VCR11N LINEAR | Alldatasheet
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FEATURES
SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation Continuous Power Dissipation 300mW Maximum Current Forward Gate Current 10mA Maximum Voltages Gate to Drain Voltage 25V Gate to Source Voltage 25V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -8 -12 V ID = 1µA, VDS = 10V IGSS Gate Reverse Current -0.2 nA VGS = -15V, VDS = 0V rds(on) Dynamic Drain to Source On Resistance 100 200 Ω VGS = 0V, ID = 0A, f = 1kHz rDS(min) 0.95 1 VDS = 100mV, rDS = 200Ω2 rDS(max) Static Drain to Source On Resistance Ratio 0.95 1 VGS1 = VGS2, rDS = 2kΩ2 Cdgo Drain to Gate Capacitance 8 pF VGD = -10V, IS = 0A, f = 1MHz Csgo Source to Gate Capacitance 8 pF VGS = -10V, ID = 0A, f = 1MHz VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems *Contact the factory for surface mount package options and pin outs. BOTTOM VIEW TO -71 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. V GS1 + Control Voltage necessary to force rDS to 200Ω or 2kΩ. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261