V40100G-E3_V01 VISHAY | Alldatasheet

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V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Revision: 19-Jun-2018 1 Document Number: 88970 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A DESIGN SUPPORT TOOLS

FEATURES

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Low thermal resistance
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diod es, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICALDATA Case: TO-220AB, ITO-220AB, D 2PAK (TO-263AB) and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM 200 A VF at IF = 20 A 0.67 V TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode TO-220AB K 2 3 D2PAK (TO-263AB) K TO-262AA PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 K HEATSINK PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 CASEPIN 3 V40100G VF40100G VI40100GVB40100G TMBS ITO-220AB 1 2 3 click logo to get started Available Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Maximum repetitive peak reverse voltage V RRM 100 V Maximum average forward rectified current (fig. 1) per device IF(AV)

40 Aper diode 20

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH per diode E AS 230 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C  per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V AC 1500 V Operating junction and storage temperature range T J, TSTG -40 to +150 °C

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Revision: 19-Jun-2018 2 Document Number: 88970 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I R = 1.0 mA T A = 25 °C V BR 100 min. - V Instantaneous forward voltage  per diode (1) IF = 5 A TA = 25 °C VF 0.49 - IF = 10 A 0.59 - IF = 20 A 0.75 0.81 IF = 5 A TA = 125 °C 0.42 - IF = 10 A 0.54 - IF = 20 A 0.67 0.73 Reverse current per diode (2) VR = 70 V TA = 25 °C IR 12 - μA TA = 125 °C 8 - mA VR = 100 V TA = 25 °C 55 500 μA TA = 125 °C 21 35 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Typical thermal resistance per diode R ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PA CKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40100G-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF40100G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB40100G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40100G-E3/8W 1.39 8 W 800/reel Tape and reel TO-262AA VI40100G-E3/4W 1.46 4W 50/tube Tube 0 25 50 75 100 125 150 175 Average For ward Re ctified C urrent (A) Case Temperature (°C) Resistive or Inductive Load VF40100G VB(I)40100G 0 5 10 15 20 25 D = 0.1 D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = 0.2 Average Po wer Loss (W) Average Forward Current (A) D = tp/T t p T

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Revision: 19-Jun-2018 3 Document Number: 88970 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance Fig. 7 - Typical Transient Thermal Impedance 100 10 0.2 0.4 0.6 0.8 0.1 Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) TA = 150 °C TA = 125 °C TA = 25 °C 10 20 30 40 50 60 70 80 90 100 100 0.1 0.01 0.001 TA = 150 °C TA = 125 °C TA = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (mA) 10 000 1000 100 0.1 1 10 100 Reverse Voltage (V) Junction Capaci tance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.1 0.1 1 10 1000.01 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) Junction to Case V(B,I)40100G 0.1 1 10 1000.01 t - Pulse Duration (s) Junction to Case VF40100G Transient Thermal Impedance (°C/W)

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Revision: 19-Jun-2018 4 Document Number: 88970 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.113 (2.87) 0.103 (2.62) 0.415 (10.54) 0.380 (9.65) 0.635 (16.13) 0.625 (15.87)PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.161 (4.08) 0.139 (3.53) 1 32 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55)

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Revision: 19-Jun-2018 5 Document Number: 88970 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-262AA 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 123 0.055 (1.40) 0.470 (11.94) PIN 0.411 (10.45) 0.380 (9.65) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) D2PAK (TO-263AB) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.

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