VESD01C1-02V VISHAY | Alldatasheet
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VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 1 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single-Line ESD-Protection Diode in SOD-523 MARKING (example only) Bar = cathode marking X = date code Y = type code (see table below) LINKS TO ADDITIONAL RESOURCES
FEATURES
- Compact SOD-523 package
- Low package height < 0.7 mm
- 1-line unidirectional ESD-protection
- AEC-Q101 qualified available
- Working range 1 V to 33 V
- ESD immunity acc. IEC 61000-4-2 ±15 kV to ±30 kV contact discharge ±15 kV to ±30 kV air discharge
- Lead plating: Sn (e3) - soldering can be checked by standard vision inspection - AOI = automated optical inspection
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 19344 20278 1 2 20279 XY 333DDD3 D 3D Models Available
ORDERING INFORMATION
(EXAMPLE) AEC-Q101 QUALIFIED ENVIRONMENTAL AND QUALITY CODE ORDERING CODE (EXAMPLE) RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS TIN PLATED 8K PER 7" REEL (8 mm TAPE) GREEN MOQ = 8K/BOX VESD05C1-02V -G 3 - 0 8 VESD05C1-02V-G3-08 VESD05C1-02V HG 3 - 0 8 VESD05C1-02VHG3-08 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD01C1-02V SOD-523 . A 1.32 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C VESD03C1-02V . B VESD05C1-02V . C VESD08C1-02V . D VESD12C1-02V . E VESD16C1-02V . G VESD26C1-02V . K VESD33C1-02V A
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 2 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS VESD01C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 14.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD03C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 11.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD05C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 8.7 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD08C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 6.60 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 3 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS VESD12C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 4.4 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD16C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 3.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD26C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 2.1 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 20 kV Air discharge acc. IEC 61000-4-2; 10 pulses 20 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD33C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 1.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 15 kV Air discharge acc. IEC 61000-4-2; 10 pulses 15 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 4 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ELECTRICAL CHARACTERISTICS VESD01C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM --1 V Reverse voltage at I R = 100 μA V R 11 . 2- V Reverse current at VR = 1 V I R - 20 100 μA Reverse breakdown voltage at IR = 1 mA V BR 1.5 - - V at IR = 20 mA V BR 2 . 52 . 6 52 . 8 V Reverse clamping voltage at I PP = IPPM = 14.6 A, tp = 8/20 μs V C -6 . 2 6 . 9V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 14.6 A, tp = 8/20 μs V F -3 3 . 9 2 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 1 3- Capacitance at VR = 0 V; f = 1 MHz C D 153 192 230 pF ELECTRICAL CHARACTERISTICS VESD03C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM --3 V Reverse voltage at I R = 20 μA V R 3--V Reverse current at VR = 3 V I R - 8 20 μA Reverse breakdown voltage at IR = 1 mA V BR 4 . 44 . 6 54 . 9 V Reverse clamping voltage at IPP = IPPM = 11.6 A, tp = 8/20 μs V C -7 . 8 8 . 7 0 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 11.6 A, tp = 8/20 μs V F -2 . 6 3 . 3 2 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 1 9- Capacitance at VR = 0 V; f = 1 MHz C D 89 112 135 pF ELECTRICAL CHARACTERISTICS VESD05C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM --5 V Reverse voltage at I R = 1 μA V R 5--V Reverse current at VR = 5 V I R - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 6.85 7.26 7.65 V Reverse clamping voltage at I PP = IPPM = 8.7 A, tp = 8/20 μs V C - 10.3 11.5 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 8.7 A, tp = 8/20 μs V F -2 . 2 2 . 7 4 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 2- Capacitance at VR = 0 V; f = 1 MHz C D 53 67 81 pF
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 5 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ELECTRICAL CHARACTERISTICS VESD08C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM --8 V Reverse voltage at I R = 0.1 μA V R 8--V Reverse current at VR = 8 V I R - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 9.5 10 10.5 V Reverse clamping voltage at IPP = IPPM = 6.6 A, tp = 8/20 μs V C - 13.7 15.3 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 6.6 A, tp = 8/20 μs V F -1 . 9 2 . 3 2 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 2 3- Capacitance at VR = 0 V; f = 1 MHz C D 37 47 57 pF ELECTRICAL CHARACTERISTICS VESD12C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM -- 1 2 V Reverse voltage at I R = 0.1 μA V R 12 - - V Reverse current at VR = 12 V I R - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 13.9 14.7 15.5 V Reverse clamping voltage at IPP = IPPM = 4.4 A, tp = 8/20 μs V C - 20.5 22.7 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 4.4 A, tp = 8/20 μs V F -1 . 6 1 . 8 8 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 4- Capacitance at VR = 0 V; f = 1 MHz C D 26 33 40 pF ELECTRICAL CHARACTERISTICS VESD16C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM -- 1 6 V Reverse voltage at I R = 0.1 μA V R 16 - - V Reverse current at VR = 16 V I R - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 17 17.9 18.8 V Reverse clamping voltage at IPP = IPPM = 3.6 A, tp = 8/20 μs V C - 25.3 28 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 3.6 A, tp = 8/20 μs V F -1 . 5 1 . 7 2 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -0 . 5 3- Capacitance at VR = 0 V; f = 1 MHz C D 21 27 33 pF
