VESDXX-02V VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.1, 20-Jun-12 1 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single ESD-Protection Diode in SOD-523 MARKING (example only) Bar = cathode marking X = date code Y = type code (see table below)

FEATURES

  • Single-line ESD-protection
  • Low leakage current
  • ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge
  • e 3 - S n
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 19344 20278 1 2 20279 XY

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VESD01-02V VESD01-02V-G-08 3000 3000 VESD03-02V VESD03-02V-G-08 3000 3000 VESD05-02V VESD05-02V-G-08 3000 3000 VESD08-02V VESD08-02V-G-08 3000 3000 VESD12-02V VESD12-02V-G-08 3000 3000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD01-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD03-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD05-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD08-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD12-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals A B C D E

www.vishay.com Vishay Semiconductors Rev. 1.1, 20-Jun-12 2 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS VESD01-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 7A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 63 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD03-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 9A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 108 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD05-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 6A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 120 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD08-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 4A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 120 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD12-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 2A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 25 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C

www.vishay.com Vishay Semiconductors Rev. 1.1, 20-Jun-12 3 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ELECTRICAL CHARACTERISTICS VESD01-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel --1 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM --1 V Reverse voltage at I R = 100 μA V R 1--V Reverse current at VR = 1 V I R - - 100 μA Reverse breakdown voltage at IR = 1 mA V BR 1.5 - - V Reverse clamping voltage at IPP (see fig. 1) V C -9-V Capacitance at VR = 0 V; f = 1 MHz C D -1 8 0- p F ELECTRICAL CHARACTERISTICS VESD03-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel --1 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM --3 V Reverse voltage at I R = 20 μA V R 3--V Reverse current at VR = 3 V I R - - 20 μA Reverse breakdown voltage at IR = 1 mA V BR 4--V Reverse clamping voltage at IPP (see fig. 1) V C -1 2- V Capacitance at VR = 0 V; f = 1 MHz C D -1 1 0- p F ELECTRICAL CHARACTERISTICS VESD05-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel --1 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM --5 V Reverse voltage at I R = 0.1 μA V R 5--V Reverse current at VR = 5 V I R -- 0 . 1 μ A Reverse breakdown voltage at IR = 1 mA V BR 6.5 - - V Reverse clamping voltage at IPP (see fig. 1) V C -2 0- V Capacitance at VR = 0 V; f = 1 MHz C D -5 5-p F ELECTRICAL CHARACTERISTICS VESD08-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel --1 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM --8 V Reverse voltage at I R = 0.1 μA V R 8--V Reverse current at VR = 8 V I R -- 0 . 1 μ A Reverse breakdown voltage at IR = 1 mA V BR 9--V Reverse clamping voltage at IPP (see fig. 1) V C -3 0- V Capacitance at VR = 0 V; f = 1 MHz C D -3 5-p F ELECTRICAL CHARACTERISTICS VESD12-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel --1 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM -- 1 2 V Reverse voltage at I R = 0.1 μA V R 12 - - V Reverse current at VR = 12 V I R -- 0 . 1 μ A Reverse breakdown voltage at IR = 1 mA V BR 14 - - V Reverse clamping voltage at IPP (see fig. 1) V C -2 5- V Capacitance at VR = 0 V; f = 1 MHz C D -3 0-p F

www.vishay.com Vishay Semiconductors Rev. 1.1, 20-Jun-12 4 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (Inches): SOD-523 foot print recommendation: Rev. h - Date: 13. Oct. 2010 16864 Document no.: S8-V-3880.02-001 (4) 0.4 (0.016) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 0.35 (0.014) 0.18 (0.007) 1.7 (0.067) 1.5 (0.059) 0.20 (0.008) 0.08 (0.003) 0.9 (0.035) 0.7 (0.028) 0.7 (0.028) 0.5 (0.020) 0.1 (0.004) max.

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