VB029012Y

VB029 STMICROELECTRONICS | Alldatasheet

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/VB029(011Y) / VB029(012Y) HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. n PRIMARY COIL VOLTAGE INTERNALLY SET n COIL CURRENT LIMIT INTERNALLY SET n LOGIC LEVEL COMPATIBLE INPUT n DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT n DOUBLE FLAG-ON COIL CURRENT n DARLINGTON BASE ACCESSIBLE

DESCRIPTION

The VB029, VB029SP, VB029(011Y) VB029(012Y) are a high voltage power integrated circuit designed in STMicroelectronics VIPower technology, with vertical current flow power darlington and logic level compatible driving circuit. Built-in protection circuit for coil current limiting and collector voltage clamping allows the device to be used as smart, high voltage, high current interface in advanced electronic ignition system. TYPE V cl Icl Id(on) VB029 VB029SP VB029(011Y) VB029(012Y) 320V 12A 230mA BLOCK DIAGRAM PowerSO-10  GND OVERTEMP. DIAG 1 REFERENCE PROTECTION R SENSE Vd HV C DIAG INPUT DIAG 2 QUASI PROP. BASE CURRENT V base DRIVER PENTAWATT HV (012Y) ORDER CODES: PowerSO-10  VB029SP PENTAWATT HV (011Y) VB029(011Y) PENTAWATT HV PENTAWATT HV (011Y) PENTAWATT HV (012Y) VB029(012Y) PENTAWATT HV VB029

VB029 / VB029SP / VB029(011Y) / VB029(012Y) ABSOLUTE MAXIMUM RATING THERMAL DATA CONNECTION DIAGRAM (TOP VIEW) Symbol Parameter Value Unit HV c Collector voltage Internally limited V IC Collector current Internally limited A Vd Driving stage supply voltage 7 V Id Driving circuitry supply current 230 mA VIN Input voltage 10 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Symbol Parameter Value UnitPowerSO-10  PENTAWATT HV R thj-case Thermal resistance junction-case (MAX) 1.12 1.12 °C/W R thj-amb Thermal resistance junction-ambient (MAX) 62.5 62.5 °C/W PIN FUNCTION (PowerSO-10  ) (*) Pin 1÷5=Power GND, Pin 7=signal GND. Pin 7 must be connected to pins 1÷5 externally. PIN FUNCTION (PENTAWATT HV ) No Name Function 1÷5 GND Emitter power ground

6 BASE Darlington base

7(*) GND Control ground 8V d Driving stage supply voltage

9 INPUT Logic input channel

10 DIAG Diagnostic output signal

TAB HV C Primary coil output signal No Name Function

1 GND Emitter power ground

2V d Driving stage supply voltage 3H V C Primary coil output signal

4 INPUT Logic input channel

5 DIAG Diagnostic output signal

V d INPUT DIAG HV C HV C GND Vd INPUT DIAG PowerSO-10  PENTAWATT HV PENTAWATT HV (011Y) PENTAWATT HV (012Y)

VB029 / VB029SP / VB029(011Y) / VB029(012Y) ELECTRICAL CHARACTERISTICS (VCC =13.5V; Vd=5V; Tj=25ºC; Rcoil=510m Ω; Lcoil=7mH unless otherwise specified) Note 1: the primary coil current value Iclmust be measured 1ms after desaturation of the power stage. Note 2: time from input switching VNEG until collector voltage equal to 200V. (*) Vd -Vbe(on) (**) This thermal flag shift cannot be activated for lower than 125°C . Symbol Parameter Test Conditions Min Typ Max Unit Vcl High voltage clamp -40 °C ≤Tj≤125°C; IC =6A 320 360 420 V Vcg(sat)td Power stage saturation voltage derating in temperature I C =7.6A; VIN=4V; -40°C ≤Tj≤80°C IC =7.6A; VIN=4V; 80°C ≤Tj≤125°C 2.5 2.8 V V Id(off) Power-off supply current VIN=0.4V 10 mA Id(on) Power-on supply current VIN=4V; IC =7.6A; -40°C≤Tj≤125°C 230 mA Vd Driving stage supply voltage 4.5 5.5 V Icl Collector current limit VIN=4V; -40°C≤Tj≤125°C; (See note 1) 12 A VINH High level input voltage 4 5.5 V VINL Low level input voltage 0 0.8 V IINH High level input current VIN=4V 200 µA VdiagH High level diagnostic output voltage R EXT =22KΩ (See figure 1) 3.5 (*) V d V VdiagL Low level diagnostic output voltage R EXT =22KΩ (See figure 1) 0.5 V IC(diag1) First threshold level collector current 2.15 2.5 2.85 A IC(diag1)td First threshold level collector current drift with temperature (See figure 3) I C(diag2) Second threshold level collector current 6.1 6.5 6.9 A IC(diag2)td Second threshold level collector current drift with temperature (See figure 4) td(off) Turn-off delay time of output current IC =6A (See note 2) 25 µs tf(off) Turn-off fall time of output current IC =6A 8 µs td(diag) Delay time of diagnostic current R EXT =22KΩ (See figure 1) 1 µs tr(diag) Turn-on rise time of diagnostic current R EXT =22KΩ (See figure 1) 1 µs tf(diag) Turn-off fall time of diagnostic current R EXT =22KΩ (See figure 1) 1 µs ΔIth Thermal flag shift on first threshold Tj>125°C (**) 1 A Es/b Single pulse avalanche energy 300 mJ

