VCUT03B1-DD1 VISHAY | Alldatasheet

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Document Number: 81148 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.3, 13-Jul-10 1 Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M VCUT03B1-DD1 Vishay Semiconductors MARKING (example only) Bar = pin 1 marking X = Date code Y = Type code (see table below)

FEATURES

  • Ultra compact LLP1006-2M package  Low package height < 0.4 mm  1-line ESD-protection  Working range ± 3.5 V  Low leakage current < 0.1 µA  Low load capacitance CD = 12.5 pF  ESD-protection acc. IEC 61000-4-2 ± 18 kV contact discharge ± 20 kV air discharge  Soldering can be checked by standard vision inspection. No X-ray necessary  Pin plating NiPdAu (e4) no whisker growth  Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20855 21129 1 2 21121 XY

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VCUT03B1-DD1 VCUT03B1-DD1 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VCUT03B1-DD1 LLP1006-2M N 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5; t p = 8/20 µs; single shot I PPM 3.5 A Peak pulse power Pin 1 to pin 2 Acc. IEC 61000-4-5; tp = 8/20 µs; single shot PPP 40 W ESD immunity Contact discharge acc. IEC61000-4-2; 10 pulses VESD ± 18 kVAir discharge acc. IEC61000-4-2; 10 pulses ± 20 Operating temperature Junction temperature T J - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 81148 2 Rev. 1.3, 13-Jul-10 VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M CUT THE SPIKES WITH VCUT03B1-DD1 The VCUT03B1-DD1 is a Bidirectional a nd Symmetrical (BiSy) ESD-protection devi ce which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03B1-DD1 offers a high isolation (low leakage current, low capacitance) within the sp ecified working range. Due to the short leads and small package size of the tiny LLP1006-2M package the lin e inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Fig. 2 - 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N lines - - 1 lines Reverse stand-off voltage at I R = 0.1 µA V RWM 3.5 - - V Reverse current at V = 3.5 I R -0 . 1 µ A Reverse breakdown voltage at I =1 mA V BR 5.8 6.7 7.5 V Reverse clamping voltage at IPP = 1 A V C -7 . 89 V at IPP = IPPM = 3.5 A V C - 9.5 11.5 V Capacitance at V = 0 V; f = 1 MHz C D -1 2 . 5 1 5p F at V = 2.5 V; f = 1 MHz C D -1 1 . 5- p F 0 % 20 % 40 % 60 % 80 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) Discharge Current IESD Rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 80 % 100 % 01 0 2 0 3 0 4 0 Time (µs) IPPM 20 µs to 50 % 8 µs to 100 % 20548 VR (V) CD (pF) 21787 0123456 f = 1 MHz IR (µA) VR (V) 21788 10-2 10-1 11 0 1 102 103 104 105

Document Number: 81148 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.3, 13-Jul-10 3 VCUT03B1-DD1 Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M Vishay Semiconductors Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) IPP (A) VC (V) 21789 012345 VC Measured acc. IEC 61000-4-5 (8/20 µs - wave form) t (ns) VC-ESD (V) 21790 - 30 - 20 - 10 - 10 0 10 20 30 40 50 60 70 809 0 Acc. IEC 61000-4-2 ± 8 kV contact discharge VESD (kV) VC-ESD (V) 21791 100 120 140 160 0 5 10 15 20 25 30 Acc. IEC 61000-4-2 contact discharge VC-ESD

www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 81148 4 Rev. 1.3, 13-Jul-10 VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2M 21798 Document no.:S8-V-3906.04-019 (4) solder resist mask solder pad 0.55 (0.022) 0.45 (0.018) 0.25 (0.010) 0.15 (0.006) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.2 (0.008) 0.40 (0.016) 0.33 (0.013) 1.05 (0.041) 0.95 (0.037) soldermask opening ± 0.03 measured middle of the package 0.05 (0.002) 0 (0.000) 0.125 (0.005) ref. 0.65 (0.026) 0.55 (0.022) 0.05 (0.002) 0.25 (0.010) 0.5 (0.020) 1 (0.039) 0.5 (0.020) 0.6 (0.024) 0.2 (0.008) Created - Date: 24.June.2009 Orientation Identification foot print recommendation:

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