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www.vishay.com Vishay General Semiconductor Revision: 22-Dec-13 1 Document Number: 89180 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

FEATURES

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency con verters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM 250 A EAS at L = 70 mH 250 mJ VF at IF = 20 A 0.67 V TJ max. 150 °C Package TO-3PW Diode variations Dual common cathode TO-3PW TMBS® PIN 2 CASE PIN 1 PIN 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100PGW UNIT Maximum repetitive peak reverse voltage V RRM 100 V Maximum average forward rectified current (fig. 1) per device IF(AV) A per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Non-repetitive avalanche energy at TJ = 25 °C, L = 70 mH per diode E AS 250 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range T J, TSTG -40 to +150 °C

www.vishay.com Vishay General Semiconductor Revision: 22-Dec-13 2 Document Number: 89180 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width d 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I R = 1.0 mA T A = 25 °C V BR 100 (minimum) - V Instantaneous forward voltage per diode IF = 5 A TA = 25 °C VF (1) 0.49 - V IF = 10 A 0.58 - IF = 20 A 0.76 0.85 IF = 5 A TA = 125 °C 0.42 - IF = 10 A 0.54 - IF = 20 A 0.67 0.73 Reverse current per diode VR = 70 V TA = 25 °C IR (2) 16 - μA TA = 125 °C 8.3 - mA VR = 100 V TA = 25 °C 69 1000 μA TA = 125 °C 21 47 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100PGW UNIT Typical thermal resistance per diode RTJC 2.0 °C/W per device 1.4 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V40100PGW-M3/4W 4.5 4W 30/tube Tube 0 25 50 75 100 125 150 175 Case Temperature (°C) Average Forward Current (A) 0 4 12 16 20 24 Average Forward Current (A) Average Power Loss (W) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = tp/T t p T

www.vishay.com Vishay General Semiconductor Revision: 22-Dec-13 3 Document Number: 89180 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 0.1 TA = 150 °C TA = 125 °C TA = 25 °C Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 0.1 0.3 0.5 0.7 1000 20 30 40 50 60 70 80 90 100 0.1 0.01 0.001 Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (mA) 100 TA = 150 °C TA = 125 °C TA = 25 °C 10 000 1000 100 0.1 1 10 100 Reverse Voltage (V) Junction Capacitance (p TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction to Case 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) TO-3PW 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.840 (21.34) 0.820 (20.83) 0.170 (4.32) Ø 0.146 (3.71) Ø 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.205 (5.21) 0.565 (14.35) 0.545 (13.84) 0.160 (4.06) 0.140 (3.56) 0.551 (14.00) 0.537 (13.64) 0.077 (1.96) 0.063 (1.60) 0.079 (2.01) 0.065 (1.65) 0.467 (11.86) 0.453 (11.51) 5° Ref. Both Sides R0.155 (R3.94) R0.145 (R3.68) 3° Ref.30° Ref. 10° Typ. Both Sides 3° Ref.3° Ref. 0.050 (1.27) 0.175 (4.45) 0.165 (4.19) 0.030 (0.75) 0.020 (0.50) 0.098 (2.50) 0.083 (2.12)

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