VCR7N

VCR2N VISHAY | Alldatasheet

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Technical content

Document Number: 70293 S-41225—Rev. F, 28-Jun-04 www.vishay.com JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS(off) Max (V) V(BR)GSS Min (V) rDS(on) Max (/C0087) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS /C0068Continuous Voltage-Controlled Resistance /C0068High Off-Isolation /C0068High Input Impedance /C0068Gain Ranging Capability/Wide Range Signal Attenuation /C0068No Circuit Interaction /C0068Simplified Drive /C0068Variable Gain Amplifiers /C0068Voltage Controlled Oscillator /C0068AGC

DESCRIPTION

The VCR2N/4N/7N JFET voltage controlled resistors have an ac drain-source resistance that is controlled by a dc bias voltage (VGS) applied to their high impedance gate terminal. Minimum rDS occurs when VGS = 0 V. As VGS approaches the pinch-off voltage, rDS rapidly increases. This series of junction FETs is intended for applications where the drain-source voltage is a low-level ac signal with no dc component. Key to device performance is the predictable r DS change versus VGS bias where: rDSbias /C0091 rDS(@ VGS /C00430) 1–/C0356 VGS VGS(off) /C0356 These n-channel devices feature r DS(on) ranging from 20 to 8000 /C0087 . All packages are hermetically sealed and may be processed per MIL-S-19500 (see Military Information). D S G and Case TO-206AA (TO-18) Top View S C TO-206AF (TO-72) D G Top View VCR2N, VCR4N VCR7N For applications information see AN105.

www.vishay.com Document Number: 70293 S-41225—Rev. F, 28-Jun-04 ABSOLUTE MAXIMUM RATINGSa Notes: a. T A = 25/C0095C unless otherwise noted. b. Derate 2 mW/ /C0095C above 25/C0095C. SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits VCR2N VCR4N VCR7N Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A, VDS = 0 V −55 −25 −25 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 /C0109A −3.5 −7 −3.5 −7 −2.5 −5 V Gate Reverse Current IGSS VGS = −15 V, VDS = 0 V −5 −0.2 −0.1 nA VGS = 0 V, ID = 10 mA 20 60 Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 200 600 /C0087DS(on) VGS = 0 V, ID = 0.1 mA 4000 8000 Gate-Source Forward Voltage VGS(F) VDS = 0 V, IG = 1 mA 0.7 V Dynamic Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA f = 1 kHz 20 60 200 600 4000 8000 /C0087 Drain-Gate Capacitance Cdg VGD = −10 V, IS = 0 mA f = 1 MHz 7.5 3 1.5 pF Source-Gate Capacitance Csg VGS = −10 V, ID = 0 mA f = 1 kHz 7.5 3 1.5 pF Notes: NCB/NPA/NT a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0 0.2 0.4 0.6 0.8 1 Output Characteristics (VCR2N) VDS − Drain-Source Voltage (V) −0.5 V −2.0 V −2.5 V −1.0 V −1.5 V Output Characteristics (VCR4N) VDS − Drain-Source Voltage (V) −3.0 V 1.0 0.8 0.6 0.4 0.2 VGS(off) = −4 V VGS = 0 V VGS(off) = −4.2 V VGS = 0 V −4.0 V −3.5 V −1.5 V −2.0 V −3.0 V −2.5 V ID − Drain Current (mA) ID − Drain Current (mA)

Document Number: 70293 S-41225—Rev. F, 28-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0 0.2 0.4 0.6 0.8 1 Output Characteristics (VCR7N) VDS − Drain-Source Voltage (V) 200 160 120 −0.5 V −2.0 V −1.0 V −1.5 V VGS(off) = −2.5 V VGS = 0 V ID − Drain Current (/C0109A)

APPLICATIONS

A simple application of a FET VCR is shown in Figure 1, the circuit for a voltage divider attenuator. VIN FIGURE 1. Simple Attenuator Circuit