texas Controller Instruments Q1/Q2 Si4826DY AssymetricDual SO-8 30V,24m Ω/8nC 1 Vishay N-MOSFET Top 16.5mΩ/15nC D1 BAT-54 SchottkyDiode SOT-23 30V 1 Vishay Cin1 C4532X5R1E156M MLCC 1812 15µF 25V 3.3Arms 1 Sanyo Co1 C4532X5R1E156M MLCC 1812 15µF 25V 3.3Arms 1 Sanyo Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 TDK Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X393KXX Capacitor 1206 39nF,25V 1 Vishay Cc1 VJ1206A220KXX Capacitor 1206 22pF 10% 1 Vishay Cc2 VJ1206A681KXX Capacitor 1206 680pF 10% 1 Vishay Cc3 VJ1206A681KXX Capacitor 1206 680pF 10% 1 Vishay Rin CRCW1206100J Resistor 1206 10Ω 5% 1 Vishay Rfadj CRCW12061742F Resistor 1206 17.4kΩ 1% 1 Vishay Rc1 CRCW12061072F Resistor 1206 10.7kΩ 1% 1 Vishay Rc2 CRCW120666R5F Resistor 1206 66.5Ω 1% 1 Vishay Rfb1 CRCW12064991F Resistor 1206 4.99kΩ 1% 1 Vishay Rfb2 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay Rcs CRCW1206152J Resistor 1206 1.5kΩ 5% 1 Vishay Table7.BillofMaterialsfor3.3VCircuitofFigure29 (IdenticaltoBOM for1.8Vexceptas noted below) ID PartNumber Type Size Parameters Qty. Vendor Cc1 VJ1206A270KXX Capacitor 1206 27pF 10% 1 Vishay Cc2 VJ1206X102KXX Capacitor 1206 1nF 10% 1 Vishay Cc3 VJ1206A821KXX Capacitor 1206 820pF 10% 1 Vishay Rc1 CRCW12061212F Resistor 1206 12.1kΩ 1% 1 Vishay Rc2 CRCW12054R9F Resistor 1206 54.9Ω 1% 1 Vishay Rfb1 CRCW12062211F Resistor 1206 2.21kΩ 1% 1 Vishay Rfb2 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013 Table8.BillofMaterialsforCircuitofFigure30 ID PartNumber Type Size Parameters Qty. Vendor U1 LM2727 SynchronousController TSSOP-14 1 Texas Instrument s U2 LM78L05 VoltageRegulator SO-8 1 Texas Instrument s Q1/Q2 Si4826DY AssymetricDualN-MOSFET SO-8 30V,24m Ω/8nC 1 Vishay Top 16.5mΩ/15nC D1 BAT-54 SchottkyDiode SOT-23 30V 1 Vishay Cin1 16MV680WG Al-E D: 10mm L:12.5mm 680µF 16V 3.4Arms 1 Sanyo Cinx C3216X5R1C106M MLCC 1210 10µF 16V 3.4Arms 1 TDK Co1 Co2 16MV680WG MLCC 1812 15µF 25V 3.3Arms 1 Sanyo Cox C3216X5R10J06M MLCC 1206 10µF 6.3V2.7A TDK Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 Vishay Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A8R2KXX Capacitor 1206 8.2pF10% 1 Vishay Cc2 VJ1206X102KXX Capacitor 1206 1nF 10% 1 Vishay Cc3 VJ1206X472KXX Capacitor 1206 4.7nF10% 1 Vishay Rfadj CRCW12063252F Resistor 1206 32.5kΩ 1% 1 Vishay Rc1 CRCW12065232F Resistor 1206 52.3kΩ 1% 1 Vishay Rc2 CRCW120662371F Resistor 1206 2.37Ω 1% 1 Vishay Rfb1 CRCW12062211F Resistor 1206 2.21kΩ 1% 1 Vishay Rfb2 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay Rcs CRCW1206202J Resistor 1206 2kΩ 5% 1 Vishay Table9.BillofMaterialsforCircuitofFigure31 ID PartNumber Type Size Parameters Qty. Vendor U1 LM2727 Synchronous TSSOP-14 1 Texas Controller Instruments Q1 Si4894DY