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 6 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ELECTRICAL CHARACTERISTICS VESD26C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM -- 2 6 V Reverse voltage at I R = 0.1 μA V R 26 - - V Reverse current at VR = 26 V I R - < 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 27.6 29.1 30.6 V Reverse clamping voltage at IPP = IPPM = 2.1 A, tp = 8/20 μs V C -4 3 4 8V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 2.1 A, tp = 8/20 μs V F -1 . 3 1 . 4 2 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -1 . 9- Capacitance at VR = 0 V; f = 1 MHz C D 14 17.5 21 pF ELECTRICAL CHARACTERISTICS VESD33C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM -- 3 3 V Reverse voltage at I R = 0.1 μA V R 33 - - V Reverse current at VR = 33 V I R - < 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA V BR 35.5 37.4 39.3 V Reverse clamping voltage at IPP = IPPM = 1.6 A, tp = 8/20 μs V C - 56 62.5 V Forward clamping voltage at IPP = 1 A, tp = 300 μs V F 0.9 1.1 1.2 V at IPP = IPPM = 1.6 A, tp = 8/20 μs V F - 1.22 1.32 V Dynamic resistance t p = 100 ns (TLP; pin 2-1) r dyn -3 . 6- Capacitance at VR = 0 V; f = 1 MHz C D 12 15 18 pF
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 7 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 / 150 pF) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current Fig. 4 - Typical Capacitance vs. Reverse Voltage Fig. 5 - Typical Reverse Voltage vs. Reverse Current Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current 2nd line 2nd line 20557 100 1000 10000 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 Axis Title 1st line 2nd line 2nd line IESD (%) t (ns) Rise time = 0.7 ns to 1 ns 100 1000 10000 100 01 0 2 0 3 0 4 0 Axis Title 1st line 2nd line 2nd line IPPM (%) t (µs) 2nd line 20 µs to 50 % 8 µs to 100 % 20548 0 5 10 15 20 2nd line VC (V) IPP (A) 2nd line Measured according IEC 61000-4-5 (8/20 µs - wave form) VESD01... VESD03... VESD05... VESD08... VESD12... VESD16... VESD26... VESD33... 100 0.01 0.1 1 10 100 2nd line CD (pF) VR (V) 2nd line VESD01... VESD03... VESD05... VESD08... VESD12... VESD16... VESD26... VESD33... f = 1 MHz 0.001 0.01 0.1 1 10 100 1000 10 000 2nd line VR (V) IR (µA) 2nd line VESD05... VESD08... VESD12... VESD16... VESD26... VESD33... 100 11 0 1 0 0 2nd line VC-TLP (V) ITLP (A) 2nd line Transmission line pulse (TLP): tp = 100 ns VESD01... VESD03... VESD05... VESD08... VESD12... VESD16... VESD26... VESD33...
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 8 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Forward Voltage vs. Forward Current Fig. 8 - Typical Forward Voltage vs. Forward Current PACKAGE DIMENSIONS in millimeters [inches]: SOD-523 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1 E - 0 81 E - 0 71 E - 0 61 E - 0 51 E - 0 41 E - 0 31 E - 0 21 E - 0 1
VF (V) IF (A) 2nd line VESD01... VESD03... to VESD33... 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 02 03 0 2nd line VF (V) IF (A) 2nd line Measured according IEC 61000-4-5 (8/20 µs - wave form) Footprint recommendation: Rev. 4 - Date: 03. Aug. 2020 0.5 [0.020] 1.45 [0.057] 0.35 [0.014] 1.3 [0.051] 1.1 [0.043] 0.35 [0.014] 0.18 [0.007] 0.9 [0.035] 0.7 [0.028] 0.75 [0.029] 0.55 [0.021] Created - Date: 04. April 2017 Document no.: S8-V-3880.02-003 (4) 23093 1.7 [0.067] 1.5 [0.059] 0.17 [0.007] 0.37 [0.015] 0.1 [0.004] 0.3 [0.012] 0.20 [0.008] 0.08 [0.003] 0.1 [0.004] max. 0.85 [0.033] min.
VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Rev. 1.3, 05-Aug-2020 9 Document Number: 86130 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CARRIER TAPE SOD-523 ORIENTATION IN CARRIER TAPE SOD-523 4 ± 0.1 Ø 1.5 ± 0.1 Ø 0.5 ± 0.05 2 ± 0.05 0.5 ± 0.05 0.18 ± 0.02 3.5 ± 0.05 1.75 ± 0.1 1.4 ± 0.1 1.95 ± 0.1 4 ± 0.1 0.73 ± 0.1 0.9 ± 0.1 max. 2° max. 2 B B-B Section B A A A-A Section +0.3 -0.1 05.07.2018 22959 Top view Cathode SOD-523 Unreeling direction 05.07.2018 22958
www.vishay.com Vishay Revision: 01-Jan-2021 1 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITH OUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, incl uding warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applicatio ns are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular applic ation. It is the customer’s responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different ap plications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay product s not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is gr anted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED