V8P20 VISHAY | Alldatasheet
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Document Number: 89315 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 4 A V8P20 Vishay General Semiconductor New Product
FEATURES
- Very low profile - typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converte rs and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 200 V IFSM 150 A VF at IF = 8.0 A 0.68 V TJ max. 150 °C K TO-277A (SMPC) TMBS® eSMP® Series Anode 1 Anode 2Cathode K MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V8P20 UNIT Device marking code V820 Maximum repetitive peak reverse voltage V RRM 200 V Maximum average forward rectified current (fig. 1) IF (1) 8.0 A IF (2) 2.2 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range T J, TSTG - 40 to + 150 °C
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 89315 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P20 Vishay General Semiconductor New Product Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Notes (1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient (2) Mounted on 30 mm x 30 mm Al PCB; thermal resistance RJM - junction to mount RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage I F = 4 A TA = 25 °C VF (1) 0.80 - V IF = 8 A 0.95 1.40 IF = 4 A TA = 125 °C 0.60 - IF = 8 A 0.68 0.76 Reverse current VR = 180 V TA = 25 °C IR (2) 2.0 - μA TA = 125 °C 2.1 - mA VR = 200 V TA = 25 °C 6.4 250 μA TA = 125 °C 3.4 20 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V8P20 UNIT Typical thermal resistance R JA (1) 80 °C/W RJM (2) 4 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8P20-M3/86A 0.10 86A 1500 7" diam eter plastic tape and reel V8P20-M3/87A 0.10 87A 6500 13" diam eter plastic tape and reel Ambient Temperature (°C) 07 5 1 5 0 Average Forward Current (A) 25 100 50 125 Mounted on Al PCB, TM = 125 °C Mounted on Recommended Copper Pad Area (RθJA = 80 °C/W) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 Average Forward Current (A) 06 1 0 Average Power Loss (W) 47 59 D = tp/T t p T D = 0.8 8321
Document Number: 89315 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P20 Vishay General Semiconductor New Product Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance TA = 150 °C TA = 125 °C TA = 25 °C Instantaneous Forward Voltage (V) 100 0.1 01 . 6 Instantaneous Forward Current (A) 0.2 1.2 0.8 TA = 100 °C 0.8 1.00.4 1.4 Percent of Rated Peak Reverse Voltage (%) 100 0.001 10 40 100 Instantaneous Reverse Current (mA) 30 60 9070 0.1 0.01 TA = 150 °C TA = 125 °C TA = 25 °C TA = 100 °C 1000 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p Reverse Voltage (V) 0.1 100 11 0 100 t - Pulse Duration (s) 100 0.01 10 100 Transient Thermal Impedance (°C/W) 0.1 1 Junction to Ambient
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 89315 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8P20 Vishay General Semiconductor New Product PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Conform to JEDEC TO-277A TO-277A (SMPC) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) NOM. 0.084 (2.13) NOM. 0.155 (3.94) NOM. Mounting Pad Layout 0.268 (6.80) 0.186 (4.72) MIN. 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. 0.189 (4.80) MIN. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) K
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