VESD05A1-02VHG3-08

VESD05A1-02V_V02 VISHAY | Alldatasheet

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VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Rev. 1.7, 04-Aug-2020 1 Document Number: 86129 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single ESD-Protection Diode in SOD-523 MARKING (example only) Bar = cathode marking X = date code Y = type code (see table below) LINKS TO ADDITIONAL RESOURCES

FEATURES

• Compact SOD-523 package
• Low package height < 0.7 mm
• 1-line ESD-protection
• AEC-Q101 qualified available
• Working range 0 V to 5 V
• Low leakage current I R < 0.1 μA
• Surge current 16 A (at 8/20 μs)
• ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge
• e 3 - S n Tin plated exposed side wall of lead frame - Soldering can be checked by standard vision inspection - AOI = automated optical inspection - No X-ray necessary
• Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 19344 20278 1 2 20279 XY 333DDD3 D 3D Models Available

ORDERING INFORMATION

(EXAMPLE) AEC-Q101 QUALIFIED ENVIRONMENTAL AND QUALITY CODE ORDERING CODE (EXAMPLE) RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS TIN PLATED 8K PER 7" REEL (8 mm TAPE) GREEN MOQ = 8K/BOX VESD05A1-02V -G 3 - 0 8 VESD05A1-02V-G3-08 VESD05A1-02V HG 3 - 0 8 VESD05A1-02VHG3-08 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD05A1-02V (-G3-08 / HG3-08) SOD-523 . 1.32 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I PPM 16 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P PP 192 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature Tstg -55 to +150 °C F

VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Rev. 1.7, 04-Aug-2020 2 Document Number: 86129 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V RWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V C) is defined by the breakthrough voltage (V BR) level plus the voltage dro p at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V F) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is bidirectional and asymmetrical (BiAs). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N channel - - 1 lines Reverse stand off voltage Max. reverse working voltage V RWM --5 V Reverse voltage At I R = 1 μA V R 5--V Reverse current At VR = 5 V I R - < 0.1 1 μA Reverse breakdown voltage At IR = 1 mA V BR 66 . 8 7 . 5V Reverse clamping voltage At IPP = 1 A; 8/20 μs test pulse V C -7 . 2 8 . 5V At IPP = IPPM = 16 A; 8/20 μs test pulse V C - 10.5 12 V Forward clamping voltage At IPP = 0.2 A; 8/20 μs test pulse V F - 0.88 1.1 V At IPP = 1 A; 8/20 μs test pulse V F -1 1 . 5 V At IPP = IPPM = 16 A; 8/20 μs test pulse V F -3 . 2 4 . 5V Capacitance At VR = 0 V; f = 1 MHz C D - 130 150 pF At VR = 2.5 V; f = 1 MHz C D -7 6-p F 20280 1 2 Ground BiAs

VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Rev. 1.7, 04-Aug-2020 3 Document Number: 86129 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330  / 150 pF) Fig. 2 - 8/20μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current Fig. 4 - Typical Capacitance vs. Reverse Voltage Fig. 5 - Typical Reverse Voltage vs. Reverse Current Fig. 6 - Typical Forward Voltage vs. Forward Current 2nd line 2nd line 20557 100 1000 10000 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 Axis Title 1st line 2nd line 2nd line IESD (%) t (ns) Rise time = 0.7 ns to 1 ns 100 1000 10000 100 20548 10 20 30 40 Axis Title 1st line 2nd line IPPM (%) t (µs) 8 µs to 100 % 20 µs to 50 % 2d l i 2nd line 100 1000 10000 0 5 10 15 20 25 Axis Title 1st line 2nd line 2nd line VC (V) IPP (A) 2nd line Measured according IEC 61000-4-5 (8/20 µs - wave form) Reverse Forward 23075 100 1000 10000 100 120 140 0123456 Axis Title 1st line 2nd line 2nd line CD (pF) VR (V) 2nd line f = 1 MHz 23076 2nd line VR (V) IR (µA) 2nd line Tj = 150 °C Tj = 75 °C Tj = 25 °C 23077 100 1000 10000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Axis Title 1st line 2nd line 2nd line VF (V) IF (A) 2nd line Tj = 150 °C Tj = 75 °C Tj = 25 °C 23078

VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Rev. 1.7, 04-Aug-2020 4 Document Number: 86129 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current PACKAGE DIMENSIONS in millimeters [inches]: SOD-523 100 1000 10000 0 2 04 06 08 0 Axis Title 1st line 2nd line 2nd line VC-TLP (V) ITLP (A) 2nd line Transmission line pulse (TLP): t p = 100 ns Reverse Forward Footprint recommendation: Rev. 4 - Date: 03. Aug. 2020 0.5 [0.020] 1.45 [0.057] 0.35 [0.014] 1.3 [0.051] 1.1 [0.043] 0.35 [0.014] 0.18 [0.007] 0.9 [0.035] 0.7 [0.028] 0.75 [0.029] 0.55 [0.021] Created - Date: 04. April 2017 Document no.: S8-V-3880.02-003 (4) 23093 1.7 [0.067] 1.5 [0.059] 0.17 [0.007] 0.37 [0.015] 0.1 [0.004] 0.3 [0.012] 0.20 [0.008] 0.08 [0.003] 0.1 [0.004] max. 0.85 [0.033] min.

VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Rev. 1.7, 04-Aug-2020 5 Document Number: 86129 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CARRIER TAPE SOD-523 ORIENTATION IN CARRIER TAPE SOD-523 4 ± 0.1 Ø 1.5 ± 0.1 Ø 0.5 ± 0.05 2 ± 0.05 0.5 ± 0.05 0.18 ± 0.02 3.5 ± 0.05 1.75 ± 0.1 1.4 ± 0.1 1.95 ± 0.1 4 ± 0.1 0.73 ± 0.1 0.9 ± 0.1 max. 2° max. 2 B B-B Section B A A A-A Section +0.3 -0.1 05.07.2018 22959 Top view Cathode SOD-523 Unreeling direction 05.07.2018 22958

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