V80170PW-M3 VISHAY | Alldatasheet
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www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 1 Document Number: 89946 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 40 A VRRM 170 V IFSM 280 A VF at IF = 40 A 0.68 V TJ max. 175 °C Package TO-3PW Diode variation Dual common cathode TO-3PW TMBS® PIN 2 CASE PIN 1 PIN 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V80170PW UNIT Maximum repetitive peak reverse voltage V RRM 170 V Maximum average forward rectified current (fig. 1) per device IF(AV) A per diode 40 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 280 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range T J, TSTG -40 to +175 °C
www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 2 Document Number: 89946 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode I F = 10 A TA = 25 °C VF (1) 0.65 - V IF = 20 A 0.74 - IF = 40 A 0.82 0.91 IF = 10 A TA = 125 °C 0.51 - IF = 20 A 0.59 - IF = 40 A 0.68 0.76 Reverse current per diode VR = 136 V TA = 25 °C IR (2) 3.1 - μA TA = 125 °C 3.8 - mA VR = 170 V TA = 25 °C - 600 μA TA = 125 °C 7.3 80 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V80170PW UNIT Typical thermal resistance per diode R JC 0.7 °C/W per device 0.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BA SE QUANTITY DELIVERY MODE TO-3PW V80170PW-M3/4W 4.5 4W 30/tube Tube 0 25 50 75 100 125 150 175 Average Forward Rectified Current (A) Case Temperature (°C) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0 5 10 15 20 25 30 35 40 45 50 Average Power Loss (W) Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = tp/T T tp
www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 3 Document Number: 89946 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.1 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TA = 150 °C TA = 25 °C TA = 100 °C TA = 125 °C TA = 175 °C 0.0001 0.001 0.01 0.1 100 1000 20 40 60 80 100 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TA = 150 °C TA =1 2 5°C TA = 100 °C TA = 25 °C TA = 175 °C 100 1000 10 000 0.1 1 10 100 Junction Capacitance (pF) Reverse Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.1 0.01 0.1 1 10 100 Transient Thermal Impedance (°C/W) t - Pulse Duration (s) Junction to Case TO-3PW 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.840 (21.34) 0.820 (20.83) 0.170 (4.32) Ø 0.146 (3.71) Ø 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.205 (5.21) 0.565 (14.35) 0.545 (13.84) 0.160 (4.06) 0.140 (3.56) 0.551 (14.00) 0.537 (13.64) 0.077 (1.96) 0.063 (1.60) 0.079 (2.01) 0.065 (1.65) 0.467 (11.86) 0.453 (11.51) 5° Ref. Both Sides R0.155 (R3.94) R0.145 (R3.68) 3° Ref.30° Ref. 10° Typ. Both Sides 3° Ref.3° Ref. 0.050 (1.27) 0.175 (4.45) 0.165 (4.19) 0.030 (0.75) 0.020 (0.50) 0.098 (2.50) 0.083 (2.12)
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