VEC2616-TL-H

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Technical content

Features

• ON-resistance Nch: R DS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
• 4V drive
• N-channel MOSFET + P-channel MOSFET
• Halogen free compliance
• Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 60 - -60 V Gate-to-Source Voltage V GSS ±20 ±20 V Drain Current (DC) I D 3 - -2.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 12 - -10 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 0.9 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7012-002 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 VEC8 VEC2616-TL-H Product & Package Information
• Package : VEC8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL UP LOT No. 876 5 1234

No. A1822-2/9 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current I DSS V DS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 2.6 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=1.5A, VGS=10V 62 80 m Ω RDS(on)2 I D=0.75A, VGS=4.5V 76 106 m Ω RDS(on)3 I D=0.75A, VGS=4V 83 116 m Ω Input Capacitance Ciss VDS=20V, f=1MHz 505 pF Output Capacitance Coss 57 pF Reverse Transfer Capacitance Crss 37 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 7.3 ns Rise Time tr 7.5 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf 22 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=3A 10 nC Gate-to-Source Charge Qgs 1.6 nC Gate-to-Drain “Miller” Charge Qgd 2.1 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.81 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -60 V Zero-Gate Voltage Drain Current I DSS V DS=- -60V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -1.5A 3.9 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -1.5A, VGS=- -10V 105 137 mΩ RDS(on)2 I D=- -0.75A, VGS=- -4.5V 128 180 mΩ RDS(on)3 I D=- -0.75A, VGS=- -4V 138 194 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 420 pF Output Capacitance Coss 54 pF Reverse Transfer Capacitance Crss 44 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 6.4 ns Rise Time tr 9.8 ns Turn-OFF Delay Time td(off) 65 ns Fall Time tf 36 ns Total Gate Charge Qg VDS=- -30V, VGS=- -10V, ID=- -2.5A 11 nC Gate-to-Source Charge Qgs 1.4 nC Gate-to-Drain “Miller” Charge Qgd 2n C Diode Forward Voltage VSD IS=- -2.5A, VGS=0V - -0.83 - -1.2 V

No. A1822-3/9 Switching Time Test Circuit [N-channel] [P-channel]

Ordering Information

Device Package Shipping memo VEC2616-TL-H VEC8 3,000pcs./reel Pb Free and Halogen Free [Nch] [Nch] [Nch] [Nch]RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V IT15538 - -60 120 140 100 130 150 110 160 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS =4.5V , I D=0.75A VGS =10.0V , I D=1.5AVGS =4.0V , I D=0.75A 048 1 2 1 42 6 10 16 IT15537 170 130 110 100 140 120 160 150 Ta=25°C ID=0.75A 1.5A ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 1.0 2.0 4.0 4.5 0.20.1 3.0 1.5 0.5 2.5 3.5 IT13789 IT13790 Ta=75 --25 4.0V 3.5V 3.0V VDS=10V 15.0V 10.0V 4.5V VGS=2.5V 7.0V PW=10μs D.C.≤1% P. G 50Ω G S D ID=1.5A RL=20Ω VDD=30V VOUT VIN 10V VIN VEC2616 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --1.5A RL=20Ω VDD= --30V VOUT VIN --10V VIN VEC2616

No. A1822-4/9 [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] [Pch] [Pch] SW Time -- ID Ciss, Coss, Crss -- VDS IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A IT13795 IT13793 0.1 1.0 23 5 7 23 5 7 02 0 4 0 10 30 50 60 100 1000 IT13796 IT13794 0.01 0.1 1.0 VGS=0V --25 Ta=75 td(on) td(off) tf tr VDD=30V VGS=10V Ciss Coss Crss f=1MHz 0.01 0.1 0.127 35 2 1027 351.0735 1.0 VDS=10V 75°CTa= --25 25°C | yfs | -- ID Forward Transfer Admittance, | yfs | -- S VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V 04 7 9 623 518 1 0 IT13797 VDS=30V ID=3A --2 --1 --5 --3 --4 --0.5 --1.5 --2.0 --1.0 --2.5 IT15911 IT15912 Ta=75 --25 VGS= --2.5V VDS= --10V --3.5V --16 .0V --10.0V --4.0V --4.5V IT15910 0.01 0.123 5 23 5 77 1.023 5 7 2 0.01 0.1 1.0 IDP=12A (PW≤10μs) ID=3A 100 μs DC operation (Ta=25 °C) 1ms 100ms 10ms Operation in this area is limited by RDS(on). 10 10035 7 --6.0V --3.0V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit

No. A1822-5/9 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V --1 --2 --3 --4 --5 --6 --7 --8 --10 --9 1112 4 6 8 1 0 VDS= --30V ID= --2.5A IT15919 --60 100 150 200 300 250 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --4.5V , I D= --0.75A VGS= --10.0V , I D= --1.5A IT15914 0- - 2 200 --4 300 100 250 150 Ta=25°C ID= --1.5A --0.75A IT15913 --5 1000 100 f=1MHz IT15918 Ciss Coss Crss --0.1 100 --1.022 7 35 7 35 IT15917 td(on) tr VDD= --30V VGS= --10V tf td(off) --0.01 --0.1 --1.0 VGS=0V --0.01 --0.1 0.1 --1.02 3 57 2 3 57 2 3 5 1.0 VDS= --10V IT15915 IT15916 Ta= - -25°C --25 Ta=75 °C25°C 75°C VGS= --4.0V , I D= --0.75A [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] IT15920 --0.01 --0.123 5 23 5 77 --1.023 5 7 2 --0.01 --0.1 --1.0 --10 IDP= --10A (PW≤10μs) ID= --2.5A 100 μs DC operation (Ta=25 °C) 1ms 100ms 10ms Operation in this area is limited by RDS(on). --10 --10035 7 Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit

No. A1822-6/9 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 20 40 60 1.0 0.6 0.2 0.8 0.9 0.4 1.2 140100 120 160 IT15921 1unit [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) Total dissipation

No. A1822-7/9 Taping Specifi cation VEC2616-TL-H

No. A1822-8/9 Outline Drawing Land Pattern Example VEC2616-TL-H Mass (g) Unit 0.015 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

PS No. A1822-9/9 Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.