VCAN26B2-03G_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.2, 08-Feb-2022 1 Document Number: 86160 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-323 MARKING (example only) ABC = type code (see table below) WW = date code working week VY = date code year LINKS TO ADDDITIONAL RESOURCES

FEATURES

  • For CAN-BUS application with flexible data rate (CAN FD)
  • Small SOT-323 package
  • 2-line ESD protection
  • Working range ± 26.5 V
  • Low leakage current I R < 0.05 μA
  • Low load capacitance CD = 3 pF (typ. at 5 V)
  • ESD immunity acc. IEC 61000-4-2 ± 25 kV contact discharge ± 30 kV air discharge
  • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV
  • e3 - pins plated with tin (Sn)
  • AEC-Q101 qualified available
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 SOT-32322743 1 2 22742 22744 ABC WW VY 333DDD3 D 3D Models

ORDERING INFORMATION

(EXAMPLE) ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE ORDERING CODE (EXAMPLE)AEC-Q101 QUALIFIED RoHS-COMPLIANT + LEAD (Pb)-FREE TERMINATIONS TIN PLATED 3K PER 7" REEL (8 mm TAPE) 15K/BOX = MOQ 10K PER 13" REEL (8 mm TAPE) 10K/BOX = MOQSTANDARD GREEN VCAN26B2-03G - E 3 -08 VCAN26B2-03G-E3-08 VCAN26B2-03G H E 3 -08 VCAN26B2-03GHE3-08 VCAN26B2-03G - E 3 -18 VCAN26B2-03G-E3-18 VCAN26B2-03G H E 3 -18 VCAN26B2-03GHE3-18 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VCAN26B2-03G SOT-323 BSY 5.65 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current T A = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot I PPM 2A Peak pulse power T A = 25 °C; pin 1 or 2 to pin 3; acc. IEC 61000-4-5; tp = 8/20 μs; single shot P PP 100 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C ± 25 kV Air discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C VESD ± 30 kV Contact discharge acc. ISO10605 330 pF / 330 Ω; 10 pulses, TA = 25 °C ± 15 kV Operating temperature Junction temperature T J -55 to +150 °C Storage temperature TSTG -55 to +150 °C

www.vishay.com Vishay Semiconductors Rev. 1.2, 08-Feb-2022 2 Document Number: 86160 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω / 150 pF) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 4 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP ELECTRICAL CHARACTERISTICS (pin 1 to 3, 3 to 1, 2 to 3, or 3 to 2) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of li nes which can be protected N channel --2 l i n e s Reverse stand-off voltage Max. reverse working voltage V RWM - - 26.5 V Reverse voltage At I R = 0.05 μA V R 26.5 - - V Reverse current At VRWM = 26.5 V IR - - 0.05 μAAt VRWM = 26.5 V; TJ = 125 °C - - 0.1 Reverse breakdown voltage At I R = 1 mA V BR 28 30 32 V Reverse clamping voltage At IPP 1 A; tp = 8/20 μs VC -3 4 4 1 VAt IPP = IPPM = 2 A; tp = 8/20 μs - 40 50 Capacitance At VR = 0 V, f = 1 MHz CD -45 pFAt VR = 5 V, f = 1 MHz - 3 4 Diode capacitance matching at VR = 5 V, CD13 vs. CD23 dCD -- 0 . 3 p F 2d l i 2nd line 20557 100 1000 10000 100 120 -10 0 10 20 30 40 50 60 70 80 90 100 Axis Title 1st line 2nd line 2nd line IESD (%) t (ns) Rise time = 0.7 ns to 1 ns 100 1000 10000 100 01 0 2 0 3 0 4 0 Axis Title 1st line 2nd line 2nd line IPPM (%) t (µs) 2nd line 20 µs to 50 % 8 µs to 100 % 20548 0 5 10 15 20 25 30 2nd line CD (pF) VR (V) 2nd line f = 1 MHz 23057 100 1000 10000 0123 Axis Title 1st line 2nd line 2nd line VC (V) IPP (A) 2nd line Measured according IEC 61000-4-5 (8/20 µs - wave form) 23058

www.vishay.com Vishay Semiconductors Rev. 1.2, 08-Feb-2022 3 Document Number: 86160 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Clamping Voltage VC-TLP vs. Pulse Current ITLP PACKAGE DIMENSIONS in millimeters (inches) SOT-323 100 120 0 5 10 15 20 25 30 35 2nd line VC-TLP (V) ITLP (A) 2nd line Transmission line pulse (TLP): t p = 100 ns 23059 foot print recommendation: Rev. 1 - Date: 06. April 2010 21113 Document no.: 6.541-5040.02-4 1.3 (0.051) 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 0.6 (0.024) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.8 (0.031) 2.2 (0.087) 2.0 (0.079) 0.4 (0.016) 0.2 (0.008) 1.35 (0.053) 1.15 (0.045) 1.4 (0.055) 1.2 (0.047) 1.0 (0.039) 0.8 (0.031) 0.525 (0.021) ref. 2.45 (0.096) 2.15 (0.085) 0.65 (0.026) typ 0.46 (0.018) 0.26 (0.010) 8° 0° 0.1 (0.004) 0.0 (0.000)

www.vishay.com Vishay Semiconductors Rev. 1.2, 08-Feb-2022 4 Document Number: 86160 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORIENTATION IN CARRIER TAPE SOT-323 CARRIER TAPE SOT-323 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 Top view Unreeling direction 22761 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 22762 A A-A Section A4 ± 0.12 ± 0.05 1.75 ± 0.1 0.254 ± 0.013 Ø 1+0.25 0.00 4 ± 0.1 B B 3.5 ± 0.05 8 +0.3 -0.1 B-B Section 2.4 +0.1 +0.1 1.19 ± 0.1 2.4 ± 0.1 Ø 1.55+0.1 0.0

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