VB029 / VB029SP / VB029(011Y) / VB029(012Y) PRINCIPLE OF OPERATION The VB029, VB029SP, VB029(011Y) VB029(012Y) are mainly intended as high voltage power switch device driven by a logic level input and interfaces directly to a high energy electronic ignition coil. The input V IN of theVB029, VB029SP, VB029(011Y) VB029(012Y) are fed from a low power signal generated by an external controller that determines both dwell time and ignition point. During V IN high (≥4V) the VB029, VB029SP, VB029(011Y) VB029(012Y) increase current in the coil to the desired, internally set current level. When the collector current exceeds 4.5A, the diagnostic signal is turned high and it remains so, until the load current reaches 5.8A (second threshold). At that value, the diagnostic signal is turned low, and theµC forces the V IN to the low state. During the coil current switch-off, the primary voltage HVC is clamped by a series of Zener diodes at an internally set value Vcl, typically 360V. The collector current sensed through the Rsense, is limited thanks to the “Current limiter” block that, as soon as the Icl level is reached, forces the darlington (using the “Driver” block) to limit the current provided. The transition from saturation to desaturation, coil current limiting phase, must have the ability to accommodate an overvoltage. A maximum overshoot of 20V is allowed. There can be some short period of time in which the output pin (HVC ) is pulled below ground by a negative current due to leakage inductances and stray capacitances of the ignition coil. This can cause parasitic glitches on the diagnostic output. VB029, VB029SP, VB029(011Y) VB029(012Y)have a built-in protection circuit that allows to lock the p-buried layer potential of the linear stage to the collector power, when the last one is pulled underground. THERMAL BEHAVIOUR You can see in the block diagram of the VB029, VB029SP, VB029(011Y) VB029(012Y)a box called overtemperature protection. The purpose of this circuit is to shift the current level at which the first diagnostic is activated down of about 1A. This information can be managed by the micro that can take the corrective action in order to reduce the power dissipation. This block is not an effective protection but just an overtemperature detection. The shift down of the first flag level cannot be present for temperatures lower than 125°C. As an example of its behavior you can suppose a very simple motor management system in which the micro does just a simple arithmetic calculation to decide when to switch-off the device after the first flag threshold. EXAMPLE: I C(DIAG1) info after x ms (IC(DIAG1)=2.5A) Iswitch-offinfo after kx ms. As soon as the temperature rises over the overtemp threshold, the first diagnostic is shifted down to about 1.5A and, in this example, the switch-off current will be kx*1.5 / 2.5. OVERVOLTAGE The VB029, VB029SP, VB029(011Y) VB029(012Y) can withstand the following transients of the battery line: -100V / 2ms (Ri=10Ω ) +100V / 0.2ms (Ri=10Ω ) +50V / 400ms (Ri=4.2Ω, with VIN=3V) FIGURE 1: Application circuit

VB029 / VB029SP / VB029(011Y) / VB029(012Y) DIM. mm. inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h 0.50 0.002 Q 1.70 0.067 α 0º 8º DETAIL ”A” PLANE SEATING α L F h A D D1== 0.10 A E1E3 C Q A B B DETAIL ”A” SEATING PLANE 610 eB HE M0.25 PowerSO-10  MECHANICAL DATA

VB029 / VB029SP / VB029(011Y) / VB029(012Y) DIM. mm. inch A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.11 E 0.35 0.55 0.014 0.022 F 0.60 0.80 0.024 0.031 G1 4.91 5.21 0.193 0.205 G2 7.49 7.80 0.295 0.307 H1 9.30 9.70 0.366 0.382 H2 10.40 0.409 H3 10.05 10.40 0.396 0.409 L 15.60 17.30 6.14 0.681 L1 14.60 15.22 0.575 0.599 L2 21.20 21.85 0.835 0.860 L3 22.20 22.82 0.874 0.898 L5 2.60 3 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6 6.60 0.236 0.260 M 2.50 3.10 0.098 0.122 M1 4.50 5.60 0.177 0.220 R 0.50 0.02 V4 90 ° (typ) Diam 3.65 3.85 0.144 0.152 P023H3 PENTAWATT HV MECHANICAL DATA

VB029 / VB029SP / VB029(011Y) / VB029(012Y) P023H1 DIM. mm. inch A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.11 E 0.35 0.55 0.014 0.022 F 0.60 0.80 0.024 0.031 G1 4.91 5.21 0.193 0.205 G2 7.49 7.80 0.295 0.307 H1 9.30 9.70 0.366 0.382 H2 10.40 0.409 H3 10.05 10.40 0.396 0.409 L1 3.90 4.50 0.154 0.177 L2 15.10 16.10 0.594 0.634 L3 4.80 5.40 0.189 0.213 L5 2.60 3.00 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6.00 6.60 0.236 0.26 R 0.5 V2 30 ° (typ) V4 90 ° (typ) DIA 3.65 3.85 0.144 0.152 PENTAWATT HV 011Y (horizontal) MECHANICAL DATA

VB029 / VB029SP / VB029(011Y) / VB029(012Y) 11 1 DIM. mm. inch A 4.3 4.8 0.169 0.189 A1 2.5 3.1 0.098 0.122 b 0.6 0.8 0.024 0.031 b1 0.75 0.9 0.03 0.035 c 0.35 0.55 0.014 0.022 c1 1.22 1.42 0.048 0.056 D 9 9.35 0.354 0.368 D1 15.2 15.8 0.598 0.622 e 2.44 2.64 0.096 0.104 e1 3.71 3.91 0.146 0.154 E 10 10.4 0.394 0.409 L 22.32 22.92 0.879 0.902 L1 25.1 25.7 0.988 1.012 P 3.65 3.95 0.144 0.156 S 2.55 3.05 0.1 0.12 e S E b L c D P A P010P PENTAWATT HV 012Y (in line) MECHANICAL DATA

VB029 / VB029SP / VB029(011Y) / VB029(012Y) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com