1N4148_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.4, 06-Jul-17 1 Document Number: 81857 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diodes DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 105 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box

FEATURES

  • Silicon epitaxial planar diode
  • Electrically equivalent diodes: 1N4148 - 1N914
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Extreme fast switches Available Models PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4148 1N4148-TAP or 1N4148TR V4148 Si ngle Tape and re el / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V RRM 100 V Reverse voltage V R 75 V Peak forward surge current t p = 1 μs I FSM 2A Repetitive peak forward current I FRM 500 mA Forward continuous current I F 300 mA Average forward current V R = 0 I F(AV) 150 mA Power dissipation l = 4 mm, TL = 45 °C P tot 440 mW l = 4 mm, TL ≤ 25 °C P tot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T L = constant R thJA 350 K/W Junction temperature T j 175 °C Storage temperature range T stg -65 to +150 °C

www.vishay.com Vishay Semiconductors Rev. 1.4, 06-Jul-17 2 Document Number: 81857 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Fig. 3 - Reverse Current vs. Reverse Voltage ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 10 mA V F 1V Reverse current VR = 20 V I R 25 nA VR = 20 V, Tj = 150 °C I R 50 μA VR = 75 V I R 5μ A Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) 100 V Diode capacitance VR = 0 V, f = 1 MHz, VHF = 50 mV CD 4p F Rectification efficiency V HF = 2 V, f = 100 MHz ηr 45 % Reverse recovery time IF = IR = 10 mA, iR = 1 mA trr 8n s IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω trr 4n s 0.2 0.4 0.6 0.8 1.2 V- Forward Voltage (V) F T j - Junction Temperature (°C)94 9169

1.0 I F = 100 mA

0.1 mA - 30 30 60 90 120 0 0 0.4 0.8 1.2 1.6 0.1 100

1000 IF - Forward Current (mA)

VF - Forward Voltage (V) 2.0 94 9170 Scattering Limit TJ = 25 °C 1N4148 100

1000 IR- Reverse Current (nA)

VR- Reverse Voltage (V) 10 1 100 94 9098 Tj = 25 °C Scattering Limit

www.vishay.com Vishay Semiconductors Rev. 1.4, 06-Jul-17 3 Document Number: 81857 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode identification 1.75 (0.069) 1.5 (0.059) 0.55 (0.022) max. 21145 Created - Date: 17. March 2008 Document no.: 6.560-5004.12-4 25.4 (1.000) min.

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