VESD05A1C-HD1_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Jan-2019 1 Document Number: 81798 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESD Protection Diode in LLP1006-2L MARKING (example only) Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS

FEATURES

  • Ultra compact LLP1006-2L package
  • Low package height < 0.4 mm
  • 1-line ESD protection
  • Low leakage current < 0.2 μA
  • Low load capacitance C D = 38 pF (VR = 2.5 V; f = 1 MHz)
  • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge
  • High surge current acc. IEC 61000-4-5 IPP > 8 A
  • Soldering can be checked by standard vision inspection. No X-ray necessary
  • Pin plating NiPdAu (e4) no whisker growth
  • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
  • PATENT(S): www.vishay.com/patents
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. 20855 20856 2 1 21121 XY click logo to get started Available Models

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY VESD05A1C-HD1 VESD05A1C-HD1-GS08 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD05A1C-HD1 LLP1006-2L F 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS VESD05A1C-HD1 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5; t P = 8/20 μs; single shot I PPM 8A Peak pulse power Acc. IEC 61000-4-5; t P = 8/20 μs; single shot P PP 80 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature T J -40 to +125 °C Storage temperature Tstg -55 to +150 °C

www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Jan-2019 2 Document Number: 81798 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V RWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V C) is defined by the breakthrough Voltage (V BR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V F) clamps the negative transient close to the ground level.  Due to the different clamping levels in forward and reverse direction the VESD05A1C-HD1 clamping behaviour is bidirectional and asymmetrical (BiAs). ELECTRICAL CHARACTERISTICS VESD05A1C-HD1 (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of li nes which can be protected N channel - - 1 lines Reverse stand-off voltage Max. reverse working voltage V RWM --5 V Reverse voltage At I R = 0.2 μA V R 5--V Reverse current At V R = 5 V I R - 0.03 0.2 μA Reverse breakdown voltage At I R = 1 mA V BR 66 . 78 V Reverse clamping voltage At IPP = 1 A V C -7 . 1 8 . V At IPP = IPPM = 8 A V C -9 . 3 1 0V Forward clamping voltage At IPP = 0.2 A V F - 0.95 1.2 V At IPP = 1 A V F -1 . 1 1 . 5V At IPP = IPPM = 8 A V F -1 . 9- V Capacitance At VR = 0 V; f = 1 MHz C D -6 3 7 5 p F At VR = 2.5 V; f = 1 MHz C D -3 8-p F 20925 Ground BiAs

www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Jan-2019 3 Document Number: 81798 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form (acc. IEC 61000-4-5) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current IPP 100 1000 10000 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 Axis Title 1st line 2nd line 2nd line IESD (%) t (ns) 2nd line Rise time = 0.7 ns to 1 ns 20557 100 1000 10000 100 01 0 2 0 3 0 4 0 Axis Title 1st line 2nd line 2nd line IPPM (%) t (µs) 2nd line 20 µs to 50 % 8 µs to 100 % 20548 0123456 f = 1 MHz 20710 C D (pF) VR (V) 0.001 0.01 0.1 100 20711 IF (mA) VF (V) 0.01 0.1 1 10 100 1000 10 000 20712 V R (V) IR (µA) 0123456789 1 0 VC Positive surge Negative surge 20713 V C (V) IPP (A) Measured acc. IEC 6100-4-5 (8/20 µs - wave form)

www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Jan-2019 4 Document Number: 81798 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Clamping Performance on + 8 kV ESD Events (acc. IEC 61000-4-2) Fig. 8 - Typical Clamping Performance on - 8 kV ESD Events (acc. IEC 61000-4-2) Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) -30 -20 -10 - 1 0 0 1 02 03 04 05 06 07 08 09 0 Acc. IEC 61000-4-2 +8 kV contact discharge 20714 V C-ESD (V) t (ns) -50 -40 -30 -20 -10 - 1 0 0 1 02 03 04 05 06 07 08 09 0 Acc. IEC 61000-4-2 -8 kV contact discharge 20715 V C-ESD (V) t (ns) -200 -150 -100 -50 100 150 200 0 5 10 15 20 25 30 35 Positive discharge Negative discharge 20716 V C-ESD (V) VESD (kV) Acc. IEC 61000-4-2 contact discharge V C-ESD

www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Jan-2019 5 Document Number: 81798 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.3 [0.012] 0.2 [0.008] 0.45 [0.018] 0.35 [0.014] 0.65 [0.026] 0.55 [0.022] 1.05 [0.041] 0.95 [0.037] Foot print recommendation: 1 [0.039] Solder resist mask Solder pad Document no.: S8-V-3906.04-005 (4) Rev. 7 - Date: 11.May 2016 20812 0.55 [0.022] 0.45 [0.018] 0.4 [0.016] 0.33 [0.013] 0.6 [0.024] 0.5 [0.020] 0.25 [0.010] 0.15 [0.006] 0.05 [0.002] 0 [0.000] 0.2 [0.008] 0.125 [0.005] ref. Orientation identification 0.25 [0.010] Pad Design Patented: US 9.018.537 B2)P( LLP1006-2X Top view Pad layout - view from top seen at bottom side Unreeling direction Orientation identification 02.05.2017 22965

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