VESD08-02V-G-08

VESD01-02V_10 VISHAY | Alldatasheet

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Technical content

Single ESD-Protection Diode in SOD-523 VESDxx-02V Vishay Semiconductors Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.0, 08-Nov-10 1 MARKING (example only) Bar = cathode marking X = date code Y = type code (see table below)

FEATURES

• Single-line ESD-protection  Low leakage current  ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge e 3 - S n  Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 19344 20278 1 2 20279 XY

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VESD01-02V VESD01-02V-G-08 3000 3000 VESD03-02V VESD03-02V-G-08 3000 3000 VESD05-02V VESD05-02V-G-08 3000 3000 VESD08-02V VESD08-02V-G-08 3000 3000 VESD12-02V VESD12-02V-G-08 3000 3000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD01-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD03-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD05-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD08-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals VESD12-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals A B C D E ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

Vishay Semiconductors Single ESD-Protection Diode in SOD-523 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.0, 08-Nov-10 2 ABSOLUTE MAXIMUM RATINGS VESD01-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 610 00-4-5, 8/20 µs/single shot I PPM 7A Peak pulse power acc. IEC 610 00-4-5, 8/20 µs/single shot P PP 63 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD03-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 610 00-4-5, 8/20 µs/single shot I PPM 9A Peak pulse power acc. IEC 610 00-4-5, 8/20 µs/single shot P PP 108 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD05-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 610 00-4-5, 8/20 µs/single shot I PPM 6A Peak pulse power acc. IEC 610 00-4-5, 8/20 µs/single shot P PP 120 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD08-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 610 00-4-5, 8/20 µs/single shot I PPM 4A Peak pulse power acc. IEC 610 00-4-5, 8/20 µs/single shot P PP 120 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS VESD12-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current acc. IEC 610 00-4-5, 8/20 µs/single shot I PPM 2A Peak pulse power acc. IEC 610 00-4-5, 8/20 µs/single shot P PP 25 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature Tstg - 55 to + 150 °C

Single ESD-Protection Diode in SOD-523 Vishay Semiconductors Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.0, 08-Nov-10 3 ELECTRICAL CHARACTERISTICS VESD01-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse working voltage at I Rmax. VRWM 1--V Reverse current at V RWM IR - - 100 µA Reverse breakdown voltage at I R = 1 mA V BR 1.5 - - V Reverse clamping voltage at I PP (see fig. 1) V C -9-V Capacitance at V R = 0 V; f = 1 MHz C D - 180 - pF ELECTRICAL CHARACTERISTICS VESD03-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse working voltage at I Rmax. VRWM 3--V Reverse current at V RWM IR -- 2 0 µ A Reverse breakdown voltage at I R = 1 mA V BR 4--V Reverse clamping voltage at I PP (see fig. 1) V C -1 2- V Capacitance at V R = 0 V; f = 1 MHz C D - 110 - pF ELECTRICAL CHARACTERISTICS VESD05-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse working voltage at I Rmax. VRWM 5--V Reverse current at V RWM IR -- 0 . 1 µ A Reverse breakdown voltage at I R = 1 mA V BR 6.5 - - V Reverse clamping voltage at I PP (see fig. 1) V C -2 0- V Capacitance at V R = 0 V; f = 1 MHz C D -5 5-p F ELECTRICAL CHARACTERISTICS VESD08-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse working voltage at I Rmax. VRWM 8--V Reverse current at V RWM IR -- 0 . 1 µ A Reverse breakdown voltage at I R = 1 mA V BR 9--V Reverse clamping voltage at I PP (see fig. 1) V C -3 0- V Capacitance at V R = 0 V; f = 1 MHz C D -3 5-p F ELECTRICAL CHARACTERISTICS VESD12-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse working voltage at I Rmax. VRWM 12 - - V Reverse current at V RWM IR -- 0 . 1 µ A Reverse breakdown voltage at I R = 1 mA V BR 14 - - V Reverse clamping voltage at I PP (see fig. 1) V C -2 5- V Capacitance at V R = 0 V; f = 1 MHz C D -3 0-p F

Vishay Semiconductors Single ESD-Protection Diode in SOD-523 Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.0, 08-Nov-10 4 PACKAGE DIMENSIONS in millimeters (inches): SOD-523 foot print recommendation: Rev. h - Date: 13. Oct. 2010 16864 Document no.: S8-V-3880.02-001 (4) 0.4 (0.016) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 0.35 (0.014) 0.18 (0.007) 1.7 (0.067) 1.5 (0.059) 0.20 (0.008) 0.08 (0.003) 0.9 (0.035) 0.7 (0.028) 0.7 (0.028) 0.5 (0.020) 0.1 (0.004) max.

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