VEMT2000X01 VISHAY | Alldatasheet

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Document Number: 81595 For tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.2, 21-Feb-11 1 Silicon NPN Phototransistor VEMT2000X01, VEMT2020X01 Vishay Semiconductors

DESCRIPTION

VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package fo r surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters.

FEATURES

  • Package type: surface mount
  • Package form: GW, RGW
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
  • AEC-Q101 qualified
  • High radiant sensitivity
  • Daylight blocking filter matched with 830 nm to 950 nm IR emitters
  • Fast response times
  • Angle of half sensitivity:  = ± 15°
  • Package matched with IR emitter series VSMB2000X01
  • Floor life: 4 weeks, MSL 2a, acc. J-STD-020
  • Lead (Pb)-free reflow soldering
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

  • Detector in automotive applications
  • Photo interrupters
  • Miniature switches
  • Counters
  • E n c o d e r s
  • Position sensors Note
  • Test condition see table “Basic Characteristics” Note
  • MOQ: minimum order quantity

21568 VEMT2020X01 VEMT2000X01

COMPONENT Ica (mA)  (deg) 0.5 (nm) VEMT2000X01 6 ± 15 790 to 970 VEMT2020X01 6 ± 15 790 to 970

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 20 V Emitter collector voltage VECO 7V Collector current IC 50 mA Power power dissipation T amb  75 °C P V 100 mW Junction temperature Tj 100 °C Operating temperature range T amb - 40 to + 100 °C

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81595 2 Rev. 1.2, 21-Feb-11 VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Acc. reflow profile fig. 8 T sd 260 °C Thermal resistance junction/ambient Acc. J-STD-051 R thJA 250 K/W ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 100 120 0 1 02 03 04 05 06 07 08 09 0 1 0 0 21619 RthJA = 250 K/W Tamb - Ambient Temperature (°C) PV - Power Dissipation (mW) BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I C = 0.1 mA V CEO 20 V Collector dark current V CE = 5 V, E = 0 I CEO 1 100 nA Collector emitter capacitance V CE = 0 V, f = 1 MHz, E = 0 C CEO 25 pF Collector light current Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V Ica 369 m A Angle of half sensitivity  ± 15 deg Wavelength of peak sensitivity p 860 nm Range of spectral bandwidth 0.5 790 to 970 nm Collector emitter saturation voltage I C = 0.05 mA V CEsat 0.4 V Temperature coefficient of Ica Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V TkIca 1.1 %/K

Document Number: 81595 For tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.2, 21-Feb-11 3 VEMT2000X01, VEMT2020X01 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement Fig. 7 - Relative Collector Current vs. Ambient Temperature 100 1000 10 000 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Tamb - Ambient Temperature (°C) ICE0 - Collector Dark Current (nA) IF = 0 VCE = 70 V VCE = 25 V VCE = 5 V 20594 Ica - Collector Light Current (mA) Ee - Irradiance (mW/cm²)21573 0.01 0.1 100 0.01 0.1 1 10 VCE = 5 V, λ = 950 nm 100 0 250 500 750 1000 1250 1500 1750 2000 I C - Collector Current (µA) tr/tf - Rise/Fall Time (µs) tf tr 20599 RL = 100 Ω 21574 λ - Wavelength (nm) S(λ)rel - Relative Spectral Sensitivity 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 600 650 700 750 800 850 900 950 1000 1050 1100 Srel - Relative Sensitivity 94 8248 0.6 0.9 0.8 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 00.20.4 ϕ - Angular Displacement 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 λ 94 8239 Tamb - Ambient Temperature (°C) Ica rel - Relative Collector Current VCE = 5 V Ee = 1 mW/cm2 = 950 nm

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81595 4 Rev. 1.2, 21-Feb-11 VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor REFLOW SOLDER PROFILE Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK Devices are packed in mois ture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: T amb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING In case of moisture absorpt ion devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions PACKAGE DIMENSIONS VEMT2000X01 in millimeters 100 150 200 250 300 0 50 100 150 200 250 300 Time (s) Temperature (°C) 240 °C 245 °C max. 260 °C max. 120 s max. 100 s 217 °C max. 30 s max. ramp up 3 °C/s max. ramp down 6 °C/s 19841 255 °C 21570 2.2 5.8 ± 0.2 2.77 ± 0.2 2.3 ± 0.2 Collector 0.5 0.05 ± 0.1 0.254 1.1 ± 0.1 EmitterPIN ID 0.4 2.2 0.19 0.3 1.6 0.4 Ø 1.8 ± 0.1 2.3 ± 0.2 specifications according to DIN Technical drawings Not indicated to lerances ±0.1 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 Exposed copper 0.75 6.7 1.7 Ø 2.3 ± 0.1 Solder pad proposal acc. IPC 7351 Z 20:1

Document Number: 81595 For tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.2, 21-Feb-11 5 VEMT2000X01, VEMT2020X01 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS VEMT2020X01 in millimeters 2.2 4.2 ± 0.2 2.77 ± 0.2 2.3 ± 0.2 Collector 0.5 0.05 0.254 0.6 Emitter 0.4 2.2 0.19 0.3 1.6 0.4 Ø 1.8 2.3 ± 0.2 Not indicated tolerances ± 0.1 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 0.75 2.45 5.15 Exposed copper Solder pad proposal acc. IPC 7351 21569 Technical drawings according to DIN specifications Pin ID

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81595 6 Rev. 1.2, 21-Feb-11 VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor TAPE AND REEL DIMENSIONS VEMT2000X01 in millimeters Issue: 2; 18.03.10 Drawing-No.: 9.800-5100.01-4 Leader and trailer tape: Parts mounted Empty (400 mm min.) Empty (160 mm min.) Direction of pulling out Unreel direction Ø 62 ± 0.5 Ø 330 ± 1 Reel 2.5 ± 0.5 Label posted here coming out from reel Tape position X Ø13± 0.5 12.4 ± 1.5 X 2:1 I II 6000 pcs/reel 12 ± 0.3 2 ± 0.05 4 ± 0.1 4 ± 0.1 Ø 1.55 ± 0.05 3.05 ± 0.1 21572 Technical drawings according to DIN specifications Terminal position in tape Devicce VEMD2000 VEMD2500 Cathode Anode Anode Cathode VSMB2000 VSMG2000 VSMY2850RG VEMT2000 VEMT2500 Collector Emitter Lead I Lead II

Document Number: 81595 For tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.2, 21-Feb-11 7 VEMT2000X01, VEMT2020X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2020X01 in millimeters Drawing-No.: 9.800-5091.01-4 Leader and trailer tape: Parts mounted Empty (400 mm min.) Empty (160 mm min.) Direction of pulling out Unreel direction Ø 62 ± 0.5 Ø 330 ± 1 Reel 2.5± 0.5 Label posted here coming out from reel Tape position X Ø13 ± 0.5 12.4 ± 1.5 X 2:1I II 6000 pcs/reel 12 ± 0.3 2 ± 0.05 4 ± 0.1 4± 0.1 Ø 1.55 ± 0.05 3.05 ± 0.1 21571 technical drawings according to DIN specifications Issue: 3; 18.03.09 Terminal position in tape Devicce VSMB2020 VSMG2020 Cathode Anode Anode Cathode VEMD2020 VEMD2520 VSMY2850G VEMT2020 VEMT2520 Collector Emitter Lead I Lead II

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of pro ducts for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in gene ric applications. Such statements are not binding statements about the suitability of products for a partic ular application. It is the customer’s responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. Parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product co uld result in person al injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.