N-MOSFET SO-8 30V,15m Ω,11.5nC 1 Vishay D2 MBRS330T3 SchottkyDiode SO-8 30V,3A 1 ON L1 SLF12565T-470M2R4 Inductor 12.5x12.8x4.7mm 47µH, 2.7A53m Ω 1 TDK D1 MBR0520 SchottkyDiode 1812 20V 0.5A 1 ON Cin1 16MV680WG Al-E 1206 680µF,16V,1.54Arms 1 Sanyo Cinx C3216X5R1C106M MLCC 1206 10µF,16V,3.4Arms 1 TDK Co1, Co2 16MV680WG Al-E D: 10mm L:12.5mm 680µF 16V 26m Ω 2 Sanyo Cox C3216X5R10J06M MLCC 1206 10µF,6.3V2.7A 1 TDK Cboot VJ1206X104XXA Capacitor 1206 0.1µF,25V 1 Vishay Cin C3216X7R1E225K Capacitor 1206 2.2µF,25V 1 TDK Css VJ1206X123KXX Capacitor 1206 12nF,25V 1 Vishay Cc1 VJ1206A561KXX Capacitor 1206 56pF 10% 1 Vishay Cc2 VJ1206X392KXX Capacitor 1206 3.9nF10% 1 Vishay Cc3 VJ1206X223KXX Capacitor 1206 22nF 10% 1 Vishay Rfadj CRCW12062673F Resistor 1206 267kΩ 1% 1 Vishay Rc1 CRCW12066192F Resistor 1206 61.9kΩ 1% 1 Vishay Rc2 CRCW12067503F Resistor 1206 750kΩ 1% 1 Vishay Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LM2727 LM2737
LM2727,LM2737 SNVS205D –AUGUST 2002–REVISED MARCH 2013 www.ti.com Table9.BillofMaterialsforCircuitofFigure31 (continued) ID PartNumber Type Size Parameters Qty. Vendor Rfb1 CRCW12061371F Resistor 1206 1.37kΩ 1% 1 Vishay Rfb2 CRCW12061002F Resistor 1206 10kΩ 1% 1 Vishay Rcs CRCW1206122F Resistor 1206 1.2kΩ 5% 1 Vishay
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LM2727,LM2737 www.ti.com SNVS205D –AUGUST 2002–REVISED MARCH 2013
REVISION HISTORY
Changes from RevisionC (March 2013)toRevisionD Page Copyright© 2002–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 25 ProductFolderLinks:LM2727 LM2737
www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM2727MTC ACTIVE TSSOP PW 14 94 TBD Call TI Call TI 0 to 125 2727 MTC LM2727MTC/NOPB ACTIVE TSSOP PW 14 94 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 125 2727 MTC LM2727MTCX ACTIVE TSSOP PW 14 2500 TBD Call TI Call TI 0 to 125 2727 MTC LM2727MTCX/NOPB ACTIVE TSSOP PW 14 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 125 2727 MTC LM2737MTC ACTIVE TSSOP PW 14 94 TBD Call TI Call TI -40 to 125 2737 MTC LM2737MTC/NOPB ACTIVE TSSOP PW 14 94 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 2737 MTC LM2737MTCX ACTIVE TSSOP PW 14 2500 TBD Call TI Call TI -40 to 125 2737 MTC LM2737MTCX/NOPB ACTIVE TSSOP PW 14 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 2737 MTC (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
www.ti.com 11-Apr-2013 Addendum-Page 2 (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2727MTCX TSSOP PW 14 2500 367.0 367.0 35.0 LM2727MTCX/NOPB TSSOP PW 14 2500 367.0 367.0 35.0 LM2737MTCX TSSOP PW 14 2500 367.0 367.0 35.0 LM2737MTCX/NOPB TSSOP PW 14 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 2
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