VEMD6010X01_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 1 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode

DESCRIPTION

VEMD6010X01 is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm2 sensitive area detecting visible and near infrared radiation.

FEATURES

  • Package type: surface-mount
  • Package form: 1206
  • Dimensions (L x W x H in mm): 4 x 2 x 1.05
  • Radiant sensitive area (in mm 2): 0.85
  • High photo sensitivity
  • High sensitivity
  • Suitable for visible and near infrared radiation
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 60°
  • Floor life: 72 h, MSL 4, according to J-STD-020
  • Lead (Pb)-free reflow soldering
  • AEC-Q101 qualified
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • High speed photo detector Note
  • Test conditions see table “Basic Characteristics” Note
  • MOQ: minimum order quantity PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (°) λ0.1 (nm) VEMD6010X01 9.5 ± 60 430 to 1100

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6010X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 32 V Power dissipation T amb ≤ 25 °C P V 215 mW Junction temperature T j 110 °C Ambient temperature range T amb -40 to +110 °C Storage temperature range T stg -40 to +110 °C Soldering temperature According to reflow solder profile Fig. 8 T sd 260 °C Thermal resistance junction to ambient According to J-STD-051 R thJA 270 K/W

www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 2 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Reverse Light Current vs. Reverse Voltage BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 50 mA V F -1- V Breakdown voltage I R = 100 μA, E = 0 V (BR) 32 - - V Reverse dark current V R = 10 V, E = 0 I ro -13 n A Diode capacitance VR = 0 V, f = 1 MHz, E = 0 C D -1 2- p F VR = 5 V, f = 1 MHz, E = 0 C D -3 . 6- p F Open circuit voltage E e = 1 mW/cm2, λ = 950 nm V o - 356 - mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TK Vo -- 3 . 1- m V / K Short circuit current E e = 1 mW/cm2, λ = 950 nm I k -9- μ A Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TK Ik -0 . 1- % / K Reverse light current E e = 1 mW/cm2, λ = 950 nm, VR = 5 V I ra 6.7 9.5 12.4 μA Angle of half sensitivity ϕ -± 6 0- ° Wavelength of peak sensitivity λp - 900 - nm Range of spectral bandwidth λ0.1 - 430 to 1100 - nm Rise time V R = 10 V, RL = 1 kΩ, λ = 820 nm t r - 100 - ns Fall time V R = 10 V, RL = 1 kΩ, λ = 820 nm t f - 100 - ns 100 1000 Iro - Reverse Dark Current (nA) Tamb - Ambient Temperature (°C)94 8427 VR = 10 V 100806040 0.6 0.8 1.0 1.2 1.4 Ira, rel - Relative Reverse Light Current Tamb - Ambient Temperature (°C)94 8416 VR = 5 V λ = 950 nm 0 10080604020 100 1000 10000 0.1 100 0.01 0.1 1 10 Axis Title 1st line 2nd line 2nd line Ira - Reverse Light Current (μA) Ee - Irradiance (mW/cm2) VR = 5 V, λ = 950 nm 100 0.1 1 10 100 VR - Reverse Voltage (V) Ira - Reverse Light Current (µA) λ = 950 nm Ee = 1 mW/cm2

www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 3 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Sensitivity vs. Angular Displacement REFLOW SOLDER PROFILE Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 DRYPACK Devices are packed in mois ture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 72 h Conditions: T amb < 30 °C, RH < 60 % Moisture sensitivity level 4, acc. to J-STD-020. DRYING In case of moisture absorpt ion devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 0.1 1 10 100 VR - Reverse Voltage (V)18438 CD - Diode Capacitance (pF) E = 0 f = 1 MHz 0.2 0.4 0.6 0.8 1.0 400 500 600 700 800 900 1000 1100 S(λ)rel - Relative Spectral Sensitivity λ - Wavelength (nm) 94 8013 100 1000 10000 Axis Title φ - Angular Displacement 2nd line 2nd line Ie, rel. - Relative Sensitivity 1st line 0.6 00.20.4 0.7 0.8 1.0 0.9 30° 40° 50° 60° 70° 80° 0° 20°10° 240 °C Max. 260 °C 217 °C 255 °C 19841 100 1000 10000 100 200 300 0 50 100 150 200 300 Axis Title 1st line 2nd line 2nd line Temperature (°C) Time (s) 150 250 250 245 °C Max. 100 s Max. 30 s Max. 120 s Max. ramp down 6 °C/s Max. ramp up 3 °C/s

www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 4 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters Recommended solder pad footprint 4± 0.15 1.0 0.1 2.4± 0.15 2± 0.15 (1) Anode Cathode Optical center 0.45 97° 4.64 2.46 0.12 0.8 0.88 1.02 Drawing-No. 6.541-5100.01-4 Preliminary issue 04.07.2013 Not indicated tolerances ± 0.1mm Technical drawings according to DIN specification. Device center 0.81 0.81 2± 0.15 0.19 0.745 0.745 0.97

www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 5 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BLISTER TAPE DIMENSIONS in millimeters

www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Mar-2022 6 Document Number: 84175 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 REEL DIMENSIONS in millimeters 20874

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