V3P22 VISHAY | Alldatasheet

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www.vishay.com Vishay General Semiconductor Revision: 03-Jun-2019 1 Document Number: 87471 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier DESIGN SUPPORT TOOLS AVAILABLE

FEATURES

  • Low profile package
  • Trench MOS Schottky technology
  • Low power losses, high efficiency
  • Low forward voltage drop
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converte rs, and polarity protection applications. MECHANICAL DATA Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end Notes (1) Mounted on 10 mm x 10 mm PCB pad area (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 200 V IFSM 60 A VF at IF = 3.0 A 0.70 V TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single SMP (DO-220AA) eSMP ® Series Cathode Anode 33DD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V3P22 UNIT Device marking code V3D Maximum repetitive peak reverse voltage V RRM 200 V Maximum DC forward current IF(AV) (1) 3A IF(AV) (2) 1.7 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 60 A Operating junction and storage temperature range T J (3) -40 to +175 °C Operating junction and storage temperature range T STG -55 to +175 °C

www.vishay.com Vishay General Semiconductor Revision: 03-Jun-2019 2 Document Number: 87471 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient (3) Mounted on 10 mm x 10 mm aluminum PCB; thermal resistance RJM - junction-to-mount Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage I F = 1.5 A TA = 25 °C VF (1) 0.78 - V IF = 3 A 0.85 0.94 IF = 1.5 A TA = 125 °C 0.62 - IF = 3 A 0.70 0.78 Reverse current VR = 160 V TA = 25 °C IR (2) 0.001 - mA TA = 125 °C 0.3 - VR = 200 V TA = 25 °C - 0.05 mA TA = 125 °C 0.7 3.0 Typical junction capacitance 4.0 V, 1 MHz C J 120 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL V3P22 UNIT Typical thermal resistance RJA (1)(2) 125 °C/W RJM (3) 15 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V3P22-M3/H 0.024 H 3000 7" diamet er plastic tape and reel V3P22-M3/I 0.024 I 10 000 13" diameter plastic tape and reel V3P22HM3/H (1) 0.024 H 3000 7" diameter plastic tape and reel V3P22HM3/I (1) 0.024 I 10 000 13" diameter plastic tape and reel

www.vishay.com Vishay General Semiconductor Revision: 03-Jun-2019 3 Document Number: 87471 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 100 1000 10000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line Average Forward Rectified Current (A) Mount Temperature (°C) TM measured at cathode terminal mount typical values RthJM = 15 °C/W RthJA = 125 °C/W 100 1000 10000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Axis Title 1st line 2nd line 2nd line Average Power Loss (W) Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 1.0 D = tp/T T tp D = 0.8 D = 0.5 100 1000 10000 0.1 Axis Title 2nd line Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 100 °C TJ = 125 °C TJ = 150 °C TJ = -40 °C TJ = 25 °C TJ = 175 °C 100 1000 10000 0.000001 0.00001 0.0001 0.001 0.01 0.1 100 20 40 60 80 100 Axis Title 1st line 2nd line 2nd lineInstantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = -40 °C TJ = 25 °C TJ = 175 °C 100 1000 10000 100 1000 0.1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line Junction Capacitance (pF) Reverse Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 100 1000 10000 100 1000 0.01 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line Transient Thermal Impedance (°C/W) t - Pulse Duration (s) Junction to ambient

www.vishay.com Vishay General Semiconductor Revision: 03-Jun-2019 4 Document Number: 87471 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) Cathode Band 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) REF. 0.100 (2.54) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27)

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