V40D45C_V01 VISHAY | Alldatasheet
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www.vishay.com Vishay General Semiconductor Revision: 18-Mar-2019 1 Document Number: 87552 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
- Trench MOS Schottky technology
- Very low profile - typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 45 V IFSM 250 A VF at IF = 20 A (TA = 125 °C) 0.40 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Top View Bottom View Anode 1 Anode 2 K Cathode eSMP® Series SMPD (TO-263AC) K 33DD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40D45C UNIT Device marking code V40D45C Maximum repetitive peak reverse voltage V RRM 45 V Maximum average forward rectified current (fig. 1) per device IF(AV) (1) A per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 A Operating junction temperature range T J (2) -40 to +150 Storage temperature range T STG -55 to +150
www.vishay.com Vishay General Semiconductor Revision: 18-Mar-2019 2 Document Number: 87552 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (3) Free air, without heatsink Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode I F = 5 A TA = 25 °C VF (1) 0.41 - V IF = 10 A 0.44 - IF = 20 A 0.49 0.57 IF = 5 A TA = 125 °C 0.29 - IF = 10 A 0.33 - IF = 20 A 0.4 0.48 Reverse current per diode V R = 45 V TA = 25 °C IR (2) -2 . 5 mATA = 125 °C 19 60 Typical junction capacitance 4.0 V, 1 MHz C J 4500 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40D45C UNIT Typical thermal resistance per device R ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V40D45C-M3/I 0.55 I 2000/reel 13" di ameter plastic tape and reel V40D45CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Average Forward Rectified Current (A) Case Temperature (°C) RthJC = 0.8 ƱC/W RthJA = 45 ƱC/W 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Average Power Loss (W) Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = tp/T T tp
www.vishay.com Vishay General Semiconductor Revision: 18-Mar-2019 3 Document Number: 87552 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas 0.01 0.1 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 150 °C TJ = 25 °C TJ = 100 °C TJ = 125 °C TJ = -40 °C 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 150 °C TJ = 100 °C TJ = 25 °C TJ = -40 °C TJ = 125 °C 100 1000 10 000 0.1 1 10 100 Junction Capacitance (pF) Reverse Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.1 100 0.01 0.1 1 10 100 Transient Thermal Impedance (°C/W) t - Pulse Duration (s) Junction to ambient 123456789 Thermal Resistance (°C/W) Copper Pad Areas (cm2) Epoxy printed circuit board FR4 copper thickness = 70 μm S (cm2)
www.vishay.com Vishay General Semiconductor Revision: 18-Mar-2019 4 Document Number: 87552 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 5() Mounting Pad Layout 0,1 0,1 5() SMPD (TO-263AC) 120 120 WR WR 5()
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